Abstract: Provided are FinFET devices and methods of forming the same. A dummy gate having gate spacers on opposing sidewalls thereof is formed over a substrate. A dielectric layer is formed around the dummy gate. An upper portion of the dummy gate is removed and upper portions of the gate spacers are removed, so as to form a first opening in the dielectric layer. A lower portion of the dummy gate is removed to form a second opening below the first opening. A metal layer is formed in the first and second openings. The metal layer is partially removed to form a metal gate.

Abstract: In some embodiments, the present disclosure relates to an integrated circuit (IC) in which a memory structure comprises an inhibition layer inserted between two ferroelectric layers to create a tetragonal-phase dominant ferroelectric structure. In some embodiments, the ferroelectric structure includes a first ferroelectric layer, a second ferroelectric layer overlying the first ferroelectric layer, and a first inhibition layer disposed between the first and second ferroelectric layers and bordering the second ferroelectric layer. The first inhibition layer is a different material than the first and second ferroelectric layers.

Abstract: Examples disclosed herein relate to device. The device includes a substrate, a plurality of adjacent pixel-defining layer (PDL structures disposed over the substrate, and a plurality of sub-pixels. The PDL structure have a top surface coupled to adjacent sidewalls of the PDL structure. The plurality of sub-pixels are defined by the PDL structures. Each sub-pixel includes an anode, an organic light emitting diode (OLED), a cathode, and an encapsulation layer. The organic light emitting diode (OLED) material disposed over the anode. The OLED material extends over the top surface of the PDL structure past the adjacent sidewalls. The cathode is disposed over the OLED material. The cathode extends over the top surface of the PDL structure past the adjacent sidewalls. The encapsulation layer is disposed over the cathode. The encapsulation layer has a first sidewall and a second sidewall.

Abstract: An anti-peep display device includes a display module and an anti-peep module disposed on the display module. The anti-peep module includes the following features. The first light incident surface faces the display surface, the second and third light incident surfaces are located on opposite sides of the first light incident surface, the first condensing portion is disposed corresponding to the second light incident surface and the first light source, the second condensing portion is disposed corresponding to the third light incident surface and the second light source, the first and second condensing portions convert beams of the first and second light sources into anti-peep beams with a beam angle less than 10 degrees, and the optical microstructures reflect the anti-peep beams and exit the anti-peep beams from the light guide plate. The present invention also provides an anti-peep method applicable to the anti-peep display device.

Abstract: A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions, a channel between the first and second S/D regions, a gate engaging the channel, and a contact feature connecting to the first S/D region. The contact feature includes first and second contact layers. The first contact layer has a conformal cross-sectional profile and is in contact with the first S/D region on at least two sides thereof. In embodiments, the first contact layer is in direct contact with three or four sides of the first S/D region so as to increase the contact area. The first contact layer includes one of a semiconductor-metal alloy, an III-V semiconductor, and germanium.

Abstract: A sealing article includes a body and a coating layer disposed on at least one surface of the body. The body comprises a polymeric elastomer such as perfluoroelastomer or fluoroelastomer. The coating layer comprises at least one metal. The sealing article may be a seal, a gasket, an O-ring, a T-ring or any other suitable product. The sealing article is resistant to ultra-violet (UV) light and plasma, and may be used for sealing a semiconductor processing chamber.

Abstract: A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions, a channel between the first and second S/D regions, a gate engaging the channel, and a contact feature connecting to the first S/D region. The contact feature includes first and second contact layers. The first contact layer has a conformal cross-sectional profile and is in contact with the first S/D region on at least two sides thereof. In embodiments, the first contact layer is in direct contact with three or four sides of the first S/D region so as to increase the contact area. The first contact layer includes one of a semiconductor-metal alloy, an III-V semiconductor, and germanium.

Abstract: Provided are a transistor structure and a method of forming the same. The transistor structure includes a gate electrode; a gate dielectric layer, disposed on the gate electrode; an active layer, disposed on the gate dielectric layer; a pair of source/drain (S/D) features, disposed on the active layer; and an isolation structure, laterally surrounding the pair of S/D features, wherein the isolation structure at least comprises a blocking layer and an upper dielectric layer on the blocking layer.

Abstract: A supported metallocene catalyst includes a carrier and a metallocene component. The carrier includes an inorganic oxide particle and an alkyl aluminoxane material. The inorganic oxide particle includes at least one inorganic oxide compound selected from the group consisting of an oxide of Group 3A and an oxide of Group 4A. The alkyl aluminoxane material includes an alkyl aluminoxane compound and an alkyl aluminum compound that is present in amount ranging from greater than 0.01 wt % to less than 14 wt % base on 100 wt % of the alkyl aluminoxane material. The metallocene component is supported on the carrier, and includes one of a metallocene compound containing a metal from Group 3B, a metallocene compound containing a metal from Group 4B, and a combination thereof. A method for preparing the supported metallocene catalyst and a method for preparing polyolefin using the supported metallocene catalyst are also disclosed.

Abstract: A method of making a sealing article that includes a body and a coating layer disposed on at least one surface of the body. The body comprises a polymeric elastomer such as perfluoroelastomer or fluoroelastomer. The coating layer comprises at least one metal. The sealing article may be a seal, a gasket, an O-ring, a T-ring or any other suitable product. The sealing article is resistant to ultra-violet (UV) light and plasma, and may be used for sealing a semiconductor processing chamber.

