Abstract: A semiconductor device includes a substrate; a memory array over the substrate, the memory array including first magnetic tunnel junctions (MTJs), where the first MTJs are in a first dielectric layer over the substrate; and a resistor circuit over the substrate, the resistor circuit including second MTJs, where the second MTJs are in the first dielectric layer.

Abstract: A method for removing a heavy metal from water includes subjecting a microbial solution containing a liquid culture of a urease-producing bacterial strain and a reaction solution containing a manganese compound and urea to a microbial-induced precipitation reaction, so as to obtain biomineralized manganese carbonate (MnCO3) particles, admixing the biomineralized MnCO3 particles with water containing a heavy metal, so that the biomineralized MnCO3 particles adsorb the heavy metal in the water to form a precipitate, and removing the precipitate from the water.

Abstract: The present invention generally relates to a hydroponic culture medium and a hydroponic planting system, more particularly to a Houttuynia cordata hydroponic culture medium, a Houttuynia cordata hydroponic planting system, Houttuynia cordata extracts, a method, and applications thereof.

Abstract: The instant disclosure described a system and method to prevent the oxidizer overheating using cold side bypass for a VOCs treatment system with series rotor, which may be used in an organic waste air treatment system. The system is equipped with a Thermal Oxidizer (TO), a First Heat Exchanger, a Second Heat Exchanger, a third heat exchanger, a First Cold-Side Transporting Pipeline, a First Adsorption Rotor, a Second Adsorption Rotor, and a Chimney. There is a Cold-Side Proportional Damper installed between the First Desorption-Treated Air Pipeline and the First Cold-Side Transporting Pipeline, or it is installed on the First Desorption-Treated Air Pipeline. When the VOCs concentration becomes higher, the Cold-Side Proportional Damper can regulate the airflow to adjust the heat-recovery amount or concentration, when treating the organic waste air, it can prevent the TO from being overheated due to high oxidizer temperature, and protect it from Thermal Oxidizer shut-down.

Abstract: A system and method to prevent the oxidizer overheating using cold side bypass during high input for a VOCs treatment system with series rotor are described, which may be used in an organic waste air treatment system. The system is equipped with a Thermal Oxidizer (TO), a First Heat Exchanger, a Second Heat Exchanger, a third heat exchanger, a Fourth Heat Exchanger, a First Cold-Side Transporting Pipeline, a Fourth Cold-Side Transporting Pipeline, a First Adsorption Rotor, a Second Adsorption Rotor, and a Chimney. There is a Cold-Side Proportional Damper installed between the First Desorption-Treated Air Pipeline and the First Cold-Side Transporting Pipeline, the First Desorption-Treated Air Pipeline and the Fourth Cold-Side Transporting Pipeline or between the First Cold-Side Transporting Pipeline and the Fourth Cold-Side Transporting Pipeline, or the damper is installed on the First Desorption-Treated Air Pipeline.

Abstract: The disclosure relates to preventing an oxidizer from overheating using cold side bypass during high input for a VOCs treatment system having a series rotor, which may be used in an organic waste air treatment system. The system includes a thermal oxidizer (TO), a first heat exchanger, a second heat exchanger, a third heat exchanger, a fourth heat exchanger, a first cold-side transporting pipeline, a fourth cold-side transporting pipeline, a first adsorption rotor, a second adsorption rotor, and a chimney. A cold-side proportional damper is installed between the first desorption-treated air pipeline and the first cold-side transporting pipeline, between the first desorption-treated air pipeline and the fourth cold-side transporting pipeline, or between the first cold-side transporting pipeline and the fourth cold-side transporting pipeline, or the damper is installed on the first desorption-treated air pipeline.

Abstract: A system and method to prevent an oxidizer overheating using cold side bypass for a volatile organic compounds (VOCs) treatment system with a series rotor are described, which is mainly used in the organic waste air treatment system. The system is equipped with a thermal oxidizer (to), a first heat exchanger, a second heat exchanger, a third heat exchanger, a first cold-side transporting pipeline, a first adsorption rotor, a second adsorption rotor, and a chimney. A cold-side proportional damper is installed between the first desorption-treated air pipeline and the first cold-side transporting pipeline, or it is installed on the first desorption-treated air pipeline. When the VOCs concentration becomes higher, the cold-side proportional damper can regulate the airflow to adjust the heat-recovery amount or concentration, when treating the organic waste air, it can prevent the thermal oxidizer from being overheated due to high oxidizer temperature, and protect from thermal oxidizer shut-down.

