Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked to at least partially recompose the measurement results according to the sample plan.

Abstract: A semiconductor device includes a substrate, a stack of semiconductor nanosheets, a dielectric wall, and a gate structure. The substrate includes a nanosheet mesa, and the stack of semiconductor nanosheets is disposed on the nanosheet mesa. The dielectric wall crosses through the nanosheet mesa and the stack of semiconductor nanosheets. The gate structure wraps the stack of semiconductor nanosheets and crosses over the dielectric wall, wherein a top of the dielectric wall has a recess.

Abstract: A method of determining matching performance between tools used in semiconductor manufacture and associated tools is described. The method includes obtaining a plurality of data sets related to a plurality of tools and a representation of the data sets in a reduced space having a reduced dimensionality. A matching metric and/or matching correction is determined based on matching the reduced data sets in the reduced space.

Abstract: A method for categorizing a substrate subject to a semiconductor manufacturing process including multiple operations, the method including: obtaining values of functional indicators derived from data generated during one or more of the multiple operations on the substrate, the functional indicators characterizing at least one operation; applying a decision model including one or more threshold values to the values of the functional indicators to obtain one or more categorical indicators; and assigning a category to the substrate based on the one or more categorical indicators.

Abstract: A method of determining an overlay value of a substrate, the method including: obtaining temperature data that includes data on measured temperature at one or more positions on a substrate table after a substrate has been loaded onto the substrate table; and determining an overlay value of the substrate in dependence on the obtained temperature data. There is further disclosed a method of determining a performance of a clamping by a substrate table using a determined overlay value.

Abstract: Disclosed is a method of determining calibrated reference exposure and measure grids for referencing position of a substrate stage in a lithographic system. The method comprises obtaining calibration data relating to one or more calibration substrates; and determining an exposure grid for an exposure side of the lithographic system from said calibration data and a measure grid for a measure side of the lithographic system from said calibration data. The exposure grid and said measure grid are decomposed so as to remove a calibration substrate dependent component from said exposure grid and from said measure grid to obtain a substrate independent exposure grid and substrate independent measure grid.

Abstract: A method for categorizing a substrate subject to a semiconductor manufacturing process including multiple operations, the method including: obtaining values of functional indicators derived from data generated during one or more of the multiple operations on the substrate, the functional indicators characterizing at least one operation; applying a decision model including one or more threshold values to the values of the functional indicators to obtain one or more categorical indicators; and assigning a category to the substrate based on the one or more categorical indicators.

Abstract: Disclosed is a method of determining calibrated reference exposure and measure grids for referencing position of a substrate stage in a lithographic system. The method comprises obtaining calibration data relating to one or more calibration substrates; and determining an exposure grid for an exposure side of the lithographic system from said calibration data and a measure grid for a measure side of the lithographic system from said calibration data. The exposure grid and said measure grid are decomposed so as to remove a calibration substrate dependent component from said exposure grid and from said measure grid to obtain a substrate independent exposure grid and substrate independent measure grid.

Abstract: A method of determining an overlay value of a substrate, the method including: obtaining temperature data that includes data on measured temperature at one or more positions on a substrate table after a substrate has been loaded onto the substrate table; and determining an overlay value of the substrate in dependence on the obtained temperature data. There is further disclosed a method of determining a performance of a clamping by a substrate table using a determined overlay value.

Abstract: A method for categorizing a substrate subject to a semiconductor manufacturing process including multiple operations, the method including: obtaining values of functional indicators derived from data generated during one or more of the multiple operations on the substrate, the functional indicators characterizing at least one operation; applying a decision model including one or more threshold values to the values of the functional indicators to obtain one or more categorical indicators; and assigning a category to the substrate based on the one or more categorical indicators.

Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked to at least partially recompose the measurement results according to the sample plan.

Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked to at least partially recompose the measurement results according to the sample plan.

Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked to at least partially recompose the measurement results according to the sample plan.

Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced 2506 defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used 2508 to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked 2510 to at least partially recompose the measurement results according to the sample plan.

Abstract: A method for mitigating an effect of non-uniform pellicle degradation on control of a substrate patterning process and an associated lithographic apparatus. The method includes quantifying an effect of the non-uniform pellicle degradation on one or more properties of patterned features, such as one or more metrology targets, formed on the substrate by the substrate patterning process. A process control correction is then determined based on the quantification of the effect of the non-uniform pellicle degradation.

Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced 2506 defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used 2508 to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked 2510 to at least partially recompose the measurement results according to the sample plan.

Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced 2506 defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used 2508 to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked 2510 to at least partially recompose the measurement results according to the sample plan.

Abstract: A method of production of alignment marks uses a self-aligned double patterning process. An alignment mark pattern is provided with first and second sub-segmented elements. After selecting the dipolar illumination orientation, dipole-X is used to illuminate the pattern and to image the first elements on the wafer, but not the second elements. Alternatively, dipole-Y is used to illuminate the pattern and to image the second elements on the wafer, but not the first elements. In either case, self-aligned double patterning processing may then be performed to produce product-like alignment marks with high contrast and wafer quality (WQ). Subsequently the X and Y alignment marks thus produced are used for the step of alignment in a lithographic process.