Abstract: A battery balancing system includes a voltage sensing unit, a characteristic voltage selector and a control unit. The voltage sensing unit senses a battery voltage of each of the batteries connected in series in a battery group and generates corresponding battery voltage sensing signals. The characteristic voltage selector generates a characteristic voltage according to the battery voltage sensing signals. The control unit compares the characteristic voltage with a threshold voltage in a balance operation mode, to adaptively adjust the threshold voltage, and compares the battery voltage sensing signal with the adjusted threshold voltage to generate a battery balancing command, thereby executing a charge removal balancing command or a charge supplying balancing command on the corresponding battery, or thereby cease executing the charge removal balancing command or cease executing the charge supplying balancing command on the corresponding battery.

Abstract: A method for forming a bonding structure is provided, including providing a first metal, wherein the first metal has a first absolute melting point. The method includes forming a silver nano-twinned layer on the first metal. The silver nano-twinned layer includes parallel-arranged twin boundaries. The parallel-arranged twin boundaries include 90% or more [111] crystal orientation. The method includes oppositely bonding the silver nano-twinned layer to a second metal. The second metal has a second absolute melting point. The bonding of the silver nano-twinned layer and the second metal is performed at a temperature of 300° C. to half of the first absolute melting point or 300° C. to half of the second absolute melting point.

Abstract: A silver nano-twinned thin film structure and a method for forming the same are provided. A silver nano-twinned thin film structure, including: a substrate; an adhesive-lattice-buffer layer over the substrate; and a silver nano-twinned thin film over the adhesive-lattice-buffer layer, wherein the silver nano-twinned thin film comprises parallel-arranged twin boundaries, and a cross-section of the silver nano-twinned thin film reveals that 50% or more of all twin boundaries are parallel-arranged twin boundaries, wherein the parallel-arranged twin boundaries include ?3 and ?9 boundaries, wherein the ?3 and ?9 boundaries include 95% or more crystal orientation.

Abstract: A silver nano-twinned thin film structure and a method for forming the same are provided. A silver nano-twinned thin film structure, including: a substrate; an adhesive-lattice-buffer layer over the substrate; and a silver nano-twinned thin film over the adhesive-lattice-buffer layer, wherein the silver nano-twinned thin film comprises parallel-arranged twin boundaries, and a cross-section of the silver nano-twinned thin film reveals that 50% or more of all twin boundaries are parallel-arranged twin boundaries, wherein the parallel-arranged twin boundaries include ? 3 and ?9 boundaries, wherein the ?3 and ?9 boundaries include 95% or more crystal orientation.