Abstract: Provided is an anti-fuse memory including a anti-fuse memory cell including an isolation structure, a select gate, first and second gate insulating layers, an anti-fuse gate, and first, second and third doped regions. The isolation structure is disposed in a substrate. The select gate is disposed on the substrate. The first gate insulating layer is disposed between the select gate and the substrate. The anti-fuse gate is disposed on the substrate and partially overlapped with the isolation structure. The second gate insulating layer is disposed between the anti-fuse gate and the substrate. The first doped region and the second doped region are disposed in the substrate at opposite sides of the select gate, respectively, wherein the first doped region is located between the select gate and the anti-fuse gate. The third doped region is disposed in the substrate and located between the first doped region and the isolation structure.

Abstract: An adhesive composition is provided. The adhesive composition includes an organic silicon polymer, a silicon coupling agent, carboxylic polyester, and a solvent. Based on the total weight of the adhesive composition, the content of the organic silicon polymer is 10 wt % to 60 wt %, the content of the silicon coupling agent is 10 wt % to 60 wt %, and the content of the carboxylic polyester is 10 wt % to 60 wt %.