Abstract: According to an exemplary embodiment, a substrate having a first area and a second area is provided. The substrate includes a plurality of pads. Each of the pads has a pad size. The pad size in the first area is larger than the pad size in the second area.

Abstract: In accordance with some embodiments, a package-on-package (PoP) structure includes a first semiconductor package having a first side and a second side opposing the first side, a second semiconductor package having a first side and a second side opposing the first side, and a plurality of inter-package connector coupled between the first side of the first semiconductor package and the first side of the second semiconductor package. The PoP structure further includes a first molding material on the second side of the first semiconductor package. The second side of the second semiconductor package is substantially free of the first molding material.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first source/drain structure and a second source/drain structure over and in a substrate. The method includes forming a first gate stack, a second gate stack, a third gate stack, and a fourth gate stack over the substrate. Each of the first gate stack or the second gate stack is wider than each of the third gate stack or the fourth gate stack. The method includes forming a first contact structure and a second contact structure over the first source/drain structure and the second source/drain structure respectively. A first average width of the first contact structure is substantially equal to a second average width of the second contact structure.

Abstract: A method for controlling a fan in a fan start-up stage including a first time period and a second time period comprises the following steps of: during the first time period, continuously providing a first driving signal to drive the fan; and during the second time period, continuously providing a second driving signal to drive the fan; wherein, the signal value of the first driving signal gradually decreases until being equal to the signal value of the second driving signal. Wherein the signal value of the first driving signal non-linearly decreases, the signal value of the second driving signal is an unchanged value. Wherein, the first time period and the second time period are adjusted for a different fan but the sum of the first time period and the second time period is always the same. A fan is also disclosed.

Abstract: In an embodiment, a device includes: an integrated circuit die; an encapsulant at least partially surrounding the integrated circuit die, the encapsulant including fillers having an average diameter; a through via extending through the encapsulant, the through via having a lower portion of a constant width and an upper portion of a continuously decreasing width, a thickness of the upper portion being greater than the average diameter of the fillers; and a redistribution structure including: a dielectric layer on the through via, the encapsulant, and the integrated circuit die; and a metallization pattern having a via portion extending through the dielectric layer and a line portion extending along the dielectric layer, the metallization pattern being electrically coupled to the through via and the integrated circuit die.

Abstract: A partitioning method for partitioning a group of power-ground (PG) cells is disclosed. The method includes: placing at least one out-boundary PG cell on a substrate, wherein power strips of the at least one out-boundary PG cell are aligned with corresponding power rails on the substrate; and placing at least one in-boundary PG cell on the substrate, wherein power strips of the at least one in-boundary PG cell are aligned with corresponding power rails on the substrate.

Abstract: A supported metallocene catalyst includes a carrier and a metallocene component. The carrier includes an inorganic oxide particle and an alkyl aluminoxane material. The inorganic oxide particle includes at least one inorganic oxide compound selected from the group consisting of an oxide of Group 3A and an oxide of Group 4A. The alkyl aluminoxane material includes an alkyl aluminoxane compound and an alkyl aluminum compound that is present in amount ranging from greater than 0.01 wt % to less than 14 wt % base on 100 wt % of the alkyl aluminoxane material. The metallocene component is supported on the carrier, and includes one of a metallocene compound containing a metal from Group 3B, a metallocene compound containing a metal from Group 4B, and a combination thereof. A method for preparing the supported metallocene catalyst and a method for preparing polyolefin using the supported metallocene catalyst are also disclosed.

Abstract: Various embodiments of the present disclosure are directed towards a semiconductor processing system including an overlay (OVL) shift measurement device. The OVL shift measurement device is configured to determine an OVL shift between a first wafer and a second wafer, where the second wafer overlies the first wafer. A photolithography device is configured to perform one or more photolithography processes on the second wafer. A controller is configured to perform an alignment process on the photolithography device according to the determined OVL shift. The photolithography device performs the one or more photolithography processes based on the OVL shift.

Abstract: The present disclosure provides a method for removing particles. The method includes: receiving a pellicle including a pellicle membrane, wherein a particle is disposed on the pellicle membrane; passing a light beam through an object lens, wherein the light beam is focused on a focal region in front of the pellicle membrane by the object lens, and the particle is attracted to be trapped at the focal region; and removing the particle from the pellicle membrane at the focal region.

Abstract: A method for removing particles includes receiving a pellicle including a pellicle membrane, a pellicle frame and at least a particle disposed on the pellicle membrane, generating light beams to form an optical trap extending in a direction perpendicular to the pellicle membrane, and removing the particle from the pellicle membrane by the optical trap.

