Patents by Inventor Chung-Chun HSU

Chung-Chun HSU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing a semiconductor device including a ternary alloy layer formed by a microwafe anneal process
    Patent number: 10453688
    Abstract: A method of manufacturing a semiconductor device includes forming a first metal layer on a semiconductor substrate and forming a second metal layer on the first metal layer. The second metal layer is formed of a different metal than the first metal layer. Microwave radiation is applied to the semiconductor substrate, first metal layer, and second metal layer to form an alloy including components of the first metal layer, second metal layer, and the semiconductor substrate.
    Type: Grant
    Filed: August 31, 2016
    Date of Patent: October 22, 2019
    Assignees: National Chiao Tung University, Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chao-Hsin Chien, Chi-Wen Liu, Chung-Chun Hsu, Wei-Chun Chi
  • METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
    Publication number: 20180061642
    Abstract: A method of manufacturing a semiconductor device includes forming a first metal layer on a semiconductor substrate and forming a second metal layer on the first metal layer. The second metal layer is formed of a different metal than the first metal layer. Microwave radiation is applied to the semiconductor substrate, first metal layer, and second metal layer to form an alloy comprising components of the first metal layer, second metal layer, and the semiconductor substrate.
    Type: Application
    Filed: August 31, 2016
    Publication date: March 1, 2018
    Inventors: Chao-Hsin CHIEN, Chi-Wen LIU, Chung-Chun HSU, Wei-Chun CHI