Patents by Inventor Chung-Hsing Chana

Chung-Hsing Chana has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Dual trench alternating phase shift mask fabrication
    Patent number: 7445159
    Abstract: Fabricating a dual-trench alternating phase shift mask (PSM) is disclosed. A chromium layer over a mask layer, which is over a quartz layer, of the PSM is patterned according to a semiconductor design. The mask layer is dry etched according to deep trenches of a PSM design. The quartz layer is dry etched a first number of times through a first photoresist layer applied over the chromium layer and patterned according to the deep trenches of the PSM design by using backside ultraviolet exposure. The mask layer is dry etched again, according to shallow trenches of the PSM design. The quartz layer is dry etched a second number of times through a second photoresist layer applied over the chromium layer and patterned according to the shallow trenches of the PSM design by using backside ultraviolet exposure.
    Type: Grant
    Filed: February 13, 2006
    Date of Patent: November 4, 2008
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: San-De Tzu, Ming-Shuo Yen, Chung-Hsing Chana
  • Dual trench alternating phase shift mask fabrication
    Publication number: 20070190793
    Abstract: Fabricating a dual-trench alternating phase shift mask (PSM) is disclosed. A chromium layer over a mask layer, which is over a quartz layer, of the PSM is patterned according to a semiconductor design. The mask layer is dry etched according to deep trenches of a PSM design. The quartz layer is dry etched a first number of times through a first photoresist layer applied over the chromium layer and patterned according to the deep trenches of the PSM design by using backside ultraviolet exposure. The mask layer is dry etched again, according to shallow trenches of the PSM design. The quartz layer is dry etched a second number of times through a second photoresist layer applied over the chromium layer and patterned according to the shallow trenches of the PSM design by using backside ultraviolet exposure.
    Type: Application
    Filed: February 13, 2006
    Publication date: August 16, 2007
    Inventors: San-De Tzu, Ming-Shuo Yen, Chung-Hsing Chana