Abstract: A carbon dioxide and exhaust gas capture device that is a device being unique in the world and being able to truly suppress carbon dioxide is provides and has a cold water tank set, a photosynthetic tank set, and a terrestrial plant tank set. The cold water tank set reduces temperature of exhaust gas and filters toxic gases and pollutant particles. The photosynthetic tank set and the terrestrial plant tank set further photosynthesize the exhaust gas with organisms that derive energy from photosynthesis and terrestrial plants to produce oxygen. Moreover, the carbon dioxide and exhaust gas capture device requires low cost, has high efficiency, produces zero pollution during the process, has a long service life, and has high added value.

Abstract: A system and method to prevent the oxidizer overheating using cold side bypass during high input for a VOCs treatment system with series rotor are described, which may be used in an organic waste air treatment system. The system is equipped with a Thermal Oxidizer (TO), a First Heat Exchanger, a Second Heat Exchanger, a third heat exchanger, a Fourth Heat Exchanger, a First Cold-Side Transporting Pipeline, a Fourth Cold-Side Transporting Pipeline, a First Adsorption Rotor, a Second Adsorption Rotor, and a Chimney. There is a Cold-Side Proportional Damper installed between the First Desorption-Treated Air Pipeline and the First Cold-Side Transporting Pipeline, the First Desorption-Treated Air Pipeline and the Fourth Cold-Side Transporting Pipeline or between the First Cold-Side Transporting Pipeline and the Fourth Cold-Side Transporting Pipeline, or the damper is installed on the First Desorption-Treated Air Pipeline.

Abstract: The instant disclosure described a system and method to prevent the oxidizer overheating using cold side bypass for a VOCs treatment system with series rotor, which may be used in an organic waste air treatment system. The system is equipped with a Thermal Oxidizer (TO), a First Heat Exchanger, a Second Heat Exchanger, a third heat exchanger, a First Cold-Side Transporting Pipeline, a First Adsorption Rotor, a Second Adsorption Rotor, and a Chimney. There is a Cold-Side Proportional Damper installed between the First Desorption-Treated Air Pipeline and the First Cold-Side Transporting Pipeline, or it is installed on the First Desorption-Treated Air Pipeline. When the VOCs concentration becomes higher, the Cold-Side Proportional Damper can regulate the airflow to adjust the heat-recovery amount or concentration, when treating the organic waste air, it can prevent the TO from being overheated due to high oxidizer temperature, and protect it from Thermal Oxidizer shut-down.

Abstract: An electro-acoustic product stabilizing device includes: a sound device; an angle adjustment element, coupled pivotally to one side of the sound device; a hard fixation portion, configured on one side of the angle adjustment element; and a flexible support element, in connection with the angle adjustment element. Whereby, when the electro-acoustic product of the present invention is a headset or hearing aid, it is attached and fixed in a user's ear through the characteristic of the flexible support element being capable of adaptable shape change to be fixed to the use's inner ear bones; and then, the attachment of the flexible support element to the ear to be more comfortable through the angle adjustment element in combination with the sound device. In addition, the strengthening fixation of the hard fixation portion to the sound device increases the combination stability of the sound device with the ear.

Abstract: The earpiece structure includes a main member having a sound releasing element on an inner side, a fixation element besides the sound releasing element slant toward an outer side of the main member, and an extension element between the sound releasing element and the fixation element. A number of through opening are configured on the extension element, each configured with a tuning element. A speaker element is disposed on the fixation element. Due to the slant arrangement of the fixation element, the sound wave from the speaker element progresses directly towards a user's eardrum through the ear canal. The tuning elements achieve an optimal proportion between air pressures of front and rear chambers of the earpiece structure, allowing the sound wave to reverberate and reflect in a sound space and achieving superior sound field.

Abstract: A scroll type air compressor provided by the invention utilizes an L-shape mounting frame for respectively mounting a compressor and a generator to a first mounting section and a second mounting section thereon. The generator is mounted to the second mounting section via a plate and is capable of being fine-tuned in displacement with respect to the plate, such that a second end surface of a second drive pulley of the generator can be made coplanar with a first end surface of a first drive pulley of the compressor. The position of the plate can also be adjusted up and down with respect to the second mounting section to a required position so that the distance between the drive pulleys of the generator and the compressor can be adjusted and the tension of a transmission belt can be determined.

