Abstract: A semiconductor device includes a first transistor and a protection structure. The first transistor includes a gate electrode, a gate dielectric disposed on the gate electrode, and a channel layer disposed on the gate dielectric. The protection structure is laterally surrounding the gate electrode, the gate dielectric and the channel layer of the first transistor. The protection structure includes a first capping layer and a dielectric portion. The first capping layer is laterally surrounding and contacting the gate electrode, the gate dielectric and the channel layer of the first transistor. The dielectric portion is disposed on the first capping layer and laterally surrounding the first transistor.

Abstract: Various embodiments of the present disclosure are directed towards a three-dimensional (3D) trench capacitor, as well as methods for forming the same. In some embodiments, a first substrate overlies a second substrate so a front side of the first substrate faces a front side of the second substrate. A first trench capacitor and a second trench capacitor extend respectively into the front sides of the first and second substrates. A plurality of wires and a plurality of vias are stacked between and electrically coupled to the first and second trench capacitors. A first through substrate via (TSV) extends through the first substrate from a back side of the first substrate, and the wires and the vias electrically couple the first TSV to the first and second trench capacitors. The first and second trench capacitors and the electrical coupling therebetween collectively define the 3D trench capacitor.

Abstract: An improved ion source assembly in an ion implant machine is provided that can withstand thermal stress and remain gas leak proof. The ion source assembly is comprised of a vaporizer with a tubular conduit at one end, a fitting, and an arc chamber. The improvement being leak-proof connections: (1) between the conduit and the fitting and (2) between the fitting and an arc chamber. The fitting has a chamber through the center. The chamber has a larger diameter at the back end than at the front end and a central tapered portion connecting the front end and back end portions. The conduit is fit into the back end of the chamber thereby forming a first gas leak proof connection. The fitting has an outer tapered from end portion and the arc chamber has a tapered opening. The tapered front end of the fitting engages the tapered opening of the arc chamber forming a second gas leak proof connection thereby providing a gas leak proof ion source assembly.

Abstract: An improved shutter activating mechanism for an ion implantation apparatus, used to implant ions into semiconductor wafers, is described. The apparatus has an ion source, an ion accelerator, an ion beam shutter, and an ion beam shaping plate system. The improvement consists of a improved shutter activating mechanism with a rotatable shaft fixed to the ion beam shutter, a cross bar fed to the rotatable shaft, a abutment surface for limiting rotational movement of the cross bar, and a driving solenoid provided with a push rod. A bifurcated element is fixed to the end of the push rod which has aligned transverse apertures, a link joining the bifurcated element and the push rod, the link having an aperture on one end, a bearing assembly to allow limited axial movement, an a first pin through the transverse aperture and the bearing assembly. The link has a bifurcated end with transverse aperture. A second pin provides a connection between the bifurcated end of the link and the cross bar.