Abstract: A manufacturing method of a semiconductor structure includes the following steps. A first wafer is provided. The first wafer includes a first substrate and a first device layer. A second wafer is provided. The second wafer includes a second substrate and a second device layer. The second device layer is bonded to the first device layer. An edge trimming process is performed on the first wafer and the second wafer to expose a first upper surface of the first substrate and a second upper surface of the first substrate and to form a damaged region in the first substrate below the first upper surface and the second upper surface. The second upper surface is higher than the first upper surface. A first photoresist layer is formed. The first photoresist layer is located on the second wafer and the second upper surface and exposes the first upper surface and the damaged region. The damaged region is removed by using the first photoresist layer as a mask. The first photoresist layer is removed.

Abstract: A calibration method for emulating a Group III-V semiconductor device, a method for determining trap location within a Group III-V semiconductor device and method for manufacturing a Group III-V semiconductor device are provided. Actual tape-out is performed according to an actual process flow of the Group III-V semiconductor device for manufacturing the Group III-V semiconductor devices and PCM Group III-V semiconductor device. Actual electrical performances of the Group III-V semiconductor devices and the PCM Group III-V semiconductor device are obtained and the actual electrical performances of the Group III-V semiconductor devices and the PCM Group III-V semiconductor device are compared to determine locations where one or more traps appear.

Abstract: An optical sensing apparatus including: a substrate including a first material; an absorption region including a second material different from the first material; an amplification region formed in the substrate and configured to collect at least a portion of the photo-carriers from the absorption region and to amplify the portion of the photo-carriers; an interface-dopant region formed in the substrate between the absorption region and the amplification region; a buffer layer formed between the absorption region and the interface-dopant region; one or more field-control regions formed between the absorption region and the interface-dopant region and at least partially surrounding the buffer layer; and a buried-dopant region formed in the substrate and separated from the absorption region, where the buried-dopant region is configured to collect at least a portion of the amplified portion of the photo-carriers from the amplification region.

Abstract: Systems and methods for context aware circuit design are described herein. A method includes: identifying at least one cell to be designed into a circuit; identifying at least one context parameter having an impact to layout dependent effect of the circuit; generating, for each cell and for each context parameter, a plurality of abutment environments associated with the cell; estimating, for each cell and each context parameter, a sensitivity of at least one electrical property of the cell to the context parameter by generating a plurality of electrical property values of the cell under the plurality of abutment environments; and determining whether each context parameter is a key context parameter for a static analysis of the circuit, based on the sensitivity of the at least one electrical property of each cell and based on at least one predetermined threshold.

Abstract: In various examples, a diagnostic circuit is connected to a target system to automatically trigger the target system to enter a diagnostic mode. The diagnostic circuit receives diagnostic data from the target system when the target system performs a diagnostic operation in the diagnostic mode.

Abstract: A display may include an array of pixels such as light-emitting diode pixels. The pixels may include multiple circuitry decks that each include one or more circuit components such as transistors, capacitors, and/or resistors. The circuitry decks may be vertically stacked. Each circuitry deck may include a planarization layer formed from a siloxane material that conforms to underlying components and provides a planar upper surface. In this way, circuitry components may be vertically stacked to mitigate the size of each pixel footprint. The circuitry components may include capacitors that include both a high-k dielectric layer and a low-k dielectric layer. The display pixel may include a via with a width of less than 1 micron.

Abstract: A magnetic memory including a substrate, a spin-orbit torque (SOT) layer, a magnetic tunnel junction (MTJ) stack, a first protection layer, and a second protection layer is provided. The SOT layer is located over the substrate. The MTJ stack is located on the SOT layer. The first protection layer and the second protection layer are located on the sidewall of the MTJ stack. The first protection layer is located between the second protection layer and the MTJ stack. There is a notch between the second protection layer and the SOT layer.

Abstract: The present disclosure provides a molding system for fabricating a FRP composite article. The molding system includes a detector, a resin dispenser, a processing module, and a molding machine. The detector is configured to capture a graph of a woven fiber from a top view. The resin dispenser is configured to provide a resin to the woven fiber to form a FRP. The processing module is configured to receive the graph and a plurality of parameters of the FRP. The processing module includes a CNN model, and is configured to use the CNN model to obtain a plurality of predicted mechanical properties of the FRP according to the graph and the plurality of parameters of the FRP. The molding machine is configured to mold the FRP to fabricate the FRP composite article according to the plurality of predicted mechanical properties.

Abstract: An electronic device comprising: a clock pin; at least one data pin; a storage device, configured to store at least one program; a processing circuit, coupled to the data pin. A device ID setting method is performed when the processing circuit executes the program stored in the storage device. The device ID setting method comprises; (a) recording connections between pins of a first electronic device and pins of the electronic device by the electronic device, wherein the first electronic device comprises at least one data pin; and (b) applying the connections between the pins of the first electronic device and the pins of the electronic device as a device ID of the first electronic device by the electronic device.

