Abstract: The structure of a semiconductor device with different gate structures configured to provide ultra-low threshold voltages and a method of fabricating the semiconductor device are disclosed. The method includes forming first and second nanostructured channel regions in first and second nanostructured layers, respectively, and forming first and second gate-all-around (GAA) structures surrounding the first and second nanostructured channel regions, respectively. The forming the first and second GAA structures includes selectively forming an Al-based n-type work function metal layer and a Si-based capping layer on the first nanostructured channel regions, depositing a bi-layer of Al-free p-type work function metal layers on the first and second nanostructured channel regions, depositing a fluorine blocking layer on the bi-layer of Al-free p-type work function layers, and depositing a gate metal fill layer on the fluorine blocking layer.

Abstract: Planetary reduction for drive axle, of the type comprising: an axle housing (60), which is attached to the chassis of vehicle and lodges an axle shaft (50) that holds an end central sun gear (70), which is meshed with a ring gear (90), which is internally toothed and coupled to the axle housing (60), through planetary pinions (80) mounted on respective shafts (81), which are attached to a planetary spider (100) coupled to a wheel mounting flange (110); and an optional disc brake assembly (130), which has at least one stationary disc (132) and one friction disc (133); an output shaft (101), which is attached to the planetary spider (100) and which supports the wheel mounting flange (110); a wheel bearing cage (120), which is coupled to the axle housing (60) and supports the output shaft (101), through a wheel bearing set (121);a brake housing (131), which is coupled to the axle housing (60) and which attaches thereto said stationary discs (132);removable fastening elements (140), which are provided through the