Abstract: Various embodiments of the present disclosure are directed towards an integrated chip (IC) comprising a lower gate electrode disposed in a dielectric structure. A first ferroelectric structure overlies the lower gate electrode. A first floating electrode structure overlies the first ferroelectric structure. A channel structure overlies the first floating electrode structure. A second floating electrode structure overlies the channel structure. A second ferroelectric structure overlies the second floating electrode structure. An upper gate electrode overlies the second ferroelectric structure.

Abstract: A memory device including a static random-access memory that includes two cross-coupled inverters and an access transistor having a gate connected to a word line. The memory device further includes one or more logic gates electrically coupled to the static random-access memory, and a non-volatile memory electrically coupled to the static random-access memory and configured to store data and be read using the static random-access memory, wherein the non-volatile memory is connected on one side to the access transistor and on another side to the two cross-coupled inverters.

Abstract: A device includes a substrate, a first semiconductor channel over the substrate, and a second semiconductor channel over the substrate and laterally separated from the first semiconductor channel. A gate structure covers and wraps around the first semiconductor channel and the second semiconductor channel. A first source/drain region abuts the first semiconductor channel on a first side of the gate structure, and a second source/drain region abuts the second semiconductor channel on the first side of the gate structure. An isolation structure is under and between the first source/drain region and the second source/drain region, and includes a first isolation region in contact with bottom surfaces of the first and second source/drain regions, and a second isolation region in contact with sidewalls of the first and second source/drain regions, and extending from a bottom surface of the first isolation region to upper surfaces of the first and second source/drain regions.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip (IC) comprising a lower gate electrode disposed in a dielectric structure. A first ferroelectric structure overlies the lower gate electrode. A first floating electrode structure overlies the first ferroelectric structure. A channel structure overlies the first floating electrode structure. A second floating electrode structure overlies the channel structure. A second ferroelectric structure overlies the second floating electrode structure. An upper gate electrode overlies the second ferroelectric structure.

Abstract: A method for manufacturing a semiconductor feature includes: alternatingly forming first and second dielectric layers on a semiconductor substrate along a vertical direction; forming multiple spaced-apart trenches penetrating the first and second dielectric layers; forming multiple support segments filling the trenches; removing the second dielectric layers to form multiple spaces; forming multiple conductive layers filling the spaces; removing the support segments to expose the conductive layers and the first dielectric layers; selectively forming a blocking layer covering the first dielectric layers outside of the conductive layers; forming multiple selectively-deposited sub-layers on the exposed conductive layers outside of the blocking layer and each connected to one of the conductive layers; forming multiple channel sub-layers on the selectively-deposited sub-layers outside of the blocking layer; removing the blocking layer; forming multiple isolation sub-layers filling the trenches; and forming multiple

Abstract: A method for fabricating a semiconductor device includes the steps of first providing a wafer, forming a scribe line on a front side of the wafer, performing a plasma dicing process to dice the wafer along the scribe line without separating the wafer completely, performing a laminating process to form a tape on the front side of the wafer, performing a grinding process on a backside of the wafer, and then performing an expanding process to divide the wafer into chips.

Abstract: A memory device including a static random-access memory that includes two cross-coupled inverters and an access transistor having a gate connected to a word line. The memory device further includes one or more logic gates electrically coupled to the static random-access memory, and a non-volatile memory electrically coupled to the static random-access memory and configured to store data and be read using the static random-access memory, wherein the non-volatile memory is connected on one side to the access transistor and on another side to the two cross-coupled inverters.

Abstract: The present disclosure describes a method of fabricating a semiconductor structure that includes forming a dummy gate structure over a substrate, forming a first spacer on a sidewall of the dummy gate structure and a second spacer on the first spacer, forming a source/drain structure on the substrate, removing the second spacer, forming a dielectric structure over the source/drain structure, replacing the dummy gate structure with a metal gate structure and a capping structure on the metal gate structure, and forming an opening in the dielectric structure. The opening exposes the source/drain structure. The method further includes forming a dummy spacer on a sidewall of the opening, forming a contact structure in the opening, and removing the dummy spacer to form an air gap between the contact structure and the metal gate structure. The contact structure is in contact with the source/drain structure in the opening.

Abstract: Embodiments of the present disclosure relate to forming a nanosheet multi-channel device with an additional spacing layer and a hard mask layer. The additional spacing layer provides a space for an inner spacer above the topmost channel. The hard mask layer functions as an etch stop during metal gate etch back, providing improve gate height control.

Abstract: A method for fabricating a semiconductor device includes the steps of forming a fin-shaped structure on a substrate, forming a first trench and a second trench in the fin-shaped structure, forming a first dielectric layer in the first trench and the second trench, removing part of the first dielectric layer, forming a second dielectric layer in the first trench and the second trench to form a first single diffusion break (SDB) structure and a second SDB structure, and then forming a gate structure on the fin-shaped structure, the first SDB structure, and the second SDB structure.

Abstract: A semiconductor device includes a substrate having a bonding area and a pad area, a first inter-metal dielectric (IMD) layer on the substrate, a metal interconnection in the first IMD layer, a first pad on the bonding area and connected to the metal interconnection, and a second pad on the pad area and connected to the metal interconnection. Preferably, the first pad includes a first portion connecting the metal interconnection and a second portion on the first portion, and the second pad includes a third portion connecting the metal interconnection and a fourth portion on the third portion, in which top surfaces of the second portion and the fourth portion are coplanar.