Abstract: A method for cleaning a reflective photomask, a method of manufacturing a semiconductor structure, and a system for forming a semiconductor structure are provided. The method for cleaning a reflective photomask includes placing a photomask in a first chamber, and performing a dry cleaning operation on the photomask in the first chamber, wherein the dry cleaning operation includes providing hydrogen radicals to the first chamber, generating hydrocarbon gases as a result of reactions of the hydrogen radicals, and removing the hydrocarbon gases from the first chamber.

Abstract: A method for cleaning a reflective photomask, a method of manufacturing a semiconductor structure, and a system for forming a semiconductor structure are provided. The method for cleaning a reflective photomask includes placing a photomask in a first chamber, and performing a dry cleaning operation on the photomask in the first chamber, wherein the dry cleaning operation includes providing hydrogen radicals to the first chamber, generating hydrocarbon gases as a result of reactions of the hydrogen radicals, and removing the hydrocarbon gases from the first chamber.

Abstract: A reticle pod is provided. The reticle pod includes a container and a fluid regulating module mounted to the container. The fluid regulating module includes a first cap, a second cap and a sealing film. The first cap and the second cap are connected to each other. A flowing path is formed between the first cap and the second cap for allowing a fluid passing through the fluid regulating module. The sealing film is positioned between the first cap and the second cap and configured for regulating a flow of the fluid passing through the flowing path.

Abstract: A method is provided. The method includes detaching an upper shell of a reticle pod from a base. The method further includes while the upper shell is detached from the base, blocking an inlet flow of gas from entering an interior of the reticle pod between the upper shell and the base with a use of a fluid regulating module which is in a sealed state. In the sealed state of the fluid regulating module, an opening of the fluid regulating module is covered with a sealing film. The method also includes removing a reticle positioned on the base to a process tool. In addition, the method includes performing a lithography operation in the process tool with the use of the reticle.

Abstract: A cleaning apparatus for cleaning a surface of a photomask includes a housing defining a chamber, a photomask holder disposed within the chamber, and a gas dispenser disposed within the chamber to direct gas toward the photomask holder. The gas dispenser has two or more gas dispensing outlets. A driver is coupled to at least one of the photomask holder or the gas dispenser to establish relative movement between the photomask holder and the gas dispenser.

Abstract: A method for removing particles includes receiving a pellicle including a pellicle membrane, a pellicle frame and at least a particle disposed on the pellicle membrane, generating light beams to form an optical trap extending in a direction perpendicular to the pellicle membrane, and removing the particle from the pellicle membrane by the optical trap.

Abstract: A curved display and a method for binding a cover glass of the curved display are provided. The curved display includes a display module, a frame body and a cover glass. The frame body has a first flat surface and a second flat surface opposite to the first flat surface, in which the first flat surface is adhered to the display module. The cover glass has a binding flat surface and an application surface opposite to the binding flat surface, in which the binding flat surface is adhered to the second flat surface of the frame body, and the application surface is a surface with curvature. The second flat surface of the frame body is set with a first alignment mark, and the binding flat surface of the cover glass is set with a second alignment mark, and the first alignment mark corresponds to the second alignment mark.

Abstract: A method for cleaning a reflective photomask, a method of manufacturing a semiconductor structure, and a system for forming a semiconductor structure are provided. The method for cleaning a reflective photomask includes placing a photomask in a first chamber, and performing a dry cleaning operation on the photomask in the first chamber, wherein the dry cleaning operation includes providing hydrogen radicals to the first chamber, generating hydrocarbon gases as a result of reactions of the hydrogen radicals, and removing the hydrocarbon gases from the first chamber.

Abstract: One or more embodiments of the present disclosure describe an artificial intelligence assisted substrate defect repair apparatus and method. The AI assisted defect repair apparatus employs an object detection algorithm. Based on the plurality of images taken by detectors located at different respective positions, the detectors capture various views of an object including a defect. The composition information as well as the morphology information (e.g., shape, size, location, height, depth, width, length, or the like) of the defect and the object are obtained based on the plurality of images. The object detection algorithm analyzes the images and determines the type of defect and the recommends a material (e.g., etching gas) and the associated information (e.g., supply time of the etching gas, flow rate of the etching gas, etc.) for fixing the defect.

Abstract: The present disclosure provides a photomask and a method for fabricating a semiconductor structure with a photomask. The photomask includes a substrate, and a polymer layer over a surface of the substrate, wherein the polymer layer includes a thermoplastic polymer and a hydrophobic layer, wherein the thermoplastic polymer is between the hydrophobic layer and the surface of the photomask.