Abstract: A fusible structure includes: a conductive segment in a first layer extending along a first direction; and a first dummy structure being proximal to the conductive segment relative to a second direction, the second direction being perpendicular to the first direction, the first dummy structure being in a second layer different than the first layer; and wherein: relative to the first direction, the conductive segment includes first, second and third portions, the second portion being between the first portion and the third portion; and relative to a third direction that is perpendicular to the first direction and the second direction, the first portion is thicker than the second portion.

Abstract: A fusible structure includes: a metal line in a first metal layer extending along a first direction; and a first dummy structure disposed proximal to the metal line relative to a second direction, the second direction being perpendicular to the first direction, the first dummy structure being in a second metal layer. Relative to the first direction, the metal line includes first, second and third portions, the second portion being between the first portion and third portion. Relative to a third direction that is perpendicular to the first direction and the second direction, the first portion has a first thickness and the second portion has a second thickness, the first thickness being greater than the second thickness.

Abstract: A method (fabricating a fusible structure) includes forming a metal line that extends in a first direction, the forming a metal line including: configuring the mask such that the metal line has a first portion that is between a second portion and a third portion; and using an optical proximity correction technique with a mask so that the first portion has a first thickness that is thinner than a second thickness of each of the second portion and the third portion; and forming a first dummy structure proximal to the metal line and aligned with the first portion relative to the first direction.

Abstract: An integrated circuit includes a first active region, a second active region, a first fuse and a dummy fuse. The first active region extends in a first direction, and is on a first level. The second active region extends in the first direction, is on the first level, and is separated from the first active region in a second direction different from the first direction. The first fuse extends in the first direction, is on a second level, overlaps the first active region and is electrically coupled to the first active region. The dummy fuse extends in the first direction, is on the second level, and is separated from the first fuse in the second direction. The dummy fuse overlaps the second active region, and is not electrically coupled to the second active region.

Abstract: A fusible structure includes: a metal line in a first metal layer extending along a first direction; and a first dummy structure disposed proximal to the metal line relative to a second direction, the second direction being perpendicular to the first direction, the first dummy structure being in a second metal layer. Relative to the first direction, the metal line includes first, second and third portions, the second portion being between the first portion and third portion. Relative to a third direction that is perpendicular to the first direction and the second direction, the first portion has a first thickness and the second portion has a second thickness, the first thickness being greater than the second thickness.

Abstract: A fusible structure includes a metal line with different portions having different thicknesses. Thinner portions of the metal line are designed to be destructively altered at lower voltages while thicker portions of the metal line are designed to be destructively altered at lower voltages. Furthermore, one or more dummy structures are disposed proximal to the thinner portions of the metal line. In some embodiments, dummy structures are placed with sufficient proximity so as to protect against metal sputtering when metal line is destructively altered.

Abstract: A method (fabricating a fusible structure) includes forming a metal line that extends in a first direction, the forming a metal line including: configuring the mask such that the metal line has a first portion that is between a second portion and a third portion; and using an optical proximity correction technique with a mask so that the first portion has a first thickness that is thinner than a second thickness of each of the second portion and the third portion; and forming a first dummy structure proximal to the metal line and aligned with the first portion relative to the first direction.

Abstract: A fusible structure includes a metal line with different portions having different thicknesses. Thinner portions of the metal line are designed to be destructively altered at lower voltages while thicker portions of the metal line are designed to be destructively altered at lower voltages. Furthermore, one or more dummy structures are disposed proximal to the thinner portions of the metal line. In some embodiments, dummy structures are placed with sufficient proximity so as to protect against metal sputtering when metal line is destructively altered.

Abstract: An image-based vehicle classification system includes a camera and an image server connected to the camera. The camera captures images of a road to result in an image stream. The image server includes a processor for receiving the image stream from the camera. For each of the images of the image stream, the processor performs image segmentation, a thinning process, an erosion process and a dilation process, and classifies, by a neural network classifier, a vehicle image part contained in the image into one of a large-size car class, a passenger car class and a motorcycle class when it is determined that the vehicle image is crossing an imaginary line set in advance in the image for counting vehicles.

