Abstract: Provided are a vehicle seat for preventing formation of wrinkles and a method of manufacturing the same, and more particularly, a vehicle seat for preventing formation of wrinkles, whereby a backing cloth between a first foam layer and a second foam layer is bonded using a double flame lamination method so that the first foam layer is freely moved and simultaneously wrinkles can be prevented from being formed on a surface of the vehicle seat, and a method of manufacturing the same.

Abstract: In a method of fabricating a semiconductor device, trenches are formed defining active regions at predetermined portions of a semiconductor substrate. A thermal oxide layer and a liner layer are sequentially formed covering inner walls of the trenches and upper surfaces of the active regions. Device isolation patterns are formed filling the trenches, in which the liner layer is formed, and an upper portion of the liner layer at the upper portions of the active regions are exposed. The exposed liner layer is dry etched to expose an upper portion of the thermal oxide layer at the upper portions of the active regions. The exposed thermal oxide layer is etched to expose the upper surfaces of the active regions.

Abstract: The present invention provides a method of fabricating trench isolation structures of a semiconductor device. A conformal trench filler insulation layer is formed to fill wide and narrow trenches in a substrate. A portion of the trench filler insulation layer filling the wide trench is then removed. Next, a trench protection layer is formed on the trench filler insulation layer. The resultant structure is planarized to leave the trench protection layer over the wide width trench. Another planarization process is then carried out using the etch mask pattern and the remaining trench protection layer as a planarization stopper. Accordingly, the device isolation layer will attain a uniform planarity irrespective of the various widths of the trenches.

Abstract: The present invention provides a method of fabricating trench isolation structure of a semiconductor device. A conformal trench filler insulation layer is formed to fill wide and narrow trenches in a substrate. A portion of the trench filler insulation layer filling the wide trench is then removed. Next, a trench protection layer is formed on the trench filler insulation layer. The resultant structure is planarized to leave the trench protection layer over the wide width trench. Another planarization process is then carried out using the etch mask pattern and the remaining trench protection layer as a planarization stopper. Accordingly, the device isolation layer will attain a uniform planarity irrespective of the various widths of the trenches.