Abstract: A conductive line structure includes: first and second offset sets of long pillars that are substantially coaxial on an intra-set basis; a third set of offset short pillars, the short pillars being: overlapping of long pillars in the first and second sets; and organized into groups of first quantities of the short pillars; each of the groups being overlapping of and electrically coupled between a pair of one of the long pillars in the first set and a one of the long pillars in the second set such that, in each of the groups, each short pillar being overlapping of and electrically coupled between the pair; and each long pillar in each of the first and second sets being overlapped by a second quantity of short pillars in the third set and being electrically coupled to same; and the first quantity being less than the second quantity.

Abstract: A semiconductor device preferably includes: a first metal-oxide semiconductor (MOS) transistor on a substrate; a first ferroelectric (FE) layer connected to the first MOS transistor; a second MOS transistor on the substrate; and a second FE layer connected to the second MOS transistor. Preferably, the first FE layer and the second FE layer include different capacitance.

Abstract: A semiconductor device preferably includes: a first metal-oxide semiconductor (MOS) transistor on a substrate; a first ferroelectric (FE) layer connected to the first MOS transistor; a second MOS transistor on the substrate; and a second FE layer connected to the second MOS transistor. Preferably, the first FE layer and the second FE layer include different capacitance.

Abstract: A process for depositing an oxynitride film on a substrate by liquid phase deposition. A nitrogen radical-containing solution is added to a silicon dioxide supersaturated solution to obtain a deposition solution. Then, a substrate is contacted with the deposition solution to deposit the oxynitride film on the substrate, followed by thermal annealing under nitrogen.