Patents by Inventor Chunghsien Lee

Chunghsien Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of controlling implantation dosages during coding of read-only memory devices
    Patent number: 6969642
    Abstract: A method of controlling implantation dosages during coding of read-only memory (ROM) devices is disclosed. According to the method, a semi-manufactured ROM device having a plurality of gates with identically designed gate widths is formed, followed by the formation of a first photoresist layer over the semi-manufactured ROM device. The first photoresist layer is selectively exposed to develop a pattern of pre-code openings, with each pre-code opening being positioned over a word line and between two adjacent bit lines intersecting the word line and with the pre-code openings having substantially identical sizes. A second photoresist layer is then formed over the first photoresist layer, followed by selectively exposing the second photoresist layer to develop a pattern of real-code openings therein, with the real-code openings having substantially identical sizes. A tuned dosage of ions is then implanted through intersections of the real-code and pre-code openings to thereby code the ROM device.
    Type: Grant
    Filed: July 25, 2003
    Date of Patent: November 29, 2005
    Assignee: Macronix International Co., Ltd.
    Inventors: Ta Hung Yang, Tien Chu Yang, Tsung Hsien Wu, Chunghsien Lee, Kuo Chuang Hui
  • Method of controlling implantation dosages during coding of read-only memory devices
    Publication number: 20050020016
    Abstract: A method of controlling implantation dosages during coding of read-only memory (ROM) devices is disclosed. According to the method, a semi-manufactured ROM device having a plurality of gates with identically designed gate widths is formed, followed by the formation of a first photoresist layer over the semi-manufactured ROM device. The first photoresist layer is selectively exposed to develop a pattern of pre-code openings, with each pre-code opening being positioned over a word line and between two adjacent bit lines intersecting the word line and with the pre-code openings having substantially identical sizes. A second photoresist layer is then formed over the first photoresist layer, followed by selectively exposing the second photoresist layer to develop a pattern of real-code openings therein, with the real-code openings having substantially identical sizes. A tuned dosage of ions is then implanted through intersections of the real-code and pre-code openings to thereby code the ROM device.
    Type: Application
    Filed: July 25, 2003
    Publication date: January 27, 2005
    Inventors: Ta Yang, Tien Yang, Tsung Wu, Chunghsien Lee, Kuo Hui