Abstract: A semiconductor device is provided, which includes an active region, a first semiconductor layer, a first metal element-containing structure, a first p-type or n-type layer, a second semiconductor layer and an insulating layer. The active region has a first surface and a second surface. The first semiconductor layer is at the first surface. The first metal element-containing structure covers the first semiconductor layer and comprising a first metal element. The first p-type or n-type layer is between the first semiconductor layer and the first metal element-containing structure. The second semiconductor layer is between the first semiconductor layer and the first p-type or n-type layer. The insulating layer covers a portion of the first semiconductor layer and a portion of the second semiconductor. The first p-type or n-type layer includes an oxygen element (O) and a second metal element and has a thickness less than or equal to 20 nm.

Abstract: A light-emitting device comprises a first semiconductor layer; a semiconductor mesa, comprising an active layer and a second semiconductor layer and comprising an inclined surface connected to the first semiconductor layer; a contact electrode covering the second semiconductor layer and comprising an upper surface; a reflective structure comprising a reflective structure opening having a first side surface and a second side surface; a connection layer covering the reflective structure; and a metal reflective layer covering the connection layer; wherein in a cross-sectional view of the light-emitting device, a first portion of a projection of the first side surface to the upper surface of the contact electrode comprises a first length, a second portion of a projection of the second side surface to the upper surface of the contact electrode comprises a second length, and the first length is smaller than the second length.

Abstract: An optoelectronic semiconductor device includes a substrate, a first type semiconductor structure located on the substrate, a second type semiconductor structure located on the first type semiconductor structure, an active structure located between the first type semiconductor structure and the second type semiconductor structure, a plurality of contact portions disposed between the first type semiconductor structure and the substrate, and a first conductive oxide layer, a second conductive oxide layer, a first insulating layer and a second insulating layer. The plurality of contact portions is separated from each other, and one of them includes a semiconductor and has a side wall. The first conductive oxide layer contacts the contact portion, and the second conductive oxide layer contacts the first conductive oxide layer. The first insulating layer contacts the side wall. The second insulating layer is disposed between the first insulating layer and the second conductive oxide layer.

Abstract: A semiconductor device is provided, which includes a semiconductor stack and a first contact structure. The semiconductor stack includes an active layer and has a first surface and a second surface. The first contact structure is located on the first surface and includes a first semiconductor layer, a first metal element-containing structure and a first p-type or n-type layer. The first metal element-containing structure includes a first metal element. The first p-type or n-type layer physically contacts the first semiconductor layer and the first metal element-containing structure. The first p-type or n-type layer includes an oxygen element (O) and a second metal element and has a thickness less than or equal to 20 nm, and the first semiconductor layer includes a phosphide compound or an arsenide compound.

Abstract: An optoelectronic semiconductor device includes a substrate, a first type semiconductor structure, a second type semiconductor structure, an active structure and a contact structure. The first type semiconductor structure is located on the substrate and has a first protrusion part with a first thickness and a platform part with a second thickness. The second type semiconductor structure is located on the first type semiconductor structure. The active structure is between the first type semiconductor structure and the second type semiconductor structure. The contact structure is disposed between the first type semiconductor structure and the substrate. The second thickness of the platform part is in a range of 0.01 ?m to 1 ?m.

Abstract: A composition of a drug carrier, a pharmaceutical composition thereof, a preparation method and a use method thereof are provided. The composition of a drug carrier includes a first mixture and a second mixture. The first mixture includes a hydrophilic polymer, tricalcium phosphate and a water-soluble dispersant. The second mixture includes a water-absorbing material and a divalent cation salt. The pharmaceutical composition includes the composition of a drug carrier above and a drug for preparing an anti-inflammatory or antibiotic medicine. The preparation method of the composition of a drug carrier includes mixing the first mixture and the second mixture. The use method of the composition of a drug carrier includes mixing the first mixture with a drug and then adding the second mixture. Accordingly, topically applying the pharmaceutical composition on a surgical site may effectively release the drug thereon.

