Abstract: A method of making a semiconductor device, includes: providing a first dielectric layer; sequentially forming a first metal layer, a dummy capacitor dielectric layer, and a second metal layer over the first dielectric layer; and using a single mask layer with two patterns to simultaneously recess two portions of the second metal layer so as to define a metal thin film of a resistor and a top metal plate of a capacitor.

Abstract: A semiconductor device includes: a capacitor that includes a first metal plate; a capacitor dielectric layer disposed over the first metal plate; and a second metal plate disposed over the capacitor dielectric layer; and a resistor that includes a metal thin film, wherein the metal thin film of the resistor and the second metal plate of the capacitor are formed of a same metal material and wherein a top surface of the metal thin film is substantially coplanar with a top surface of the second metal plate of the capacitor.