Patents by Inventor Chung Huang

Chung Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12377080
    Abstract: The disclosure relates to a compound of Formula (I), which acts as an allosteric inhibitor of epidermal growth factor receptor (EGFR); pharmaceutical compositions comprising the compound; and methods of treating or preventing kinase-mediated disorders, including cancer and other proliferation diseases.
    Type: Grant
    Filed: June 19, 2020
    Date of Patent: August 5, 2025
    Assignee: Dana-Farber Cancer Institute, Inc.
    Inventors: Courtney A. Cullis, Krista E. Gipson, Yongbo Hu, Shih-Chung Huang, Nathanael S. Gray, David A. Scott, Thomas Gero, David Heppner, Tyler Beyett, Ciric To, Michael Eck
  • Publication number: 20250214879
    Abstract: A method of converting waste into energy is provided. The method includes the following steps: (a) providing a lipid-containing substrate to react with a biocatalyst to produce a surfactant molecular liquid; (b) pretreating an organic waste with the surfactant molecular liquid to produce a first organic liquid; (c) subjecting the first organic liquid to an ultrasonic treatment to produce a second organic liquid; and (d) subjecting the second organic liquid to an anaerobic biological treatment for conversion to methane. The biocatalyst includes at least one lipase. Moreover, the surfactant molecular liquid includes at least one of monoglyceride and diglyceride. A waste treatment system for converting waste into energy is also provided.
    Type: Application
    Filed: June 12, 2024
    Publication date: July 3, 2025
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Jia-Hung WANG, Cheng-Chung HUANG, Shing-Der CHEN, Laurensia IRMAYANI, Li-Ching CHUNG, Rui-Cong SUN, Wang-Kuan CHANG
  • Patent number: 12345584
    Abstract: A pressure sensor includes a substrate, a pressure sensing element, a first signal line, a second signal line, an elastomer, and an opposite substrate. The pressure sensing element includes first and second resistors connected in series, a third and fourth resistors connected in series, a first switch component, and a second switch component. The first and second resistors are connected in parallel to the third and fourth resistors. The first switch component is electrically connected between the first and second resistors. The second switch component is electrically connected between the third and fourth resistors. The first to fourth resistors at least partially overlap with a cavity of the elastomer, which can increase the stress on the first to fourth resistors when the pressure sensor is under pressure, thereby improving the sensitivity of the pressure sensor.
    Type: Grant
    Filed: December 28, 2022
    Date of Patent: July 1, 2025
    Assignee: AUO Corporation
    Inventors: Yi-Han Chang, Chung-Chin Huang, Wen-Yuan Li, Wen-Chung Huang
  • Patent number: 12343118
    Abstract: A neurovascular age prediction system based on white matter and a method thereof are disclosed. An analysis device generates an individual space periventricular area mask and an individual space deep white matter mask by nonlinear space counterpoint technology and MNI152 brain template, and reversely transforms individual coordinates into a transition matrix, performs white matter hyperintensity (WMH) signal image processing on the T1 weighted image and the T2 fluid attenuated inversion recovery (FLAIR) image to generate a T1 weighted WMH signal image and a T2 FLAIR WMH signal image, then converts the Ti WMH signal image and the T2 FLAIR WMH signal image into logarithms of a periventricular white matter volume and a deep WMH volume based on the individual space periventricular area mask and the individual space deep white matter mask, and substitutes the logarithms into a neurovascular age prediction model to obtain a neurovascular age prediction result.
    Type: Grant
    Filed: August 5, 2022
    Date of Patent: July 1, 2025
    Assignee: MiTech.ai Co., Ltd.
    Inventors: Chu-Chung Huang, Ching-Po Lin
  • Publication number: 20250189695
    Abstract: An image sensor module has a light path, and includes an image sensor, a reflecting element, an optical multilayer deposition structure layer and a nano-rough surface. The image sensor corresponds to the light path. The reflecting element faces towards and is adjacent to the image sensor, and the reflecting element is configured to fold the light path. The optical multilayer deposition structure layer is farther away from the image sensor than the reflecting element away from the image sensor along the light path. The nano-rough surface is disposed on one side of the image sensor facing towards the reflecting element, and the nano-rough surface includes a plurality of nano-protruding structures. Shapes of the nano-protruding structures are irregular, and the nano-protruding structures are arranged adjacent to each other.
