Abstract: A bonded semiconductor structure includes a first device wafer and a second device wafer. The first device includes a first dielectric layer, a first bonding pad disposed in the first dielectric layer, and a first bonding layer on the first dielectric layer. The second device wafer includes a second dielectric layer, a second bonding layer on the second dielectric layer, and a second bonding pad disposed in the second dielectric layer and extending through the second bonding layer and at least a portion of the first bonding layer. A conductive bonding interface between the first bonding pad and the second bonding pad and a dielectric bonding interface between the first bonding layer and the second bonding layer include a step-height in a direction perpendicular to the dielectric bonding interface and the conductive bonding interface.

Abstract: A semiconductor package includes a redistribution structure, a supporting layer, a semiconductor device, and a transition waveguide structure. The redistribution structure includes a plurality of connectors. The supporting layer is formed over the redistribution structure and disposed beside and between the plurality of connectors. The semiconductor device is disposed on the supporting layer and bonded to the plurality of connectors, wherein the semiconductor device includes a device waveguide. The transition waveguide structure is disposed on the supporting layer adjacent to the semiconductor device, wherein the transition waveguide structure is optically coupled to the device waveguide.

Abstract: A package includes an electronic die, a photonic die underlying and electronically communicating with the electronic die, a lens disposed on the electronic die, and a prism structure disposed on the lens and optically coupled to the photonic die. The prism structure includes first and second polymer layers, the first polymer layer includes a first curved surface concaving toward the photonic die, the second polymer layer embedded in the first polymer layer includes a second curved surface substantially conforming to the first curved surface, and an outer sidewall of the second polymer layer substantially aligned with an outer sidewall of the first polymer layer.

Abstract: A device and a method for robotic arm automatic correction are disclosed. A main structure includes a robotic arm including an optical photographing mechanism, and a wafer storage mechanism at one side of the robotic arm and including a graphic data code. The optical photographing mechanism is in information connection with an optical recognition module that includes a data code analysis unit, an object distance analysis unit, and a wafer center analysis unit. A user uses the optical photographing mechanism to photograph the graphic data code for implementing a first round of position correction for the robotic arm. Then, the optical photographing mechanism photographs a wafer and performs an operation of focusing for calculation of a distance between the robotic arm and a center point of the wafer by means of the object distance analysis unit in combination with the wafer center analysis unit for a second round of correction.

Abstract: Disclosed in a robotic arm with vibration detection and image recognition, of which a main structure includes a wafer transportation device, a robotic arm rotatably mounted on the wafer transportation device, an image acquiring device arranged on the robotic arm, at least one first vibration detector arranged on the robotic arm, a second vibration detector arranged in an interior of the wafer transportation device, and a monitoring device arranged at one side of the wafer transportation device. The monitoring device includes a status inspecting part in information connection with the image acquiring device and a vibration inspecting part in information connection with the first vibration detector and the second vibration detector. By means of the above structure, the robotic arm is additionally provided with functions of wafer storage status inspecting, impact sensing, and lifespan predicting, so as to prevent mutual influence between machine structure operation instability and inspection error.

Abstract: A package includes a photonic layer on a substrate, the photonic layer including a silicon waveguide coupled to a grating coupler; an interconnect structure over the photonic layer; an electronic die and a first dielectric layer over the interconnect structure, where the electronic die is connected to the interconnect structure; a first substrate bonded to the electronic die and the first dielectric layer; a socket attached to a top surface of the first substrate; and a fiber holder coupled to the first substrate through the socket, where the fiber holder includes a prism that re-orients an optical path of an optical signal.

Abstract: A method for inspecting LED dies includes the following steps. First electrodes and second electrodes of LED dies to be inspected are short-circuited via a conductive layer on an inspection substrate, or an inspection bias voltage is applied between the first electrodes and the second electrodes of the LED dies. An excitation light is irradiated on the LED dies to be inspected on the inspection substrate such that the LED dies to be inspected emit a secondary light. When the first electrodes and the second electrodes of the LED dies to be inspected are open, short-circuited, and/or subjected to the inspection bias voltage, the secondary light is captured via an optical sensor. An output of the optical sensor is received via a computer and a spectrum difference of the secondary light is calculated to determine whether the LED dies are abnormal or to classify the LED dies to be inspected.

Abstract: Disclosed herein is a method for inhibiting a coronavirus, which includes administering to a subject in need thereof a retinoic acid and at least one bivalent metal ion. Also disclosed is a method for treating a disease associated with coronavirus infection, which includes administering to a subject in need thereof a retinoic acid and at least one bivalent metal ion.

