Abstract: A method for processing an integrated circuit includes forming first and second gate all around transistors. The method forms a dipole oxide in the first gate all around transistor without forming the dipole oxide in the second gate all around transistor. This is accomplished by entirely removing an interfacial dielectric layer and a dipole-inducing layer from semiconductor nanosheets of the second gate all around transistor before redepositing the interfacial dielectric layer on the semiconductor nanosheets of the second gate all around transistor.

Abstract: A semiconductor device structure is provided. The device includes one or more first semiconductor layers, each first semiconductor layer of the one or more first semiconductor layers is surrounded by a first intermixed layer, wherein the first intermixed layer comprises a first material and a second material.

Abstract: The present disclosure provides a connecting device and a lamp system. The connecting device is used to connect multiple lamps to form the lamp system. The connecting device includes a connecting element, a cover, and a shell. The cover is mounted on the connecting element and includes at least two first assembling members. The shell is detachably mounted on the cover. The shell includes a side wall, an opening, multiple gateways, and at least two second assembling members. The side wall surrounds a space. The opening and the gateways all are formed on a top of the side wall and communicate with the space. A portion of each of the lamps is received in one of the gateways. The second assembling members are disposed on the side wall and face each other in a radial line of the shell, and respectively engage with the first assembling members.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first dielectric feature extending along a first direction, the first dielectric feature comprising a first dielectric layer having a first sidewall and a second sidewall opposing the first sidewall, a first semiconductor layer disposed adjacent the first sidewall, the first semiconductor layer extending along a second direction perpendicular to the first direction, a second dielectric feature extending along the first direction, the second dielectric feature disposed adjacent the first semiconductor layer, and a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, and a portion of the first gate electrode layer is exposed to a first air gap.

Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a plurality of first nanostructures formed over a substrate, and a dielectric wall adjacent to the first nanostructures. The semiconductor structure also includes a first liner layer between the first nanostructures and the dielectric wall, and the first liner layer is in direct contact with the dielectric wall. The semiconductor structure also includes a gate structure surrounding the first nanostructures, and the first liner layer is in direct contact with a portion of the gate structure.

Abstract: A semiconductor device according to the present disclosure includes a source feature and a drain feature, a plurality of semiconductor nanostructures extending between the source feature and the drain feature, a gate structure wrapping around each of the plurality of semiconductor nanostructures, a bottom dielectric layer over the gate structure and the drain feature, a backside power rail disposed over the bottom dielectric layer, and a backside source contact disposed between the source feature and the backside power rail. The backside source contact extends through the bottom dielectric layer.

Abstract: An electrode controls transmittance of a blocking layer over a photodiode of a pixel sensor (e.g., a photodiode of a small pixel detector) by changing oxidation of a metal material included in the blocking layer. By using the electrode to adjust transmittance of the blocking layer, pixel sensors for different uses and/or products may be produced using a single manufacturing process. As a result, power and processing resources are conserved that otherwise would have been expended in switching manufacturing processes. Additionally, production time is decreased (e.g., by eliminating downtime that would otherwise have been used to reconfigure fabrication machines.

Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes a first channel structure configured to transport charge carriers within a first transistor device and a first gate electrode layer wrapping around the first channel structure. A second channel structure is configured to transport charge carriers within a second transistor device. A second gate electrode layer wraps around the second channel structure. The second gate electrode layer continuously extends from around the second channel structure to cover the first gate electrode layer. A third channel structure is configured to transport charge carriers within a third transistor device. A third gate electrode layer wraps around the third channel structure. The third gate electrode layer continuously extends from around the third channel structure to cover the second gate electrode layer.

Abstract: Provided are a transistor structure and a method of forming the same. The transistor structure includes a gate electrode; a gate dielectric layer, disposed on the gate electrode; an active layer, disposed on the gate dielectric layer; a pair of source/drain (S/D) features, disposed on the active layer; and an isolation structure, laterally surrounding the pair of S/D features, wherein the isolation structure at least comprises a blocking layer and an upper dielectric layer on the blocking layer.

Abstract: Semiconductor package includes a pair of dies, a redistribution structure, and a conductive plate. Dies of the pair of dies are disposed side by side. Each die includes a contact pad. Redistribution structure is disposed on the pair of dies, and electrically connects the pair of dies. Redistribution structure includes an innermost dielectric layer, an outermost dielectric layer, and a redistribution conductive layer. Innermost dielectric layer is closer to the pair of dies. Redistribution conductive layer extends between the innermost dielectric layer and the outermost dielectric layer. Outermost dielectric layer is furthest from the pair of dies. Conductive plate is electrically connected to the contact pads of the pair of dies. Conductive plate extends over the outermost dielectric layer of the redistribution structure and over the pair of dies. Vertical projection of the conductive plate falls on spans of the dies of the pair of dies.

Abstract: A conductive mechanism includes two bases, an inner conductive spring and an outer conductive spring. The two bases are opposite to each other. Each of the bases includes a surface and a partition wall protruding relative to the surface. The inner conductive spring is disposed at inner sides of the two partition walls of the two bases. The outer conductive spring is disposed at outer sides of the two partition walls of the two bases. At least one of two ends of each of the inner conductive spring and the outer conductive spring rotatably abuts against the surface of one of the bases.