    Type: Application
    Filed: December 1, 2024
    Publication date: June 12, 2025
    Inventors: Tzu-Kan CHEN, Ti Lun LIU, Jih Chung HUANG, Yu-Pin WANG, Yu-Chen LAI, Ming-Ta CHOU, Pei-Chi CHANG
  • Publication number: 20250176251
    Abstract: A semiconductor device includes a plurality of channel layers vertically separated from one another. The semiconductor device also includes an active gate structure comprising a lower portion and an upper portion. The lower portion wraps around each of the plurality of channel layers. The semiconductor device further includes a gate spacer extending along a sidewall of the upper portion of the active gate structure. The gate spacer has a bottom surface. Moreover, a dummy gate dielectric layer is disposed between the gate spacer and a topmost channel layer of plurality of channel layers. The dummy gate dielectric layer is in contact with a top surface of the topmost channel layer, the bottom surface of the gate spacer, and the sidewall of the gate structure.
    Type: Application
    Filed: January 27, 2025
    Publication date: May 29, 2025
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuei-Yu Kao, Chen-Yui Yang, Hsien-Chung Huang, Chao-Cheng Chen, Shih-Yao Lin, Chih-Chung Chiu, Chih-Han Lin, Chen-Ping Chen, Ke-Chia Tseng, Ming-Ching Chang
  • Patent number: 12317751
    Abstract: An integrated circuit includes a metallization pattern having first and second conductive features, an etch stop layer over the metallization pattern, a memory device, a bottom electrode via, a third conductive feature, and a dielectric feature. The etch stop layer has first and second portions over the first and second conductive features, respectively. The bottom electrode via is in the first portion of the etch stop layer and electrically connecting the memory device over the first portion of the etch stop layer to the first conductive feature. The third conductive feature is in the second portion of the etch stop layer and electrically connected to the second conductive feature. The dielectric feature is between the first and second portions of the etch stop layer and in contact with sidewalls of the first and second portions of the etch stop layer.
    Type: Grant
    Filed: July 28, 2023
    Date of Patent: May 27, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tai-Yen Peng, Chien-Chung Huang, Yu-Shu Chen, Sin-Yi Yang, Chen-Jung Wang, Han-Ting Lin, Chih-Yuan Ting, Jyu-Horng Shieh, Hui-Hsien Wei
  • Patent number: 12315809
    Abstract: A structure includes a first conductive feature in a first dielectric layer; a second dielectric layer over the first dielectric layer; and a second conductive feature extending through the second dielectric layer to physically contact the first conductive feature, wherein the second conductive feature includes a metal adhesion layer over and physically contacting the first conductive feature; a barrier layer extending along sidewalls of the second dielectric layer; and a conductive filling material extending over the metal adhesion layer and the barrier layer, wherein a portion of the conductive filling material extends between the barrier layer and the metal adhesion layer.
    Type: Grant
    Filed: July 25, 2023
    Date of Patent: May 27, 2025
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chia-Pang Kuo, Chih-Yi Chang, Ming-Hsiao Hsieh, Wei-Hsiang Chan, Ya-Lien Lee, Chien Chung Huang, Chun-Chieh Lin, Hung-Wen Su
  • Publication number: 20250166373
    Abstract: The present invention discloses a method for optimizing first data from an image set of an object observed in an observation apparatus by reconfiguring at least one parameter of the observation apparatus; the observation apparatus comprises an image sensor above a water surface; the image set of the object is captured by the image sensor. The method comprises: detecting, by a processing unit, a predetermined event based on second data, wherein the second data is associated with the image set of the object; and determining, by the processing unit, an execution of an instruction based on the predetermined event, wherein the instruction comprises a reconfiguration message which reconfigures the at least one parameter of the observation apparatus corresponding to the execution of the instruction.