Abstract: An apparatus for producing silicon carbide crystal is provided and includes a composite structure formed by a plurality of graphite layers and silicon carbide seed crystals, wherein a density or thickness of each layer of graphite is gradually adjusted to reduce a difference of a thermal expansion coefficient and Young's modulus between the graphite layers and silicon carbide. The composite structure can be stabilized on a top portion or an upper cover of a crucible made of graphite, thereby preventing the silicon carbide crystal from falling off.

Abstract: A device includes a semiconductor fin, and a gate stack on sidewalls and a top surface of the semiconductor fin. The gate stack includes a high-k dielectric layer, a work-function layer overlapping a bottom portion of the high-k dielectric layer, and a blocking layer overlapping a second bottom portion of the work-function layer. A low-resistance metal layer overlaps and contacts the work-function layer and the blocking layer. The low-resistance metal layer has a resistivity value lower than second resistivity values of both of the work-function layer and the blocking layer. A gate spacer contacts a sidewall of the gate stack.

Abstract: An anti-peep display device includes a display module and an anti-peep module disposed on the display module. The anti-peep module includes the following features. The first light incident surface faces the display surface, the second and third light incident surfaces are located on opposite sides of the first light incident surface, the first condensing portion is disposed corresponding to the second light incident surface and the first light source, the second condensing portion is disposed corresponding to the third light incident surface and the second light source, the first and second condensing portions convert beams of the first and second light sources into anti-peep beams with a beam angle less than 10 degrees, and the optical microstructures reflect the anti-peep beams and exit the anti-peep beams from the light guide plate. The present invention also provides an anti-peep method applicable to the anti-peep display device.

Abstract: A light source module including a light guide plate, a first light source and a plurality of first optical microstructures is provided. The light guide plate has a first incident surface and a bottom surface connected to the first incident surface. The first light source is disposed on a side of the first incident surface of the light guide plate. The first optical microstructures are disposed on the bottom surface. Each of the first optical microstructures has a first light receiving surface disposed toward the first light source. Each of the first light receiving surfaces of a first portion of the first optical microstructures has a first edge at a junction with the bottom surface, and a perpendicular bisector of the first edge passes through the first light source.

Abstract: A display device, including a display module and a peep-proof light source module, is provided. The display module is used to provide a display beam. The peep-proof light source module is disposed on a transmission path of the display beam and includes at least one light emitting element, a light guide plate, and optical microstructures. The light emitting element is used to provide a privacy light. The light guide plate has at least one light incident surface. Each optical microstructure has an optical surface facing the light incident surface. At least part of the privacy light is reflected by the optical surface and then exits the light guide plate. The distribution density of the optical microstructures on the light guide plate close to the light incident surface is substantially the same as the distribution density away from the light incident surface and close to the center.

Abstract: A display device, including a display module and a peep-proof light source module, is provided. The display module is used to provide a display beam. The peep-proof light source module is disposed on a transmission path of the display beam and includes at least one light emitting element, a light guide plate, and optical microstructures. The light emitting element is used to provide a privacy light. The light guide plate has at least one light incident surface. Each optical microstructure has an optical surface facing the light incident surface. At least part of the privacy light is reflected by the optical surface and then exits the light guide plate. The distribution density of the optical microstructures on the light guide plate close to the light incident surface is substantially the same as the distribution density away from the light incident surface and close to the center.

Abstract: The invention provides a light source module including a light guide plate and light emitting elements. The light guide plate includes a main plate body and a plurality of optical microstructures. The main plate body has a light emitting surface and a back surface opposite to each other, and a light incident surface connected therebetween. The optical microstructures are formed on the back surface. Each optical microstructure includes at least two sections connected to each other, each section having a reflective surface. The light emitting elements are disposed on the light incident surface, and light emitted by each of the light emitting elements is reflected by at least some of the reflective surfaces and transmitted to the light emitting surface. In any optical microstructure, the reflective surfaces are not parallel to each other.

Abstract: A light source module including a light guide plate, a first light source and a plurality of first optical microstructures is provided. The light guide plate has a first incident surface and a bottom surface connected to the first incident surface. The first light source is disposed on a side of the first incident surface of the light guide plate. The first optical microstructures are disposed on the bottom surface. Each of the first optical microstructures has a first light receiving surface disposed toward the first light source. Each of the first light receiving surfaces of a first portion of the first optical microstructures has a first edge at a junction with the bottom surface, and a perpendicular bisector of the first edge passes through the first light source.

Abstract: A display apparatus with multi screens includes a plurality of display screens and a prism structure optical element disposed between two adjacent display screens. The prism structure optical element includes a base and a plurality of prism pillars arranged on the base in a predetermined direction and facing two adjacent display screens. The base includes adjacent a first region and a second region. Lengths of the first region and the second region along the predetermined direction are La and Lb, respectively, wherein La?Lb. The prism pillars include a plurality of first prism pillars arranged in the first region and a plurality of second prism pillars arranged in the second region. Each of the first prism pillars and the second prism pillars respectively has a total reflecting surface and a refracting surface. The total reflecting surface is located between the refracting surface and an adjacent area.

Abstract: A multi-screen display device includes a plurality of display screens and a prism structure optical element disposed between two adjacent display screens. The prism structure optical element includes a substrate and a plurality of prism columns. The substrate includes a first region and a second region adjacent to each other, and the lengths of the first and second regions are respectively La and Lb, and La?Lb. The prism columns include a plurality of first and second prism columns in the first and second regions respectively. Each first prism columns has two interior angles ?a1, ?a2, a first surface and a second surface. Each second prism columns has two interior angles ?b1, ?b2, a third surface and a fourth surface. The second and/or fourth surfaces are light absorbing surfaces, or a roughness of the second and fourth surfaces is greater than that of the first and third surfaces.