Abstract: A method of a first communication node may comprise: transmitting, to a second communication node, an initiation signal indicating to initiate a collection procedure of training data for a neural network; transmitting, to the second communication node, an information signal including network parameters of the first communication node; receiving, from the second communication node, the training data in response to the information signal; training the neural network using the training data; determining optimal network parameters using the trained neural network; and performing communication with the second communication node using the optimal network parameters.

Abstract: A propulsion module of an air mobility vehicle may include a door provided in the housing and opening or closing the opening portion of the housing by a sliding motion of the door; a propeller for providing propulsion to the air mobility vehicle; a link assembly having a first end portion connected to the housing and a second end portion connected to the propeller to pull the propeller into the internal space of the housing through the opening portion or pull the propeller outside the internal space through the opening portion; and a door opening and closing portion coupled to the door and configured for providing an opening and closing force to the door according to an inward-pulling motion or an outward-pulling motion of the propeller.

Abstract: A throttle control method for a mobile device include collecting input data, generating a first set of user experience indices according to the input data, and checking whether a user experience index of the first set of user experience indices satisfies a UEI threshold. The input data includes common information data, current configuration data and a plurality of throttle control parameters. Each user experience index of the first set of user experience indices is corresponding to at least one of throttle control parameter of the plurality of throttle control parameters.

Abstract: The present disclosure relates to a cathode active material for an all-solid-state battery with a controlled particle size and a method for preparing the same. In particular, the cathode active material includes lithium and a transition metal, wherein the cathode active material has a single peak in the range of 1 ?m to 10 ?m as a result of particle size distribution (PSD) analysis.

Abstract: Provided is a marker composition for predicting the prognosis of cancer and a method for predicting the prognosis of cancer using same and, more particularly, to a marker composition for predicting the prognosis of cancer comprising an agent for measuring an expression level of mRNA or protein thereof of at least one gene selected from the group consisting of ESR1, BEST1, ACTA2, HIPK2, IGSF9, ASCC2, JUN, PPP2R5A, SMAD3, CREBBP, EP300, and DDX5, to a method for predicting the prognosis of cancer using same, and to a method for providing information for determining a strategy for treating cancer.

Abstract: Disclosed is a method for analyzing a shape of a wafer. The method includes measuring external shapes of a plurality of wafers, detecting a first point having a maximum curvature in an edge region of each wafer from measured values acquired in the measuring the external shapes of the wafers, detecting a second point spaced apart from the first point in a direction towards an apex of a corresponding one of the wafers, measuring a first angle formed between a first line configured to connect the first point and the second point and a front side of the corresponding one of the wafers, forming a thin film layer on a surface of each wafer, measuring a thickness profile of the thin film layer, and confirming a wafer in which a maximum value of the thickness profile of the thin film layer is the smallest among the wafers.

Abstract: A confectionery product comprising of a layer of gummy confectionery, made up of one or more sections, which coat a non-edible object or container. This container is purposed to house a children's toy and support the layer of confectionery. Methods of preparing the confectionery-coated object also are provided.

Abstract: Disclosed is a method for analyzing a shape of a wafer. The method includes measuring external shapes of a plurality of wafers, detecting a first point having a maximum curvature in an edge region of each wafer from measured values acquired in the measuring the external shapes of the wafers, detecting a second point spaced apart from the first point in a direction towards an apex of a corresponding one of the wafers, measuring a first angle formed between a first line configured to connect the first point and the second point and a front side of the corresponding one of the wafers, forming a thin film layer on a surface of each wafer, measuring a thickness profile of the thin film layer, and confirming a wafer in which a maximum value of the thickness profile of the thin film layer is the smallest among the wafers.

Abstract: Provided is a semiconductor substrate including a seed layer disposed on a substrate, a buffer layer disposed on the seed layer, a plurality of nitride semiconductor layers disposed on the buffer layer, and at least one stress control layer between the plurality of nitride semiconductor layers. The buffer layer includes a plurality of step regions and at least one heterogeneous region. The plurality of step regions includes the same nitride semiconductor material. The heterogeneous region includes a different nitride semiconductor material from the step regions.

Abstract: Provided is a semiconductor substrate including a seed layer disposed on a substrate, a buffer layer disposed on the seed layer, a plurality of nitride semiconductor layers disposed on the buffer layer, and at least one stress control layer between the plurality of nitride semiconductor layers. The buffer layer includes a plurality of step regions and at least one heterogeneous region. The plurality of step regions includes the same nitride semiconductor material. The heterogeneous region includes a different nitride semiconductor material from the step regions.

Abstract: Provided is a semiconductor substrate including a seed layer disposed on a substrate, a buffer layer disposed on the seed layer, a plurality of nitride semiconductor layers disposed on the buffer layer, and at least one stress control layer between the plurality of nitride semiconductor layers. The buffer layer includes a plurality of step regions and at least one heterogeneous region. The plurality of step regions includes the same nitride semiconductor material. The heterogeneous region includes a different nitride semiconductor material from the step regions.

Abstract: Provided is a semiconductor substrate including a seed layer disposed on a substrate, a buffer layer disposed on the seed layer, a plurality of nitride semiconductor layers disposed on the buffer layer, and at least one stress control layer between the plurality of nitride semiconductor layers. The buffer layer includes a plurality of step regions and at least one heterogeneous region. The plurality of step regions includes the same nitride semiconductor material. The heterogeneous region includes a different nitride semiconductor material from the step regions.

Abstract: A method of programming a multi-level cells (MLC) commonly coupled to a word line in a non-volatile memory device includes shadow-programming first MLC to a first shadow state, shadow-programming second MLC to a second shadow state less than the first shadow state, and then main-programming the first MLC from the first shadow state to a first final state and main-programming the second MLC from the second shadow state to the second final state less than the first final state.

Abstract: A method of programming a multi-level cells (MLC) commonly coupled to a word line in a non-volatile memory device includes shadow-programming first MLC to a first shadow state, shadow-programming second MLC to a second shadow state less than the first shadow state, and then main-programming the first MLC from the first shadow state to a first final state and main-programming the second MLC from the second shadow state to the second final state less than the first final state.