Abstract: A fault detection method, includes the following steps. A target sequence is received, the target sequence includes several data. A first moving average operation is performed on the target sequence to establish a first moving average sequence. A second moving average operation is performed on the target sequence to establish a second moving average sequence. A difference operation between the first moving average sequence and the second moving average sequence is performed to obtain a difference sequence, the difference sequence includes several difference values. An upper limit value is set. When one of the difference values is greater than the upper limit value, the target sequence is determines as abnormal.

Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a first active region extending along a first direction. The semiconductor device also includes a second active region extending along the first direction. The semiconductor device further includes a first gate extending along a second direction perpendicular to the first direction. The first gate has a first segment disposed between the first active region and the second active region. In addition, the semiconductor device includes a first electrical conductor extending along the second direction and across the first active region and the second active region, wherein the first segment of the first gate and the first electrical conductor are partially overlapped to form a first capacitor.

Abstract: Example implementations relate to computing device locations and computing devices having audio components thereon that change operational states. In some examples, a non-transitory computer-readable storage medium can include instructions that when executed cause a processor of an electronic device to determine a default host computing device of a plurality of computing devices, request a location of a first computing device of the plurality of computing devices using a sensor of the default host computing device, and request a location of a second computing device of the plurality of computing devices using the sensor. The instructions when executed can cause the processor to determine a first audio loop potential associated with the first computing device and a second audio loop potential associated with the second computing device, assign the first computing device as an active client and assign the second computing device as an inactive client.

Abstract: A micro light emitting device includes an epitaxial structure, a conductive layer, and a first insulating layer. The epitaxial structure has a first surface and a second surface opposite to the first surface, and includes a first semiconductor layer, an active layer and a second semiconductor layer that are arranged in such order in a direction from the first surface to the second surface. The conductive layer is formed on a surface of the first semiconductor layer away from the active layer. The first insulating layer is formed on the surface of the first semiconductor layer away from the active layer, and exposes at least a part of the conductive layer.

Abstract: A method of manufacturing a semiconductor structure includes forming an active region having a first portion which is doped. The method further includes forming a first silicide layer over and electrically coupled to the first portion of the active region. The method further includes forming a second silicide layer under and electrically coupled to the first portion of the active region. The method further includes forming a first metal-to-drain/source (MD) contact structure over and electrically coupled to the first silicide layer. The method further includes forming a first via-to-MD (VD) structure over and electrically coupled to the MD contact structure. The method further includes forming a buried via-to-source/drain (BVD) structure under and electrically coupled to the second silicide layer.

Abstract: A connective tissue repair device (10) includes a central hub member (12) formed with an aperture, and first and second anchoring members (14, 16) that extend from opposing sides of the central hub member (12). The first and second anchoring members (14, 16) each have a depth that extends between edges, one of the edges being sharp for pushing into tissue.

Abstract: A process for determining the type of a diamond having spin properties and physical properties, said process including the steps of: (i) determining the spin properties of a diamond of unknown type, using optically detected magnetic resonance to measure the spin properties of said diamond of an unknown type, wherein the spin properties are indicative of the physical properties of the diamond; (ii) comparing the spin properties of said unknown diamond with the spin properties of a plurality of diamonds of known types; and (iii) determining the type of said diamond of unknown type upon a predetermined threshold of correlation between the spin properties of said diamond of unknown type with the spin properties of a diamond of known type of said plurality of diamonds known types.

Abstract: A semiconductor device includes a first conductive line extending in a first direction on a front side of a semiconductor wafer, a first power rail extending in the first direction on a back side of the semiconductor wafer, and a first transistor including a first gate structure extending in a second direction perpendicular to the first direction, first and second active regions adjacent to the first gate structure, and a first channel region extending between the first and second active regions through the first gate structure. A first via is positioned between and electrically connects the first active region and the first conductive line, and a second via is positioned between and electrically connects the second active region and the first power rail.

Abstract: In one example in accordance with the present disclosure, an electronic device is described. The electronic device includes a wireless controller. The wireless controller is to establish a first wireless connection between the electronic device and a peripheral device to receive a unique identifier for a second electronic device. The wireless controller is also to establish, based on the unique identifier for the second electronic device, a second wireless connection between the electronic device and the second electronic device. The electronic device includes a wireless transceiver to wirelessly transfer data to the second electronic device through the second wireless connection.