    Type: Application
    Filed: July 10, 2024
    Publication date: May 22, 2025
    Inventors: HUA TU, Hsuan-Chung HUANG, HAN-TSUNG PAN, WAN-ZHOU YU
  • Patent number: 12293740
    Abstract: An electronic device may include a lenticular display. The lenticular display may have a lenticular lens film formed over an array of pixels. A plurality of lenticular lenses may extend across the length of the display. The lenticular lenses may be configured to enable stereoscopic viewing of the display such that a viewer perceives three-dimensional images. Crosstalk between viewing zones and disparity between images received from different viewing zones may result in disparity-caused shifts in images perceived by viewer of the lenticular display. To mitigate these disparity-caused shifts, compensation circuitry may be included in the display pipeline circuitry. The compensation circuitry may include stored disparity-caused shift calibration information that is used for the compensation. The stored disparity-caused shift calibration information may be a polynomial function that outputs a magnitude of disparity-caused shift for a given pixel location.
    Type: Grant
    Filed: November 30, 2022
    Date of Patent: May 6, 2025
    Assignee: Apple Inc.
    Inventors: Ping-Yen Chou, ByoungSuk Kim, Fu-Chung Huang, Hao Chen, Juan He, Jun Qi, Mingming Wang, Sheng Zhang, Yang Li, Yi Huang, Yi-Pai Huang, Yunhui Hou
  • Publication number: 20250133967
    Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.
    Type: Application
    Filed: December 24, 2024
    Publication date: April 24, 2025
    Inventors: Tai-Yen Peng, Yu-Shu Chen, Sin-Yi Yang, Chen-Jung Wang, Chien Chung Huang, Han-Ting Lin, Jyu-Horng Shieh, Qiang Fu
  • Publication number: 20250116937
    Abstract: A lithography method includes the steps which are mentioned below. A photoresist layer is formed over a substrate. The photoresist layer is exposed. The photoresist layer is developed. A vacuum treatment is performed to the photoresist layer. The substrate is etched by using the photoresist layer as an etch mask.
    Type: Application
    Filed: October 4, 2023
    Publication date: April 10, 2025
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ming-Hui WENG, Wei-Han LAI, Hsien-Chung HUANG, Ching-Yu CHANG
  • Publication number: 20250092941
    Abstract: A transmission device includes a base body and a plurality of driving modules disposed in the base body. Each driving module includes a first transmission set, a linking member, a second transmission set, a third transmission set, a gear set, and a driving motor. The first transmission set includes a slide rail and a slide block. The slide block is fixed on the base body. The linking member is fixed on the slide rail and has a slide shaft. The second transmission set includes a screw rod and a nut, and the nut is fixed on the slide rail. The third transmission set includes a worm rod and a worm gear meshed with the worm rod. The gear set is connected to the worm rod. The driving motor has a driving shaft connected to the gear set.
    Type: Application
    Filed: January 31, 2024
    Publication date: March 20, 2025
    Inventors: KUN-PIN HUANG, CHENG-CHUNG HUANG
  • Publication number: 20250093745
    Abstract: An image sensor module includes a sensing surface, a filter element and a first anti-reflective microstructure, wherein the filter element faces towards the sensing surface, and the first anti-reflective microstructure is disposed on the sensing surface. The filter element includes a substrate, an optical deposition layer structure and an optical coating layer, wherein the optical deposition layer structure is disposed on a side of the substrate away from the sensing surface, and the optical coating layer and the optical deposition layer structure are correspondingly disposed on a side of the substrate facing towards the sensing surface. The optical deposition layer structure is multilayer. An air layer is formed between the first anti-reflective microstructure and the filter element, and the first anti-reflective microstructure and the air layer partially overlap at a direction vertical to the sensing surface.
