Patents by Inventor Chung-Daw Young

Chung-Daw Young has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for metal etchback with self aligned etching mask
    Patent number: 6818555
    Abstract: A method for a metal etchback process to form a metal filled semiconductor feature having improved planarity and electrical resistance including a semiconductor wafer having an etched opening lined with a refractory metal containing layer and a blanket deposited metal layer filling the etched opening; spin coating a spin on layer selected from the group consisting of an organic resinous layer and a spin-on glass layer over the metal layer; dry etching in a first etchback process to remove a first portion of the SOL layer to reveal a portion of the metal layer leaving a second portion of the SOL layer overlying the etched opening; dry etching in a second etchback process to remove the metal layer to reveal a portion of the refractory metal containing layer; and, removing the second portion of the SOL layer to form a substantially planar metal filled etched opening.
    Type: Grant
    Filed: October 7, 2002
    Date of Patent: November 16, 2004
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventors: How-Cheng Tsai, Hung-Hsin Liu, Chung-Daw Young, Ming-Kuo Yu
  • Method for metal etchback with self aligned etching mask
    Publication number: 20040067633
    Abstract: A method for a metal etchback process to form a metal filled semiconductor feature having improved planarity and electrical resistance including a semiconductor wafer having an etched opening lined with a refractory metal containing layer and a blanket deposited metal layer filling the etched opening; spin coating a spin on layer selected from the group consisting of an organic resinous layer and a spin-on glass layer over the metal layer; dry etching in a first etchback process to remove a first portion of the SOL layer to reveal a portion of the metal layer leaving a second portion of the SOL layer overlying the etched opening; dry etching in a second etchback process to remove the metal layer to reveal a portion of the refractory metal containing layer; and, removing the second portion of the SOL layer to form a substantially planar metal filled etched opening.
    Type: Application
    Filed: October 7, 2002
    Publication date: April 8, 2004
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: How-Cheng Tsai, Hung-Hsin Liu, Chung-Daw Young, Ming-Kuo Yu