Patents by Inventor Chung-howan Kim

Chung-howan Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing semiconductor devices and semiconductor device capacitor manufactured thereby
    Patent number: 6204191
    Abstract: A method of manufacturing semiconductor device that improves the alignment margin between a contact hole and a device pattern includes a layer having an upper vertically shaped portion and a lower symmetrically inclined shaped portion. That is, the lower portion is tapered.
    Type: Grant
    Filed: June 16, 1999
    Date of Patent: March 20, 2001
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kwang-Jin Jung, Tae-ryong Kim, Chung-howan Kim, Jae-hee Hwang
  • Method of making intermetal dielectric layers having a low dielectric constant
    Patent number: 6124216
    Abstract: A method of forming a low-k dielectric insulating layer includes forming the dielectric insulating layer and then removing hydrogen bonds in the dielectric insulating layer. The dielectric layer as formed is preferably a HSQ film which contains the structure Si--O--H. Hydrogen is removed from the dielectric layer by either: a heat treatment in plasma, an ozone reduction process, an ion implantation process, or electron beam bombardment.
    Type: Grant
    Filed: September 10, 1999
    Date of Patent: September 26, 2000
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ho Ko, Tae-Ryong Kim, Chung-Howan Kim, Dong-Yun Kim, Jong-Heui Song