Abstract: An optoelectronic semiconductor device includes a substrate, a first type semiconductor structure, a second type semiconductor structure, an active structure and a contact structure. The first type semiconductor structure is located on the substrate and has a first protrusion part with a first thickness and a platform part with a second thickness. The second type semiconductor structure is located on the first type semiconductor structure. The active structure is between the first type semiconductor structure and the second type semiconductor structure. The contact structure is disposed between the first type semiconductor structure and the substrate. The second thickness of the platform part is in a range of 0.01 ?m to 1 ?m.

Abstract: A semiconductor device is provided, which includes a semiconductor stack and a first contact structure. The semiconductor stack includes an active layer and has a first surface and a second surface. The first contact structure is located on the first surface and includes a first semiconductor layer, a first metal element-containing structure and a first p-type or n-type layer. The first metal element-containing structure includes a first metal element. The first p-type or n-type layer physically contacts the first semiconductor layer and the first metal element-containing structure. The first p-type or n-type layer includes an oxygen element (O) and a second metal element and has a thickness less than or equal to 20 nm, and the first semiconductor layer includes a phosphide compound or an arsenide compound.

Abstract: An optoelectronic semiconductor device includes a semiconductor stack, an electrode, and a plurality of contact portions. The semiconductor stack includes a first type semiconductor structure, an active structure on the first type semiconductor structure, and a second type semiconductor structure on the active structure. The first type semiconductor structure includes a first protrusion part, a second protrusion part and a platform part between the first protrusion part and the second protrusion part. The semiconductor stack includes a thickness. The electrode on the second type semiconductor structure includes a region corresponding to the first protrusion. The contact portions are located at the second protrusion part without being at the first protrusion part. The contact portions are attached to the first type semiconductor structure.

Abstract: A composition of a drug carrier, a pharmaceutical composition thereof, a preparation method and a use method thereof are provided. The composition of a drug carrier includes a first mixture and a second mixture. The first mixture includes a hydrophilic polymer, tricalcium phosphate and a water-soluble dispersant. The second mixture includes a water-absorbing material and a divalent cation salt. The pharmaceutical composition includes the composition of a drug carrier above and a drug for preparing an anti-inflammatory or antibiotic medicine. The preparation method of the composition of a drug carrier includes mixing the first mixture and the second mixture. The use method of the composition of a drug carrier includes mixing the first mixture with a drug and then adding the second mixture. Accordingly, topically applying the pharmaceutical composition on a surgical site may effectively release the drug thereon.

Abstract: An optical plate with protrusions, an optical structure, a backlight module and a display device are provided. The optical plate includes a main body and several protrusions. The main body has a first surface. The protrusions are formed on and projected from the first surface. An area ratio of the protrusions to the first surface is in a range of 0.03˜35%. The protrusions have a pitch in a range of 0.5˜10 mm, and a portion of the first surface other than the protrusions has a first center line mean roughness Ra in a range of 0.01˜0.1 ?m.

Abstract: A hemostatic material, a preparation method thereof, and a pharmaceutical composition containing the same are introduced. The hemostatic material includes 200 to 1600 parts by weight of water-insoluble gelatin and 100 to 1000 parts by weight of hydrating material. The preparation method for the hemostatic material includes the steps of (a) providing 200 to 1600 parts by weight of water-insoluble gelatin and 100 to 1000 parts by weight of hydrating material; and (b) combining the water-insoluble gelatin with the hydrating material to form a hemostatic material. The pharmaceutical composition includes an aforementioned hemostatic material and active pharmaceutical ingredients. Through the aforementioned hemostatic material, hemostatic products can increase the blood absorption capacity.

Abstract: An optoelectronic semiconductor device includes a semiconductor stack, an electrode, and a plurality of contact portions. The semiconductor stack includes a first type semiconductor structure, an active structure on the first type semiconductor structure, and a second type semiconductor structure on the active structure. The first type semiconductor structure includes a first protrusion part, a second protrusion part and a platform part between the first protrusion part and the second protrusion part. The semiconductor stack includes a thickness. The electrode on the second type semiconductor structure includes a region corresponding to the first protrusion. The contact portions are located at the second protrusion part without being at the first protrusion part. The contact portions are attached to the first type semiconductor structure.