Abstract: A method for manufacturing a semiconductor feature includes: alternatingly forming first and second dielectric layers on a semiconductor substrate along a vertical direction; forming multiple spaced-apart trenches penetrating the first and second dielectric layers; forming multiple support segments filling the trenches; removing the second dielectric layers to form multiple spaces; forming multiple conductive layers filling the spaces; removing the support segments to expose the conductive layers and the first dielectric layers; selectively forming a blocking layer covering the first dielectric layers outside of the conductive layers; forming multiple selectively-deposited sub-layers on the exposed conductive layers outside of the blocking layer and each connected to one of the conductive layers; forming multiple channel sub-layers on the selectively-deposited sub-layers outside of the blocking layer; removing the blocking layer; forming multiple isolation sub-layers filling the trenches; and forming multiple

Abstract: A method of fabricating a semiconductor device is provided. The method includes providing a die stacking unit that includes a plurality of dies stacked on each other, and a plurality of conductive joints connected between each two adjacent dies. The method includes providing a plurality of dummy micro bumps and dummy pads between the two adjacent dies and between the conductive joints. The dummy micro bumps and the dummy pads are connected to one of the two adjacent dies but not to the other, and the dummy micro bumps are formed on some of the dummy pads but not on all of the dummy pads. The method includes dispensing an underfill material into gaps between the plurality of dies, the conductive joints, the dummy micro bumps, and the dummy pads.

Abstract: A magnetic tunnel junction (MTJ) memory cell and a metallic etch mask portion are formed over a substrate. At least one dielectric etch stop layer is deposited over the metallic etch mask portion, and a via-level dielectric layer is deposited over the at least one dielectric etch stop layer. A via cavity may be etched through the via-level dielectric layer, and a top surface of the at least one dielectric etch stop layer is physically exposed. The via cavity may be vertically extended by removing portions of the at least one dielectric etch stop layer and the metallic etch mask portion. A contact via structure is formed directly on a top surface of the top electrode in the via cavity to provide a low-resistance contact to the top electrode.

Abstract: The present disclosure describes a method of fabricating a semiconductor structure that includes forming a dummy gate structure over a substrate, forming a first spacer on a sidewall of the dummy gate structure and a second spacer on the first spacer, forming a source/drain structure on the substrate, removing the second spacer, forming a dielectric structure over the source/drain structure, replacing the dummy gate structure with a metal gate structure and a capping structure on the metal gate structure, and forming an opening in the dielectric structure. The opening exposes the source/drain structure. The method further includes forming a dummy spacer on a sidewall of the opening, forming a contact structure in the opening, and removing the dummy spacer to form an air gap between the contact structure and the metal gate structure. The contact structure is in contact with the source/drain structure in the opening.

Abstract: A system comprises a source block buffer and a plurality of hardware motion estimation search processing units in communication with the source block buffer. The source block buffer is configured to store at least a portion of a source block of a source frame of a video. The plurality of hardware motion estimation search processing units are configured to perform at least a portion of a motion estimation for the source block at least in part in parallel across a plurality of different reference frames of the video.

Abstract: A disclosed computer-implemented method may include (1) selecting, from a video stream, a reference frame and a current frame, (2) collecting a reference histogram of the reference frame and a current histogram of the current frame, and (3) generating a smoothed reference histogram by applying a smoothing function to at least a portion of the reference histogram. In some examples, the computer-implemented method may also include (1) determining a similarity metric between the smoothed reference histogram and the current histogram and, (2) when the similarity metric is greater than a threshold value, applying weighted prediction during a motion estimation portion of an encoding of the video stream. Various other methods, systems, and computer-readable media are also disclosed.

Abstract: A system that includes a pixel processing stage decoupled from an entropy coding stage is disclosed. The pixel processing results comprise quantized transform coefficients that are divided into component blocks. The component blocks including non-zero data are identified. An optimized version of the pixel processing results for storage in a buffer storage is generated. The optimized version includes an identification of which of the component blocks include non-zero data, and the optimized version includes contents of one or more of the component blocks that include non-zero data, without including contents of one or more of the component blocks that only include zero data. The optimized version of the pixel processing results is provided for storage in the buffer storage. The optimized version of the pixel processing results from the buffer storage is received and processed to generate an unpacked version of the pixel processing results for use in entropy coding.

Abstract: A system comprises a memory storage configured to store at least a portion of a frame of a video and a hardware motion estimation search processing unit configured to perform at least a portion of a motion estimation search for the video for a plurality of different block sizes. The hardware motion estimation search processing unit is configured to perform the motion estimation search using a plurality of source sub-blocks of a first block size to determine a first type of comparison evaluation values for the first block size. A combination of values included in the first type of comparison evaluation values is utilized to determine at least one second type of comparison evaluation values for a second block size, wherein the second block size is larger than the first block size.

Abstract: A disclosed computer-implemented method may include (1) selecting, from a video stream, a reference frame and a current frame, (2) collecting a reference histogram of the reference frame and a current histogram of the current frame, and (3) generating a smoothed reference histogram by applying a smoothing function to at least a portion of the reference histogram. In some examples, the computer-implemented method may also include (1) determining a similarity metric between the smoothed reference histogram and the current histogram and, (2) when the similarity metric is greater than a threshold value, applying weighted prediction during a motion estimation portion of an encoding of the video stream. Various other methods, systems, and computer-readable media are also disclosed.