Abstract: An integrated circuit structure includes a first metal feature formed into a first dielectric layer, a second metal feature formed into a second dielectric layer, the second dielectric layer being disposed on said first dielectric layer, and a via connecting the first metal feature to the second metal feature, wherein a top portion of the via is offset from a bottom portion of the via.

Abstract: Provided herein, inter alia, are compound and methods of treating cancer by inhibiting HDAC8.

Abstract: Provided herein, inter alia, are compound and methods of treating cancer by inhibiting HDAC8.

Abstract: Provided herein, inter alia, are compound and methods of treating cancer by inhibiting HDAC8.

Abstract: A test key for a semiconductor structure is provided for in-line defecting defects of the contact. The test key is disposed on a scribe line of a wafer substrate, and includes conductive structures and contacts under test. The conductive structures are electrically connected with the substrate and the contacts under test are not electrically connected with the substrate. The conductive structures and the contacts under test are regularly arranged in array. When an electronic beam is utilized to perform in-line monitoring, the normal contacts under test will be shown as bright dots and the bright dots are regularly arranged in the array; any contact under test with defect will be shown as a dark dot which results in an irregular arrangement of the bright dots.

Abstract: A highly sensitive defect detection method is disclosed. A medium with a refractive index greater than 1 is formed on a sample. As a result, incident light projected by a defect detecting system attenuates less when reaching the bottom defects. The detection sensitivity of the defect detecting system is enhanced accordingly.

Abstract: A highly sensitive defect detection method is disclosed. A medium with a refractive index greater than 1 is formed on a sample. As a result, incident light projected by a defect detecting system attenuates less when reaching the bottom defects. The detection sensitivity of the defect detecting system is enhanced accordingly.

Abstract: The present invention is suitable for a computer to (printing) plate to generate specific color accurately, applied data conversion modules included in Profile technique to generate specific color. Drafting software is developed for the pre-print designers adjust CMYK four colors process for printing in allowable proportion to meet the customer's color specification. A tour guide test table composed of 600 colorants is printed out by CMYK color printer, and a subsequent test table constructed by moving colorimeter or spectrophotometer through the colorants, first a forward module constructed by converting CMYK into CIEL*a*b*, and then a reverse module converting CIEL*a*b* into CMYK constructed by optimizing solutions of delta error convergence and error estimates methods. After measuring the CIEL*a*b* values of the specific color by colorimeter, applied the forward and reverse modules to predict CMYK color values in allowable proportion, achieve a better, speedy, and accurate drafting effects.

Abstract: A method for generating a color monitor profile for different operating system comprises the steps of: building a multimedia film for a screen to be measured; playing the multimedia film on the screen; measuring hues, gray levels, and RGB values of the screen by using a color meter near the screen; transferring outputs from color meter to a computer having a color management softwear so as to build a color monitor profile for the computer. Thereby, it is unnecessary to develop another color management softwear to fit for the operating system used in the screen.

Abstract: A method of forming a dual damascene opening, comprising the following steps. A semiconductor structure having at least one exposed metal line is provided. A spin-on-polymer layer is formed over the semiconductor structure and the metal line. A CVD low-k material layer is formed over the spin-on-polymer layer. The CVD low-k material layer is patterned to form a CVD low-k material layer via over the metal line. The spin-on-polymer layer is patterned to form a spin-on-polymer layer via opening continuous and contiguous with the CVD low-k material layer via and exposing a portion of the metal line. The CVD low-k material layer adjacent the CVD low-k material layer via is patterned to form a CVD low-k material layer trench. The spin-on-polymer layer via opening and the CVD low-k material layer trench forming a dual damascene opening.

Abstract: A deposition process for silicon oxycarbide films suitable for use as anti-reflection coatings is described. The, process is based on plasma enhanced CVD of silane mixed with methyl-silane, trimethyl-silane, or tetramethyl-silane (together with a carrier gas). Provided the relative gas flow rates are maintained within the ranges specified, films having excellent ARL properties are obtained, with photoresist patterns formed on said films being free of overhangs and footings.

Abstract: The present invention relates to an improved structure of an automobile center lock driving apparatus, and in particular to an center lock driving apparatus having an inertia gear module. The driving apparatus comprises a driving pull-rod, a transmission gear, an inertia clutching gear, an active gear and a motor. The apparatus provides a solution to wear of the gears, dislocation of the gears, and “dead lock” of the driving pull-rod, and gear damages as a result of shock caused by dislocation of transmission gear modules. At instantaneous driving, the driving pull-rod can be driven more smoothly and stable as a result of the inertia gap between the gear modules.

Abstract: A new method is provided to treat the surface of a low-k material. The invention is specifically aimed at the improvement of the TaN barrier layer that is used in the deposition of a dual damascene structure. The invention uses e-beam exposure to improve the barrier metal (PVD TaN) properties for copper and low-k applications.

Abstract: A driving pull rod assembly of a central control lock for automobiles includes a U-shaped frame having a top and a bottom respectively provided with a protuberance, a slide slidably fitted within the U-shaped frame and formed with a longitudinal threaded hole, a flange configured to engage with the U-shaped frame, and two stop members at a top and a bottom thereof, a driving gear having a side formed with a recess provided with two oppositely disposed resilient V-shaped members, a tubular lead screw integrally made of plastic and threadedly engaged with the longitudinal threaded hole of the slide, the tubular lead screw including a metal shaft extending therethrough, the metal shaft having an end provided with an engaging member, the engaging member being configured to fit into the recess, and a motor drivingly connected with the driving gear.