Patents by Inventor Chung-Hao Chu Chu

Chung-Hao Chu Chu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and manufacturing method thereof
    Patent number: 10157916
    Abstract: Provided is a semiconductor device includes a gate stack, a first doped region, a second doped region, a first lightly doped region and a second lightly doped region. The gate stack is disposed on a substrate. The first doped region is located in the substrate at a first side of the gate stack. The second doped region is located in the substrate at a second side of the gate stack. The first lightly doped region is located in the substrate between the gate stack and the first doped region. The second lightly doped region is located in the substrate between the gate stack and the second doped region. A property of the first lightly doped region is different from a property of the second lightly doped region.
    Type: Grant
    Filed: April 10, 2017
    Date of Patent: December 18, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Victor Chiang Liang, Chi-Feng Huang, Chia-Chung Chen, Chun-Pei Wu, Fu-Huan Tsai, Chung-Hao Chu Chu, Chin-Nan Chang, Ching-Yu Yang, Ankush Chaudhary
  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20180294261
    Abstract: Provided is a semiconductor device includes a gate stack, a first doped region, a second doped region, a first lightly doped region and a second lightly doped region. The gate stack is disposed on a substrate. The first doped region is located in the substrate at a first side of the gate stack. The second doped region is located in the substrate at a second side of the gate stack. The first lightly doped region is located in the substrate between the gate stack and the first doped region. The second lightly doped region is located in the substrate between the gate stack and the second doped region. A property of the first lightly doped region is different from a property of the second lightly doped region.
    Type: Application
    Filed: April 10, 2017
    Publication date: October 11, 2018
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Victor Chiang Liang, Chi-Feng Huang, Chia-Chung Chen, Chun-Pei Wu, Fu-Huan Tsai, Chung-Hao Chu Chu, Chin-Nan Chang, Ching-Yu Yang, Ankush Chaudhary