Abstract: A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions, a channel between the first and second S/D regions, a gate engaging the channel, and a contact feature connecting to the first S/D region. The contact feature includes first and second contact layers. The first contact layer has a conformal cross-sectional profile and is in contact with the first S/D region on at least two sides thereof. In embodiments, the first contact layer is in direct contact with three or four sides of the first S/D region so as to increase the contact area. The first contact layer includes one of a semiconductor-metal alloy, an III-V semiconductor, and germanium.

Abstract: The present invention provides an electrostatic charge detecting packaging device comprising a carrier, multiple dies, and multiple electrostatic-charge-sensitive components; the carrier has a surface; the dies are mounted on the surface of the carrier; and the electrostatic-charge-sensitive components are mounted on the surface of the carrier; since an electrostatic voltage tolerance of each of the electrostatic-charge-sensitive components is lower than an electrostatic voltage tolerance of each of the dies, accumulated electrostatic charges are more likely to discharge towards the electrostatic-charge-sensitive components than towards the dies, and as such, by electrically testing whether the electrostatic-charge-sensitive components are functioning normally when packaging the dies, the present invention allows personnel to debug for knowing which packaging steps exactly cause more serious problems that lead to damaging electrostatic discharges in the dies.

Abstract: A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions, a channel between the first and second S/D regions, a gate engaging the channel, and a contact feature connecting to the first S/D region. The contact feature includes first and second contact layers. The first contact layer has a conformal cross-sectional profile and is in contact with the first S/D region on at least two sides thereof. In embodiments, the first contact layer is in direct contact with three or four sides of the first S/D region so as to increase the contact area. The first contact layer includes one of a semiconductor-metal alloy, an III-V semiconductor, and germanium.

Abstract: An integrated circuit includes a first power rail and a second power rail extending in a first direction, and a first power grid stub connected to the first power rail through a first via-connector. The integrated circuit also includes a first vertical conducting line extending in a second direction in a circuit cell between a first vertical cell boundary and a second vertical cell boundary. The first vertical conducting line and the first power grid stub are in a same metal layer and aligned with each other along the second direction.

Abstract: A method of manufacturing a multi-layer coil includes steps of providing a substrate; forming a seed layer on the substrate; and plating the seed layer with N coil layers by N current densities according to N threshold ranges, so as to form the multi-layer coil on the substrate, wherein an i-th current density of the N current densities is lower than an (i+1)-th current density of the N current densities. A first coil layer of the N coil layers is plated on the seed layer by a first current density of the N current densities. When an aspect ratio of an i-th coil layer of the N coil layers is within an i-th threshold range of the N threshold ranges, an (i+1)-th coil layer of the N coil layers is plated on the i-th coil layer by the (i+1)-th current density.

Abstract: A current conducting element including a substrate, a through hole, an electrode layer and a conductor structure is provided. The through hole is disposed through the substrate and has a first opening. The electrode layer is disposed on the substrate. A portion of the first opening is exposed from the electrode layer. The conductor structure is disposed in the through hole and contacted with the electrode layer. The electrode layer and the conductor structure form a current conducting path.

Abstract: A protective device including a substrate, a conductive section and a bridge element is provided. The conductive section is supported by the substrate, wherein the conductive section comprises a metal element electrically connected between first and second electrodes. The metal element serves as a sacrificial structure having a melting point lower than that of the first and second electrodes. The bridge element spans across the metal element in a direction across direction of current flow in the metal element, wherein the bridge element facilitates breaking of the metal element upon melting.

Abstract: Disclosed herein is an Autographa californica multiple nucleopolyhedrovirus (AcMNPV) based hybrid baculovirus and its uses thereof. The AcMNPV based hybrid baculovirus is capable of infecting different hosts, and comprises Maruca vitrata multiple nucleopolyhedrovirus (MaviMNPV) genes of lef1, orf1629, pk1, CDS1, CDS2, and lef2; and AcMNPV/MaviMNPV-hybrid genes of egt and orf152. The AcMNPV based hybrid baculovirus is therefore useful as a bio-insecticide by its capability of delivering genes of toxic proteins to be expressed in at least two different insect hosts.

Abstract: Disclosed herein is an Autographa californica multiple nucleopolyhedrovirus (AcMNPV) based hybrid baculovirus and its uses thereof. The AcMNPV based hybrid baculovirus is capable of infecting different hosts, and comprises Maruca vitrata multiple nucleopolyhedrovirus (MaviMNPV) genes of lef1, orf1629, pk1, CDS1, CDS2, and lef2; and AcMNPV/MaviMNPV-hybrid genes of egt and orf152. The AcMNPV based hybrid baculovirus is therefore useful as a bio-insecticide by its capability of delivering genes of toxic proteins to be expressed in at least two different insect hosts.

