Patents by Inventor Chung-Hsu Wang

Chung-Hsu Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190109239
    Abstract: The invention relates to a thin-film transistor and a manufacturing method thereof. The manufacturing method of the thin-film transistor includes the following steps: an insulating layer is formed to cover a gate on a substrate; a semiconductor pattern having a first region and a second region is formed on the insulating layer; a plurality of island patterns is formed, wherein at least a portion of the plurality of island patterns is disposed on the semiconductor pattern, and the plurality of island patterns is separated from one another by a gap; and a source and a drain are formed to cover a portion of the plurality of island patterns and fill the gaps to respectively be electrically connected to the first region and the second region of the semiconductor pattern.
    Type: Application
    Filed: December 9, 2018
    Publication date: April 11, 2019
    Applicant: Chunghwa Picture Tubes, LTD.
    Inventors: Chin-Tzu Kao, Chung-Hsu Wang
  • Patent number: 10181528
    Abstract: The invention relates to a thin-film transistor and a manufacturing method thereof. The manufacturing method of the thin-film transistor includes the following steps: an insulating layer is formed to cover a gate on a substrate; a semiconductor pattern having a first region and a second region is formed on the insulating layer; a plurality of island patterns is formed, wherein at least a portion of the plurality of island patterns is disposed on the semiconductor pattern, and the plurality of island patterns is separated from one another by a gap; and a source and a drain are formed to cover a portion of the plurality of island patterns and fill the gaps to respectively be electrically connected to the first region and the second region of the semiconductor pattern.
    Type: Grant
    Filed: January 3, 2017
    Date of Patent: January 15, 2019
    Assignee: Chunghwa Picture Tubes, LTD.
    Inventors: Chin-Tzu Kao, Chung-Hsu Wang
  • Publication number: 20180175206
    Abstract: The invention relates to a thin-film transistor and a manufacturing method thereof. The manufacturing method of the thin-film transistor includes the following steps: an insulating layer is formed to cover a gate on a substrate; a semiconductor pattern having a first region and a second region is formed on the insulating layer; a plurality of island patterns is formed, wherein at least a portion of the plurality of island patterns is disposed on the semiconductor pattern, and the plurality of island patterns is separated from one another by a gap; and a source and a drain are formed to cover a portion of the plurality of island patterns and fill the gaps to respectively be electrically connected to the first region and the second region of the semiconductor pattern.
    Type: Application
    Filed: January 3, 2017
    Publication date: June 21, 2018
    Applicant: Chunghwa Picture Tubes, LTD.
    Inventors: Chin-Tzu Kao, Chung-Hsu Wang