    Type: Application
    Filed: August 26, 2024
    Publication date: March 20, 2025
    Inventors: Tzu-Kan CHEN, Ti Lun LIU, Jih Chung HUANG, Yu-Pin WANG, Yu-Chen LAI, Ming-Ta CHOU
  • Patent number: 12253146
    Abstract: A transmission device includes a base body and a plurality of driving modules disposed in the base body. Each driving module includes a first transmission set, a linking member, a second transmission set, a third transmission set, a gear set, and a driving motor. The first transmission set includes a slide rail and a slide block. The slide block is fixed on the base body. The linking member is fixed on the slide rail and has a slide shaft. The second transmission set includes a screw rod and a nut, and the nut is fixed on the slide rail. The third transmission set includes a worm rod and a worm gear meshed with the worm rod. The gear set is connected to the worm rod. The driving motor has a driving shaft connected to the gear set.
    Type: Grant
    Filed: January 31, 2024
    Date of Patent: March 18, 2025
    Assignee: Point Robotics Medtech Inc.
    Inventors: Kun-Pin Huang, Cheng-Chung Huang
  • Patent number: 12244079
    Abstract: A solderless antenna includes a pair of spaced-apart electrically-conductive disks arranged in a vertical stack and a self-supporting, branched-path feed circuit. The feed circuit has a signal-receiving point and four signal paths leading to four excitation points. The first signal path is the shortest. The second signal path includes a portion of the first signal path and is longer than the first signal path. The third signal path is unique with respect to the first signal path and second signal path, and is longer than the second signal path. The fourth signal path includes a portion of the third signal path and is longer than the third signal path.
    Type: Grant
    Filed: September 9, 2022
    Date of Patent: March 4, 2025
    Assignee: United States of America as represented by the Administrator of NASA
    Inventors: Justin Long, Victor Marrero-Fontanez, Wei-Chung Huang, Cornelis Du Toit
  • Publication number: 20250058234
    Abstract: One object is to fully bring out attractiveness of competitive livestreams. A server includes a circuitry configured to: receive, from a first livestreamer terminal, first operation information of a first game generated based on input by a first livestreamer delivering a first livestream; receive, from a second livestreamer terminal, second operation information of a second game generated based on input by a second livestreamer delivering a second livestream; progress the first and second games based on the first and second operation information; transmit video data of the first and second livestreams and data of the first and second games together to a first viewer terminal of a first viewer of the first livestream and a second viewer terminal of a second viewer of the second livestream; receive a signal indicating use of a gift by the first viewer; and perform processing to negatively impact the second game.
    Type: Application
    Filed: February 13, 2024
    Publication date: February 20, 2025
    Inventors: Yun-An LIN, Te-Chung HUANG
  • Patent number: 12230545
    Abstract: A semiconductor device includes a plurality of channel layers vertically separated from one another. The semiconductor device also includes an active gate structure comprising a lower portion and an upper portion. The lower portion wraps around each of the plurality of channel layers. The semiconductor device further includes a gate spacer extending along a sidewall of the upper portion of the active gate structure. The gate spacer has a bottom surface. Moreover, a dummy gate dielectric layer is disposed between the gate spacer and a topmost channel layer of plurality of channel layers. The dummy gate dielectric layer is in contact with a top surface of the topmost channel layer, the bottom surface of the gate spacer, and the sidewall of the gate structure.
    Type: Grant
    Filed: November 30, 2023
    Date of Patent: February 18, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Kuei-Yu Kao, Chen-Yui Yang, Hsien-Chung Huang, Chao-Cheng Chen, Shih-Yao Lin, Chih-Chung Chiu, Chih-Han Lin, Chen-Ping Chen, Ke-Chia Tseng, Ming-Ching Chang
  • Patent number: D1084820
    Type: Grant
    Filed: November 27, 2023
    Date of Patent: July 22, 2025
    Assignee: TONG LUNG METAL INDUSTRY CO., LTD.
    Inventors: Tsung-Chung Huang, Chun-Yi Fang
  • Patent number: D1077611
    Type: Grant
    Filed: October 22, 2023
    Date of Patent: June 3, 2025
    Assignee: HO CHENG GARDEN TOOLS CO., LTD.
    Inventor: Yao-Chung Huang