Abstract: A protective device including a substrate, a conductive section and a bridge element is provided. The conductive section is supported by the substrate, wherein the conductive section comprises a metal element electrically connected between first and second electrodes. The metal element serves as a sacrificial structure having a melting point lower than that of the first and second electrodes. The bridge element spans across the metal element in a direction across direction of current flow in the metal element, wherein the bridge element facilitates breaking of the metal element upon melting.

Abstract: A protective device includes a substrate, an electrode layer, a metal structure, an outer cover and an arc extinguishing structure. The electrode layer is disposed on the substrate. The electrode layer includes at least one gap. The metal structure is disposed on the electrode layer and located above the gap, and the metal structure has a melting temperature lower than a melting temperature of the electrode layer. The outer cover is disposed on the substrate and covers the metal structure and a portion of the electrode layer. The arc extinguishing structure is disposed between the outer cover and the substrate. A protective module is further provided.

Abstract: A protective device includes a substrate, two first electrodes, a low-melting point metal layer and an assisting layer. The first electrodes are respectively arranged at two opposite sides of the substrate. The low melting point metal layer is arranged over the two first electrodes. The assisting layer is formed on the low melting point metal layer. The liquidus temperature of the assisting layer is below the liquidus temperature of the low melting point metal layer, and the liquidus temperature of the assisting layer is not below a predetermined temperature which is below the maximum working temperature of reflow soldering process by 25 degrees.

Abstract: A method of manufacturing a multi-layer coil includes steps of providing a substrate; forming a seed layer on the substrate; and plating the seed layer with N coil layers by N current densities according to N threshold ranges, so as to form the multi-layer coil on the substrate, wherein an i-th current density of the N current densities is lower than an (i+1)-th current density of the N current densities. A first coil layer of the N coil layers is plated on the seed layer by a first current density of the N current densities. When an aspect ratio of an i-th coil layer of the N coil layers is within an i-th threshold range of the N threshold ranges, an (i+1)-th coil layer of the N coil layers is plated on the i-th coil layer by the (i+1)-th current density.

Abstract: The present invention provides a molecular marker for detecting Nosema infection, comprising at least one sequence selected from a gene sequence or a complementary sequence thereof of SR-22, SR-28, SR-71, and SR-85. By designing specific primer sets based on the sequences of molecular marker, the early stage and latent infections of Nosema can be detected, and the infection levels can also be determined.

Abstract: A current conducting element including a substrate, a through hole, an electrode layer and a conductor structure is provided. The through hole is disposed through the substrate and has a first opening. The electrode layer is disposed on the substrate. A portion of the first opening is exposed from the electrode layer. The conductor structure is disposed in the through hole and contacted with the electrode layer. The electrode layer and the conductor structure form a current conducting path.

Abstract: A protective device includes a substrate, an electrode layer, a metal structure, an outer cover and an arc extinguishing structure. The electrode layer is disposed on the substrate. The electrode layer includes at least one gap. The metal structure is disposed on the electrode layer and located above the gap, and the metal structure has a melting temperature lower than a melting temperature of the electrode layer. The outer cover is disposed on the substrate and covers the metal structure and a portion of the electrode layer. The arc extinguishing structure is disposed between the outer cover and the substrate. A protective module is further provided.

Abstract: A protective device including a substrate, a conductive section and a first auxiliary medium is provided. The conductive section is supported by the substrate, wherein the conductive section comprises a metal element electrically connected between first and second electrodes. The metal element serves as a sacrificial structure having a melting point lower than that of the first and second electrodes. The first auxiliary medium is disposed between the metal element and the substrate, wherein the first auxiliary medium has a melting point lower than that of the metal element. The first auxiliary medium facilitates breaking of the metal element upon melting.

Abstract: A protective device including a substrate, a conductive section and a bridge element is provided. The conductive section is supported by the substrate, wherein the conductive section comprises a metal element electrically connected between first and second electrodes. The metal element serves as a sacrificial structure having a melting point lower than that of the first and second electrodes. The bridge element spans across the metal element in a direction across direction of current flow in the metal element, wherein the bridge element facilitates breaking of the metal element upon melting.

Abstract: A protective device including a substrate, a conductive section and a first auxiliary medium is provided. The conductive section is supported by the substrate, wherein the conductive section comprises a metal element electrically connected between first and second electrodes. The metal element serves as a sacrificial structure having a melting point lower than that of the first and second electrodes. The first auxiliary medium is disposed between the metal element and the substrate, wherein the first auxiliary medium has a melting point lower than that of the metal element. The first auxiliary medium facilitates breaking of the metal element upon melting.

Abstract: A protective device including a substrate, a conductive section and a first auxiliary medium is provided. The conductive section is supported by the substrate, wherein the conductive section comprises a metal element electrically connected between first and second electrodes. The metal element serves as a sacrificial structure having a melting point lower than that of the first and second electrodes. The first auxiliary medium is disposed between the metal element and the substrate, wherein the first auxiliary medium has a melting point lower than that of the metal element. The first auxiliary medium facilitates breaking of the metal element upon melting.