Abstract: The present disclosure pertains to a die bonding structure. The die bonding structure includes a carrier substrate, a sintered layer, a nano-twinned layer, an adhesive layer and a chip. The sintered layer is located on the carrier substrate. The nano-twinned layer is located on the sintered layer, in which the surface of the nano-twinned layer has [111] crystal orientation with a density greater than 80%, in which the nano-twinned layer comprises parallel-arranged twin boundaries, the parallel-arranged twin boundaries comprise more than 40% [111] crystal orientation, and the spacing between the parallel-arranged twin boundaries is 10 to 100 nm. The adhesive layer is located on the nano-twinned layer. The chip is located on the adhesive layer.

Abstract: A method for forming a bonding structure is provided, including providing a first metal, wherein the first metal has a first absolute melting point. The method includes forming a silver nano-twinned layer on the first metal. The silver nano-twinned layer includes parallel-arranged twin boundaries. The parallel-arranged twin boundaries include 90% or more [111] crystal orientation. The method includes oppositely bonding the silver nano-twinned layer to a second metal. The second metal has a second absolute melting point. The bonding of the silver nano-twinned layer and the second metal is performed at a temperature of 300° C. to half of the first absolute melting point or 300° C. to half of the second absolute melting point.

Abstract: A silver nano-twinned thin film structure and a method for forming the same are provided. A silver nano-twinned thin film structure, including: a substrate; an adhesive-lattice-buffer layer over the substrate; and a silver nano-twinned thin film over the adhesive-lattice-buffer layer, wherein the silver nano-twinned thin film comprises parallel-arranged twin boundaries, and a cross-section of the silver nano-twinned thin film reveals that 50% or more of all twin boundaries are parallel-arranged twin boundaries, wherein the parallel-arranged twin boundaries include ?3 and ?9 boundaries, wherein the ?3 and ?9 boundaries include 95% or more crystal orientation.

Abstract: A silver nano-twinned thin film structure and a method for forming the same are provided. A silver nano-twinned thin film structure, including: a substrate; an adhesive-lattice-buffer layer over the substrate; and a silver nano-twinned thin film over the adhesive-lattice-buffer layer, wherein the silver nano-twinned thin film comprises parallel-arranged twin boundaries, and a cross-section of the silver nano-twinned thin film reveals that 50% or more of all twin boundaries are parallel-arranged twin boundaries, wherein the parallel-arranged twin boundaries include ? 3 and ?9 boundaries, wherein the ?3 and ?9 boundaries include 95% or more crystal orientation.