Patents by Inventor Chung-Fan Huang

Chung-Fan Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Fin-type field effect transistor structure and manufacturing method thereof
    Patent number: 9899526
    Abstract: A fin-type field effect transistor comprising a substrate, fins, insulators, at least one gate stack and strained material portions is described. The insulators are disposed in trenches of the substrate and between the fins. The upper portion of the fin is higher than a top surface of the insulator and the upper portion has a substantially vertical profile, while the lower portion of the fin is lower than the top surface of the insulator and the lower portion has a tapered profile. The at least one gate stack is disposed over the fins and on the insulators. The strained material portions are disposed on two opposite sides of the at least one gate stack.
    Type: Grant
    Filed: January 15, 2016
    Date of Patent: February 20, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yi-Wei Chiu, Li-Te Hsu, Chung-Fan Huang, Chih-Hsiang Chu
  • FIN-TYPE FIELD EFFECT TRANSISTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
    Publication number: 20170207338
    Abstract: A fin-type field effect transistor comprising a substrate, fins, insulators, at least one gate stack and strained material portions is described. The insulators are disposed in trenches of the substrate and between the fins. The upper portion of the fin is higher than a top surface of the insulator and the upper portion has a substantially vertical profile, while the lower portion of the fin is lower than the top surface of the insulator and the lower portion has a tapered profile. The at least one gate stack is disposed over the fins and on the insulators. The strained material portions are disposed on two opposite sides of the at least one gate stack.
    Type: Application
    Filed: January 15, 2016
    Publication date: July 20, 2017
    Inventors: Yi-Wei Chiu, Li-Te Hsu, Chung-Fan Huang, Chih-Hsiang Chu