Abstract: A semiconductor structure includes a die and a first connector. The first connector is disposed on the die. The first connector includes a first connecting housing, a first connecting element and a first connecting portion. The first connecting element is electrically connected to the die and disposed at a first side of the first connecting housing. The first connecting portion is disposed at a second side different from the first side of the first connecting housing, wherein the first connecting portion is one of a hole and a protrusion with respect to a surface of the second side of the first connecting housing.

Abstract: A digital printing system incorporating in-track position corrections includes one or more printing subsystems, a data processing system; and a digital memory for storing a representation of an in-track position correction function, wherein the in-track position correction function is a non-linear function that specifies in-track position corrections to be applied as a function of cross-track position, and wherein the representation of the in-track position correction function includes the cross-track positions and transition direction of transitions in the in-track position correction function.

Abstract: A digital printing system incorporating in-track position corrections includes one or more printing subsystems, a data processing system; and a digital memory for storing a representation of an in-track position correction function, wherein the in-track position correction function is a non-linear function that specifies in-track position corrections to be applied as a function of cross-track position, and wherein the representation of the in-track position correction function includes the cross-track positions and transition direction of transitions in the in-track position correction function.

Abstract: A method of forming an inductor including forming a first redistribution structure on a substrate, forming a first conductive via over and electrically connected to the first redistribution structure, depositing a first magnetic material over a top surface and sidewalls of the first conductive via, coupling a first die and a second die to the first redistribution structure, encapsulating the first die, the second die, and the first conductive via in an encapsulant, and planarizing the encapsulant and the first magnetic material to expose the top surface of the first conductive via while a remaining portion of the first magnetic material remains on sidewalls of the first conductive via, where the first conductive via and the remaining portion of the first magnetic material provide an inductor.

Abstract: An integrated circuit (IC) structure includes a semiconductor substrate, a bottom electrode routing, a capacitor structure, a top electrode routing. The bottom electrode routing is over the semiconductor substrate. The capacitor structure is over the bottom electrode routing. The capacitor structure includes a bottom metal layer, a middle metal layer above the bottom metal layer, and a top metal layer above the middle metal layer. When viewed in a plan view, the top metal layer has opposite straight edges extending along a first direction and opposite square wave-shaped edges connecting the opposite straight edges, the square wave-shaped edges each comprise alternating first and second segments extending along a second direction perpendicular to the first direction, and third segments each connecting adjacent two of the first and second segments, wherein the third segments extend along the first direction.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a resistive element over the substrate. The semiconductor device structure also includes a thermal conductive element over the substrate. A direct projection of the thermal conductive element on a main surface of the resistive element extends across a portion of a first imaginary line and a portion of a second imaginary line of the main surface. The first imaginary line is perpendicular to the second imaginary line, and the first imaginary line and the second imaginary line intersect at a center of the main surface.

Abstract: A process for determining the type of a diamond having spin properties and physical properties, said process including the steps of: (i) determining the spin properties of a diamond of unknown type, using optically detected magnetic resonance to measure the spin properties of said diamond of an unknown type, wherein the spin properties are indicative of the physical properties of the diamond; (ii) comparing the spin properties of said unknown diamond with the spin properties of a plurality of diamonds of known types; and (iii) determining the type of said diamond of unknown type upon a predetermined threshold of correlation between the spin properties of said diamond of unknown type with the spin properties of a diamond of known type of said plurality of diamonds known types.

Abstract: A battery module for use in a battery system is operable in a bottom mode, a top mode or a middle mode during an enabled state. The battery module includes a battery unit and a battery control circuit. The battery unit which includes at least one battery generates a battery unit voltage between a positive terminal and a negative terminal of the battery unit. The battery control circuit is powered by the battery unit voltage and is configured to control the battery unit. The battery control circuit includes an enable terminal, an upstream input terminal, an upstream output terminal, a downstream input terminal, and a downstream output terminal. When the enable terminal is at an operation enabling level, or when the upstream input terminal is at an upstream enabling level, the battery module enters the enabled state.

Abstract: An integrated circuit (IC) structure includes a semiconductor substrate, a bottom electrode routing, a capacitor structure, a top electrode routing. The bottom electrode routing is over the semiconductor substrate. The capacitor structure is over the bottom electrode routing. The capacitor structure includes a bottom metal layer, a middle metal layer above the bottom metal layer, and a top metal layer above the middle metal layer. When viewed in a plan view, the top metal layer has opposite straight edges extending along a first direction and opposite square wave-shaped edges connecting the opposite straight edges, the square wave-shaped edges each comprise alternating first and second segments extending along a second direction perpendicular to the first direction, and third segments each connecting adjacent two of the first and second segments, wherein the third segments extend along the first direction.