Patents by Inventor Chung-Heng Liu

Chung-Heng Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making heterojunction P-I-N photovoltaic cell
    Patent number: 4977097
    Abstract: A heterojunction p-i-n photovoltaic cell having at least three different semiconductor layers formed of at least four different elements comprises a p-type relatively wide band gap semiconductor layer, a high resistivity intrinsic semiconductor layer, used as an absorber of light radiation, and an n-type relatively wide band gap semiconductor layer. The intrinsic layer is in electrically conductive contact on one side with the p-type layer and on an opposite side with the n-type layer. First and second ohmic contacts are in electrically conductive contact with the p-type layer and the n-type layer, respectively.
    Type: Grant
    Filed: August 1, 1989
    Date of Patent: December 11, 1990
    Assignee: Ametek, Inc.
    Inventors: Peter V. Meyers, Chung-Heng Liu, Timothy J. Frey
  • Method of making photovoltaic cell with chloride dip
    Patent number: 4873198
    Abstract: A method of making a multi-layer photovoltaic cell containing a heat-treated layer including Cd and Te, comprising the sequential steps of applying a chloride to the layer, heat-treating the layer with the chloride thereon, and subsequently depositing another semiconductor layer thereon.
    Type: Grant
    Filed: June 2, 1988
    Date of Patent: October 10, 1989
    Assignee: Ametek, Inc.
    Inventors: Peter V. Meyers, Chung-Heng Liu, Timothy J. Frey
  • Heterojunction p-i-n photovoltaic cell
    Patent number: 4710589
    Abstract: A heterojunction p-i-n photovoltaic cell having at least three different semiconductor layers formed of at least four different elements comprises a p-type relatively wide band gap semiconductor layer, a high resistivity intrinsic semiconductor layer, used as an absorber of light radiation, and an n-type relatively wide band gap semiconductor layer. The intrinsic layer is in electrically conductive contact on one side with the p-type layer and on an opposite side with the n-type layer. First and second ohmic contacts are in electrically conductive contact with the p-type layer and the n-type layer, respectively.
    Type: Grant
    Filed: October 21, 1986
    Date of Patent: December 1, 1987
    Assignee: Ametek, Inc.
    Inventors: Peter V. Meyers, Chung-Heng Liu, Timothy J. Frey