Abstract: The present disclosure provides an image recording device and an image processing method. The tone adjusting unit includes plural preset tone mapping adjusting curves. The auto exposure unit compares and obtains the nearest brightness interval from plural brightness intervals according to the image information of the original dynamic image. The tone adjusting unit chooses the corresponding tone mapping adjusting curve from the plural tone mapping adjusting curves to adjust the brightness of the original dynamic image according to the brightness interval. Therefore, the image recording device and the image processing method of the present disclosure takes different tone mapping adjusting curves to adjust the brightness of the original dynamic image according to different brightness of the original dynamic image. The image recording device of the present disclosure adjusts the brightness according to different brightness of the original dynamic image.

Abstract: A touch panel includes: a transparent rigid window screen having an inner surface and an outer surface that is adapted to be touched by a user; and a touch sensor module secured to the inner surface of the transparent rigid window screen for detecting at least one touch position of the user's touch on the outer surface. The outer surface of the transparent rigid window screen is formed with an antireflection layer that includes a plurality of protruding pillars protruding outwardly from the outer surface and arranged to take a form of a quasicrystalline pattern having a plurality of pattern sections that are collectively ordered but not periodic.

Abstract: A light emitting device includes a light-generating unit for generating a primary light in a first wavelength range, a wavelength-converting member connected to the light-generating unit for converting a portion of the primary light into a secondary light in a second wavelength range, and an omnidirectional reflector connected to the wavelength-converting member for receiving the secondary light and the remainder of the primary light which was not converted by the wavelength-converting member. The omnidirectional reflector is made from an omnidirectional one-dimensional photonic crystal having a reflectance characteristic that substantially permits total reflection of the remainder of the primary light with any incident angle and polarization back to the wavelength-converting member.

Abstract: A light emitting device includes a photonic crystal having a periodic pattern of elements exhibiting a spectrum of electromagnetic modes that includes guided modes of frequencies below a predetermined cutoff frequency, and radiation modes of frequencies below and above the cutoff frequency. A radiation source is associated with the photonic crystal. Each of the elements is covered by a reflective layer so as to introduce at least an omnidirectional photonic band gap between the guided modes and so as to permit coupling of the radiation to the radiation modes rather than to the guided modes.

Abstract: A light emitting device includes a semiconductor structure having lateral side faces, and including a light-generating layer, and two omnidirectional reflectors disposed respectively at two sides of the light-generating layer. Each of the omnidirectional reflectors exhibits a periodic variation indielectric constant in such a manner so as to introduce an omnidirectional photonic band gap in a given frequency range such that the radiation generated by the light-generating layer in the frequency range for all incident angles and polarizations can be totally reflected by the omnidirectional reflectors and can be extracted substantially only from the lateral side faces of the semiconductor structure.

Abstract: An omnidirectional photonic crystal includes a substrate and a periodic dielectric structure that is formed on the substrate and that includes a stack of dielectric units. Each of the dielectric units includes upper and lower dielectric slabs and at least one intermediate dielectric slab sandwiched between the upper and lower dielectric slabs. The periodic dielectric structure introduces an omnidirectional photonic band gap in a given frequency range. The periodic dielectric structure defines a lattice constant a that is equal to the total thickness of each of the dielectric units. The intermediate dielectric slab has a thickness d, the upper dielectric slab has a thickness equal to x(a?d), and the lower dielectric slab has a thickness equal to (1?x) (a?d), where x is a positive number ranging from 0.2 to 0.8.

Abstract: A light emitting device includes a light emitting diode and an omnidirectional photonic crystal formed on one of an upper outer surface and a lower outer surface of the light emitting diode and exhibiting a periodic variation in dielectric constant in such a manner so as to introduce an omnidirectional photonic band gap in a given frequency range such that the radiation generated by the light emitting diode in the frequency range for all incident angles and polarizations can be totally reflected by the omnidirectional photonic crystal, and that at least a portion of the radiation with frequencies outside the frequency range can pass through the omnidirectional photonic crystal.

Abstract: A light emitting device includes a photonic crystal having a periodic pattern of elements exhibiting a spectrum of electromagnetic modes that includes guided modes of frequencies below a predetermined cutoff frequency, and radiation modes of frequencies below and above the cutoff frequency. A radiation source is associated with the photonic crystal. Each of the elements is covered by a reflective layer so as to introduce at least an omnidirectional photonic band gap between the guided modes and so as to permit coupling of the radiation to the radiation modes rather than to the guided modes.

Abstract: A light emitting device includes a light-generating unit for generating a primary light in a first wavelength range, a wavelength-converting member connected to the light-generating unit for converting a portion of the primary light into a secondary light in a second wavelength range, and an omnidirectional reflector connected to the wavelength-converting member for receiving the secondary light and the remainder of the primary light which was not converted by the wavelength-converting member. The omnidirectional reflector is made from an omnidirectional one-dimensional photonic crystal having a reflectance characteristic that substantially permits total reflection of the remainder of the primary light with any incident angle and polarization back to the wavelength-converting member.