Patents by Inventor Chung-Hao Fu

Chung-Hao Fu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12255093
    Abstract: The present disclosure provides a 3D memory structure such as 3D Flash memory structure applying for 3D AND flash memory and a method of forming the same. An etching stop layer is formed on a substrate including active elements. A stacked layer is formed on the etching stop layer. The stacked layer includes insulation layers and sacrificed layers stacked alternatively on the etching stop layer. A patterning process is performed on the stacked layer to form a first stacked structure above the active elements, a second stacked structure surrounding the first stacked structure, and a trench pattern separating the first stacked structure and the second stacked structure and exposing the etching stop layer. The trench pattern includes asymmetric inner sidewalls and outer sidewalls. The inner sidewalls define sidewalls of the first stacked structure. The outer sidewalls define sidewalls of the second stacked structure that face the first stacked structure.
    Type: Grant
    Filed: May 12, 2022
    Date of Patent: March 18, 2025
    Assignee: MACRONIX International Co., Ltd.
    Inventors: Kuan-Yuan Shen, Chung-Hao Fu, Chia-Jung Chiu
  • Publication number: 20230369100
    Abstract: The present disclosure provides a 3D memory structure such as 3D Flash memory structure applying for 3D AND flash memory and a method of forming the same. An etching stop layer is formed on a substrate including active elements. A stacked layer is formed on the etching stop layer. The stacked layer includes insulation layers and sacrificed layers stacked alternatively on the etching stop layer. A patterning process is performed on the stacked layer to form a first stacked structure above the active elements, a second stacked structure surrounding the first stacked structure, and a trench pattern separating the first stacked structure and the second stacked structure and exposing the etching stop layer. The trench pattern includes asymmetric inner sidewalls and outer sidewalls. The inner sidewalls define sidewalls of the first stacked structure. The outer sidewalls define sidewalls of the second stacked structure that face the first stacked structure.
    Type: Application
    Filed: May 12, 2022
    Publication date: November 16, 2023
    Applicant: MACRONIX International Co., Ltd.
    Inventors: Kuan-Yuan Shen, Chung-Hao Fu, Chia-Jung Chiu