Abstract: Various embodiments of the present disclosure are directed towards a semiconductor device. The semiconductor device comprises a source region and a drain region in a substrate and laterally spaced. A gate stack is over the substrate and between the source region and the drain region. The drain region includes two or more first doped regions having a first doping type in the substrate. The drain region further includes one or more second doped regions in the substrate. The first doped regions have a greater concentration of first doping type dopants than the second doped regions, and each of the second doped regions is disposed laterally between two neighboring first doped regions.

Abstract: The disclosure provides an electronic device. The electronic device includes a substrate, a transistor, and a variable capacitor. The transistor is disposed on the substrate. The variable capacitor is disposed on the substrate and adjacent to the transistor. A material of the transistor and a material of the variable capacitor both a include a III-V semiconductor material. The electronic device of an embodiment of the disclosure may simplify manufacturing process, reduce costs, or reduce dimensions.

Abstract: A semiconductor device includes a first substrate, a first chip, a second chip, and a first substrate conductive pillar. The first chip is disposed on the first substrate and has a first lateral surface. The second chip is disposed on the first chip and includes a first protrusion protruding relative to the first lateral surface. The first substrate conductive pillar connects the first protrusion with the first substrate.

Abstract: A vacuum forming method for a membrane-like object having a protruding structure and its forming apparatus, the forming method includes the following steps: fixing a flat membrane having a protruding structure on a sealing device; fixing a product model on a vacuum pumping device; clamping a transfer device on the protruding structure; utilizing a heating device to heat the flat membrane for softening the flat membrane; controlling the transfer device to move the protruding structure to a predetermined forming position; fitting the sealing device tightly to the vacuum pumping device; pumping out air between the flat membrane and the product model by the vacuum pumping device to generate negative pressure, so that the flat membrane is completely attached to a surface of the product model to form a final membrane having the protruding structure; after cooling, the final membrane having the protruding structure is taken out of the cooling room.

Abstract: Routing substrates, methods of manufacture, and electronic assemblies including routing substrates are described. In an embodiment, a routing substrate includes a plurality of metal routing layers, a plurality of dielectric layers including a top dielectric layer forming a topmost surface, and a cavity formed in the topmost surface. The cavity may include a bottom cavity surface, a first plurality of first surface mount (SMT) metal bumps embedded within the top dielectric layer and protruding from the topmost surface of the top dielectric layer, and a second plurality of second SMT metal bumps embedded within an intermediate dielectric layer of the plurality of dielectric layers and protruding from the bottom cavity surface.

Abstract: A modified polyphenylene ether resin having a structure represented by [Formula 1] is provided.

Abstract: An optical member driving mechanism for connecting an optical member is provided, including a fixed portion and a first adhesive member. The fixed portion includes a first member and a second member, wherein the first member is fixedly connected to the second member via the first adhesive member.

Abstract: A memory structure includes: first and second word lines; a high-k dielectric layer disposed on the first and second word lines; a channel layer disposed on the high-k dielectric layer and comprising a semiconductor material; first and second source electrodes electrically contacting the channel layer; a first drain electrode disposed on the channel layer between the first and second source electrodes; a memory cell electrically connected to the first drain electrode; and a bit line electrically connected to the memory cell.

Abstract: A memory device and method of making the same, the memory device including bit lines disposed on a substrate; memory cells disposed on the bit lines; a first dielectric layer disposed on the substrate, surrounding the bit lines and the memory cells; a second dielectric layer disposed on the first dielectric layer; thin film transistors (TFTs) embedded in the second dielectric layer and configured to selectively provide electric power to corresponding memory cells, the TFTs comprising drain lines disposed on the memory cells, source lines disposed on the first dielectric layer, and selector layers electrically connected to the source lines and the drain lines; and word lines disposed on the second dielectric layer and electrically connected to the TFTs.

Abstract: Source/drain silicide that improves performance and methods for fabricating such are disclosed herein. An exemplary device includes a first channel layer disposed over a substrate, a second channel layer disposed over the first channel layer, and a gate stack that surrounds the first channel layer and the second channel layer. A source/drain feature disposed adjacent the first channel layer, second channel layer, and gate stack. The source/drain feature is disposed over first facets of the first channel layer and second facets of the second channel layer. The first facets and the second facets have a (111) crystallographic orientation. An inner spacer disposed between the gate stack and the source/drain feature and between the first channel layer and the second channel layer. A silicide feature is disposed over the source/drain feature where the silicide feature extends into the source/drain feature towards the substrate to a depth of the first channel layer.

Abstract: A method performed by at least one processor includes the following steps: generating a layout of an integrated circuit (IC), the layout comprising a cell and a layout context in a vicinity of the cell; receiving from a library a set of context groups and a set of timing tables, wherein each of the context groups is associated with one of the set of timing tables; determining a representative context group for the cell through comparing the layout context of the cell with the set of context groups; and performing a timing analysis on the layout according to a representative timing table associated with the representative context group for the cell.