Abstract: The present disclosure provides a connecting device and a lamp system. The connecting device is used to connect multiple lamps to form the lamp system. The connecting device includes a connecting element, a cover, and a shell. The cover is mounted on the connecting element and includes at least two first assembling members. The shell is detachably mounted on the cover. The shell includes a side wall, an opening, multiple gateways, and at least two second assembling members. The side wall surrounds a space. The opening and the gateways all are formed on a top of the side wall and communicate with the space. A portion of each of the lamps is received in one of the gateways. The second assembling members are disposed on the side wall and face each other in a radial line of the shell, and respectively engage with the first assembling members.

Abstract: A device includes a semiconductor fin, and a gate stack on sidewalls and a top surface of the semiconductor fin. The gate stack includes a high-k dielectric layer, a work-function layer overlapping a bottom portion of the high-k dielectric layer, and a blocking layer overlapping a second bottom portion of the work-function layer. A low-resistance metal layer overlaps and contacts the work-function layer and the blocking layer. The low-resistance metal layer has a resistivity value lower than second resistivity values of both of the work-function layer and the blocking layer. A gate spacer contacts a sidewall of the gate stack.

Abstract: The present invention relates to the use of a Raman spectral signature of nitrate, as a biomarker for an early, real-time diagnosis of nitrogen status in growing plants in a non-invasive or non-destructive way in order to detect nitrogen deficiency before the onset of any visible symptoms. The early, real-time diagnosis of nitrogen deficiency in plants makes it possible to correct nitrogen deficiency for the avoidance of negative effects on the yield and biomass of growing plants or leafy vegetables.

Abstract: Described herein are modular server systems. The server systems include a server chassis having one or more window bays each having the same dimensions. The system also includes a plurality of device trays each for holding a device that is selected from a plurality of different devices. Each device tray fits in the one or more window bays.

Abstract: A mobile electronic device includes a ground plane, a first slot, a plurality of first inductive elements, a first antenna, a second antenna, a first signal source, and a second signal source. The first slot is disposed in the ground plane to form a first ground portion and a second ground portion separated from each other. The first inductive elements are respectively connected to the first ground portion and the second ground portion. The first antenna and the second antenna respectively receive a radio-frequency signal in a predetermined band. The first signal source is electrically connected between the first antenna and the first ground portion and receives the radio-frequency signal from the first antenna. The second signal source is electrically connected between the second antenna and the second ground portion and receives the radio-frequency signal from the second antenna.

Abstract: A simulate segmentation method of cylinder and pie cake digital models utilizes a three-dimensional model and a reference point to cope with various shapes of the nuclear reactor structures. The segmentation simulation of the nuclear reactor structure is conducted with genetic algorithm. The segmentation simulation of the nuclear reactor structure is achieved by using the genetic algorithm to perform a double selection mechanism on the cross-sectional area of the nuclear reactor structure to select the optimal configuration of the segmentation, thus minimizing the cross-sectional areas of the nuclear reactor structure. The cutter segments the nuclear reactor structure based on the optimal configuration of the segmentation, thereby achieving the purpose of minimizing the attrition rate of a cutter and segmenting the nuclear reactor structure.

Abstract: The present disclosure illustrates a map creation system and a method for a movable robot. The map creation system includes a movable robot and a display device. The movable robot includes a robot body; a driving unit driving the robot body to move in a space; an image capturing unit capturing a image in the space; a sampling unit sampling in the space to obtain a sample; a control unit controlling the operation of the driving unit, the image capturing unit and the sampling unit; and a power supply unit supplying an electrical power to each unit. The display device displays the received image and marks a location in the space where the sample is obtained on the image, and synchronously displays a movement trace of the movable robot in the space according to the driving instructions of the driving unit.

Abstract: A simulate segmentation method of cylinder and pie cake digital models utilizes a three-dimensional model and a reference point to cope with various shapes of the nuclear reactor structures. The segmentation simulation of the nuclear reactor structure is conducted with genetic algorithm. The segmentation simulation of the nuclear reactor structure is achieved by using the genetic algorithm to perform a double selection mechanism on the cross-sectional area of the nuclear reactor structure to select the optimal configuration of the segmentation, thus minimizing the cross-sectional areas of the nuclear reactor structure. The cutter segments the nuclear reactor structure based on the optimal configuration of the segmentation, thereby achieving the purpose of minimizing the attrition rate of a cutter and segmenting the nuclear reactor structure.

Abstract: A packaging methodology for radioactive dismantled parts of nuclear facilities is provided. This methodology integrates voxelization and metaheuristic to discretize the irregular 3D shape of various dismantled parts and put them into the containers with greatest efficiency. To enumerate the possible locations and orientations of an irregular part effectively, the solid models of the dismantled parts are descripted to user-specified voxelization operations. Therefore, discretized parts and container yield a finite space of optimal solutions and make the evolution algorithm viable for optimization quest. This methodology improves the package efficiency of the radioactive dismantled parts to reduce the required quantity of the storage containers.