Abstract: A FinFET structure layout includes a semiconductor substrate comprising a plurality of FinFET active areas, and a plurality of fins within each FinFET active area of the plurality of FinFET active areas. The FinFET structure layout further includes a gate having a gate length parallel to the semiconductor substrate and perpendicular to length of the plurality of fins within each FinFET active area of the plurality of FinFET active areas. The FinFET structure layout further includes a plurality of metal features connecting a source region or a drain region of a portion of the plurality of FinFET active areas to a plurality of contacts. The plurality of metal features includes a plurality of metal lines parallel to a FinFET channel direction and a plurality of metal lines parallel to a FinFET channel width direction.

Abstract: The disclosure relates to a fin structure of a semiconductor device. An exemplary fin structure for a semiconductor device comprises a lower portion protruding from a major surface of a substrate, wherein the lower portion comprises a first semiconductor material having a first lattice constant; an upper portion having an interface with the lower portion, wherein the upper portion comprises a second semiconductor material having a second lattice constant different from the first lattice constant; a first pair of notches lower than the interface and extending into opposite sides of the lower portion, wherein each first notch have a first width; and a second pair of notches extending into opposite sides of the interface, wherein each second notch have a second width greater than the first width.

Abstract: A method of fabricating a semiconductor device comprises forming a fin structure extending from a substrate, the fin structure comprising a first fin, a second fin, and a third fin between the first fin and the second fin. The method further comprises forming germanide over a first facet of the first fin, a second facet of the second fin, and a substantially planar surface of the third fin, wherein the first facet forms a first acute angle with a major surface of the substrate and is substantially mirror symmetric with the second facet, and wherein the substantially planar surface of the third fin forms a second acute angle smaller than the first acute angle with the major surface of the substrate.

Abstract: A semiconductor device comprises a substrate comprising a major surface; a p-type Field Effect Transistor (pFET) comprising: a P-gate stack over the major surface, a P-strained region in the substrate adjacent to one side of the P-gate stack, wherein a lattice constant of the P-strained region is different from a lattice constant of the substrate, wherein the P-strained region has a first top surface higher than the major surface; and a P-silicide region on the P-strained region; and an n-type Field Effect Transistor (nFET) comprising: an N-gate stack over the major surface, an N-strained region in the substrate adjacent to one side of the N-gate stack, wherein a lattice constant of the N-strained region is different from a lattice constant of the substrate, wherein the N-strained region has a second top surface lower than the major surface and a N-silicide region on the N-strained region.

Abstract: The disclosure relates to a fin structure of a semiconductor device. An exemplary fin structure for a semiconductor device comprises a lower portion protruding from a major surface of a substrate, wherein the lower portion comprises a first semiconductor material having a first lattice constant; an upper portion having an interface with the lower portion, wherein the upper portion comprises a second semiconductor material having a second lattice constant different from the first lattice constant; a first pair of notches lower than the interface and extending into opposite sides of the lower portion, wherein each first notch have a first width; and a second pair of notches extending into opposite sides of the interface, wherein each second notch have a second width greater than the first width.

Abstract: A method of fabricating a semiconductor device comprises forming a fin structure extending from a substrate, the fin structure comprising a first fin, a second fin, and a third fin between the first fin and the second fin. The method further comprises forming germanide over a first facet of the first fin, a second facet of the second fin, and a substantially planar surface of the third fin, wherein the first facet forms a first acute angle with a major surface of the substrate and is substantially mirror symmetric with the second facet, and wherein the substantially planar surface of the third fin forms a second acute angle smaller than the first acute angle with the major surface of the substrate.

Abstract: The disclosure relates to a fin structure of a semiconductor device. An exemplary fin structure for a semiconductor device comprises a lower portion protruding from a major surface of a substrate, wherein the lower portion comprises a first semiconductor material having a first lattice constant; an upper portion having an interface with the lower portion, wherein the upper portion comprises a second semiconductor material having a second lattice constant different from the first lattice constant; a first pair of notches lower than the interface and extending into opposite sides of the lower portion, wherein each first notch have a first width; and a second pair of notches extending into opposite sides of the interface, wherein each second notch have a second width greater than the first width.