Abstract: A method and apparatus for simultaneously acquiring a super-resolution image and a high-speed widefield image are disclosed. The image acquisition method includes receiving a first image signal from an optical microscope, generating, by using the first image signal, a first plurality of entire images, distinguishing, based on movements of a plurality of objects included in the first plurality of entire images, a dynamic region with respect to the first plurality of entire images and a static region with respect to the first plurality of entire images, and controlling the optical microscope so as to respectively irradiate lights having different amplitudes onto the dynamic region and the static region.

Abstract: A method and apparatus for simultaneously acquiring a super-resolution image and a high-speed widefield image are disclosed. The image acquisition method includes receiving a first image signal from an optical microscope, generating, by using the first image signal, a first plurality of entire images, distinguishing, based on movements of a plurality of objects included in the first plurality of entire images, a dynamic region with respect to the first plurality of entire images and a static region with respect to the first plurality of entire images, and controlling the optical microscope so as to respectively irradiate lights having different amplitudes onto the dynamic region and the static region.

Abstract: A system to and method of monitoring a condition of a process tool. The system monitors a condition of a process tool to correctly detect a faulty operation or malfunction of the process tool. The system to monitor the condition of the process tool includes a first model storage unit to store one or more good models generated by data associated with the process tool, a second model storage unit to store one or more faulty models generated by the data associated with the process tool, a model selector to receive tool data from the process tool, and to select one of the good models and one of the faulty models in association with the received tool data, and an error detector to receive process data from the process tool, to compare the received process data with the good and faulty models selected by the model selector, and to estimate a condition of the process tool.

Abstract: A polarity exchanger and ion implanter include a stripping canal for passing an ion beam therethrough, a gas supply unit for providing a stripping gas into the stripping canal to change a polarity of the ion beam, a gas circulation unit for circulating the stripping gas, a flow meter for measuring a flow rate of the stripping gas, an ammeter for measuring a driving current applied to the gas circulation unit for operating the gas circulation unit, and a monitoring unit for generating a control signal to control a process for changing the polarity of the ion beam in accordance with the measured flow rate of the stripping gas and the measured driving current. The polarity exchanger and ion implanter having the polarity exchanger may prevent generation of metallic contaminants caused by a flow rate variation of the stripping gas or deterioration of a component of the gas circulation unit.

Abstract: A method and an apparatus for measuring an inclination angle of an ion beam when ions are implanted into a semiconductor wafer include an ion current measuring section having a Faraday cup assembly which is rotatably installed, an angle varying section for adjusting an alignment angle of the Faraday cup assembly, and an inclination angle measuring section for measuring the inclination angle of the ion beam based on a variation of the ion current caused by a variation of the alignment angle of the Faraday cup assembly. By measuring the inclination angle of the ion beam, the incident angle of the ion beam, which is incident into the wafer during the ion implantation process, can be precisely adjusted to a predetermined critical angle. Accordingly, the channeling effect and shadow effect can be effectively prevented. The amount of the ions included in the ion beam can be precisely measured, so the amount of ions implanted into the wafer can be precisely adjusted.

Abstract: Chemical vapor deposition (CVD) processing equipment for use in fabricating a semiconductor device requiring deposition of an insulation layer or a metal layer includes a chamber having an exhaust line in a lower central portion thereof, a heater block for supporting a wafer to be supplied in an interior of the chamber, the heater block having a heating plate in an interior thereof, a support shaft for supporting the heater block, and an electrical wire for providing an electrical connection to the heating plate. The support shaft extends through a bottom of the chamber. The electrical wire extends through the bottom of the chamber within the support shaft.

Abstract: A polarity exchanger and ion implanter include a stripping canal for passing an ion beam therethrough, a gas supply unit for providing a stripping gas into the stripping canal to change a polarity of the ion beam, a gas circulation unit for circulating the stripping gas, a flow meter for measuring a flow rate of the stripping gas, an ammeter for measuring a driving current applied to the gas circulation unit for operating the gas circulation unit, and a monitoring unit for generating a control signal to control a process for changing the polarity of the ion beam in accordance with the measured flow rate of the stripping gas and the measured driving current. The polarity exchanger and ion implanter having the polarity exchanger may prevent generation of metallic contaminants caused by a flow rate variation of the stripping gas or deterioration of a component of the gas circulation unit.

Abstract: A heater assembly of a semiconductor device manufacturing apparatus minimizes a temperature difference between a peripheral portion and a central portion of the wafer being processed in the apparatus. The heater assembly includes a unitary resistive heating member in the form of a disc, heat blocks that divide the peripheral portion and central portion of the upper surface of the disc into respective heating sections, a support for supporting the heating member, and an electric power source for supplying electric current to the unitary heating member. The widths of the heating sections become greater towards the center of the heater, and thus the electrical resistance of the heater also increases in a direction towards the center of the heater. The power source for the heater includes a lead that extends from the bottom surface of the heater to a bottom portion of the heater support.

Abstract: A method and an apparatus for measuring an inclination angle of an ion beam when ions are implanted into a semiconductor wafer include an ion current measuring section having a Faraday cup assembly which is rotatably installed, an angle varying section for adjusting an alignment angle of the Faraday cup assembly, and an inclination angle measuring section for measuring the inclination angle of the ion beam based on a variation of the ion current caused by a variation of the alignment angle of the Faraday cup assembly. By measuring the inclination angle of the ion beam, the incident angle of the ion beam, which is incident into the wafer during the ion implantation process, can be precisely adjusted to a predetermined critical angle. Accordingly, the channeling effect and shadow effect can be effectively prevented. The amount of the ions included in the ion beam can be precisely measured, so the amount of ions implanted into the wafer can be precisely adjusted.

Abstract: A heater assembly of a semiconductor device manufacturing apparatus minimizes a temperature difference between a peripheral portion and a central portion of the wafer being processed in the apparatus. The heater assembly includes a unitary resistive heating member in the form of a disc, heat blocks that divide the peripheral portion and central portion of the upper surface of the disc into respective heating sections, a support for supporting the heating member, and an electric power source for supplying electric current to the unitary heating member. The widths of the heating sections become greater towards the center of the heater, and thus the electrical resistance of the heater also increases in a direction towards the center of the heater. As a result, more heat is generated at the peripheral portion of the heater than at the central portion of the heater. The power source for the heater includes a lead that extends from the bottom surface of the heater to a bottom portion of the heater support.