Abstract: Nanosilver particles, a porous material composite containing same, and a method of producing same are introduced. The method includes the steps of (a) mixing silver salts-containing precursor and protecting agent to form a first liquid mixture; (b) introducing organic reductant into a first reactant to form a second reactant, wherein the silver salts-containing precursor is reduced by the organic reductant to form nanosilver particles; introducing organic reductant into the first liquid mixture to form a second liquid mixture, wherein the silver salts-containing precursor is reduced by the organic reductant to form nanosilver particles; and (c) introducing alkalinizing agent into the nanosilver particles-containing second liquid mixture. The porous material composite includes a porous material and nanosilver particles attached to outer and inner surfaces of the porous material.

Abstract: A drug carrier, a drug structure, a purpose of the same, a method of making the same, and a method of using the same to inhibit H. pylori are revealed. The drug carrier includes a negatively charged polymer, chitosan and magnetic particles. The purpose of the drug carrier is to make a drug for inhibiting H. pylori. The drug structure includes a negatively charged polymer, chitosan, magnetic particles and an active ingredient. The method of making the drug structure includes mixing the negatively charged polymer solution, the chitosan solution, the magnetic particles and the active ingredient solution to form an initial solution and allowing ingredients in the initial solution to react and thereby form drug structure particles. The method of using the drug structure to inhibit H pylori includes administering the drug structure to an H. pylori colony. The drug carrier and drug structure demonstrate enhanced therapeutic efficacy.

Abstract: A drug carrier carrying an active substance and a method preparing the same are provided. The method includes respectively dissolving a negatively charged polymer, sodium tripolyphosphate, and an active substance in a NaOH aqueous solution to increase the encapsulation rate of the active substance in the drug carrier.

Abstract: A drug carrier, a drug structure, a purpose of the same, a method of making the same, and a method of using the same to inhibit H. pylori are revealed. The drug carrier includes a negatively charged polymer, chitosan and magnetic particles. The purpose of the drug carrier is to make a drug for inhibiting H. pylori. The drug structure includes a negatively charged polymer, chitosan, magnetic particles and an active ingredient. The method of making the drug structure includes mixing the negatively charged polymer solution, the chitosan solution, the magnetic particles and the active ingredient solution to form an initial solution and allowing ingredients in the initial solution to react and thereby form drug structure particles. The method of using the drug structure to inhibit H pylori includes administering the drug structure to an H. pylori colony. The drug carrier and drug structure demonstrate enhanced therapeutic efficacy.

Abstract: An optical plate with protrusions, an optical structure, a backlight module and a display device are provided. The optical plate includes a main body and several protrusions. The main body has a first surface. The protrusions are formed on and projected from the first surface. An area ratio of the protrusions to the first surface is in a range of 0.03˜35%. The protrusions have a pitch in a range of 0.5˜10 mm, and a portion of the first surface other than the protrusions has a first center line mean roughness Ra in a range of 0.01˜0.1 ?m.

Abstract: A hemostatic material, a preparation method thereof, and a pharmaceutical composition containing the same are introduced. The hemostatic material includes 200 to 1600 parts by weight of water-insoluble gelatin and 100 to 1000 parts by weight of hydrating material. The preparation method for the hemostatic material includes the steps of (a) providing 200 to 1600 parts by weight of water-insoluble gelatin and 100 to 1000 parts by weight of hydrating material; and (b) combining the water-insoluble gelatin with the hydrating material to form a hemostatic material. The pharmaceutical composition includes an aforementioned hemostatic material and active pharmaceutical ingredients. Through the aforementioned hemostatic material, hemostatic products can increase the blood absorption capacity.

Abstract: A method for making an optical plate formed with a microstructure includes: extruding a substrate material and advancing the same to pass through a first nip formed between an embossing roller and a first pressing roller, the embossing roller having a micropatterned surface formed with a plurality of protrusions and a plurality of grooves, the protrusions and the grooves cooperatively defining a microstructure-forming space; applying a photosensitive resin to the micropatterned surface and filling the same into the microstructure-forming space upstream of the first nip to form a plurality of microelements respectively in the microstructure-forming space; allowing the photosensitive resin applied to the micropatterned surface to pass through the first nip together with the substrate material, thereby bonding the microelements to the substrate material; and irradiating and curing the photosensitive resin downstream of the first nip to form the optical plate.