Abstract: An image-based vehicle classification system includes a camera and an image server connected to the camera. The camera captures images of a road to result in an image stream. The image server includes a processor for receiving the image stream from the camera. For each of the images of the image stream, the processor performs image segmentation, a thinning process, an erosion process and a dilation process, and classifies, by a neural network classifier, a vehicle image part contained in the image into one of a large-size car class, a passenger car class and a motorcycle class when it is determined that the vehicle image is crossing an imaginary line set in advance in the image for counting vehicles.

Abstract: A method for estimating a number of objects is to be implemented by a processing module, and is utilized to estimate a number of a plurality of objects having elongated shapes based on an image of the objects that contains substantially-circular end faces of the objects. The method includes steps of generating a characteristic image based on the image of the objects, the characteristic image containing a plurality of characteristic patterns which are associated with the end faces of the objects, calculating a number of the characteristic patterns based on the characteristic image, and obtaining an estimated number of the objects based on at least the number of the characteristic patterns thus calculated.

Abstract: A method for estimating a number of objects is to be implemented by a processing module, and is utilized to estimate a number of a plurality of objects having elongated shapes based on an image of the objects that contains substantially-circular end faces of the objects. The method includes steps of generating a characteristic image based on the image of the objects, the characteristic image containing a plurality of characteristic patterns which are associated with the end faces of the objects, calculating a number of the characteristic patterns based on the characteristic image, and obtaining an estimated number of the objects based on at least the number of the characteristic patterns thus calculated.

Abstract: An integrated circuit device includes a semiconductor substrate and a first transistor and a second transistor constructed in the semiconductor substrate. The first transistor has a first operating voltage higher than a second operating voltage of a second transistor. The first transistor includes a first drain structure, a first source structure, an isolation structure and a first gate structure. The first source structure includes a high voltage first-polarity well region, a first-polarity body region, a heavily doped first-polarity region, a second-polarity grade region and a heavily doped second-polarity region. The heavily doped second-polarity region is surrounded by the second-polarity grade region. The second-polarity grade region is surrounded by the first-polarity body region. The second transistor includes a second drain structure, a second source structure, a second gate structure and a first-polarity drift region.

Abstract: A HV MOSFET device includes a substrate, a deep well region, a source/body region, a drain region, a gate structure, and a first doped region. The deep well region includes a boundary site and a middle site. The source/body region is formed in the deep well region and defines a channel region. The first doped region is formed in the deep well region and disposed under the gate structure, and having the first conductivity type. There is a first ratio between a dopant dose of the first doped region and a dopant dose of the boundary site of the deep well region. There is a second ratio between a dopant dose of the first doped region and a dopant dose of the middle site of the deep well region. A percentage difference between the first ratio and the second ratio is smaller than or equal to 5%.

Abstract: A HV MOSFET device includes a substrate, a deep well region, a source/body region, a drain region, a gate structure, and a first doped region. The deep well region includes a boundary site and a middle site. The source/body region is formed in the deep well region and defines a channel region. The first doped region is formed in the deep well region and disposed under the gate structure, and having the first conductivity type. There is a first ratio between a dopant dose of the first doped region and a dopant dose of the boundary site of the deep well region. There is a second ratio between a dopant dose of the first doped region and a dopant dose of the middle site of the deep well region. A percentage difference between the first ratio and the second ratio is smaller than or equal to 5%.

Abstract: An integrated circuit device includes a semiconductor substrate and a first transistor and a second transistor constructed in the semiconductor substrate. The first transistor has a first operating voltage higher than a second operating voltage of a second transistor. The first transistor includes a first drain structure, a first source structure, an isolation structure and a first gate structure. The first source structure includes a high voltage first-polarity well region, a first-polarity body region, a heavily doped first-polarity region, a second-polarity grade region and a heavily doped second-polarity region. The heavily doped second-polarity region is surrounded by the second-polarity grade region. The second-polarity grade region is surrounded by the first-polarity body region. The second transistor includes a second drain structure, a second source structure, a second gate structure and a first-polarity drift region.

Abstract: There is disclosed a shower apparatus including a shower, an outlet device and a control device. The shower includes a handle defining a passageway and a head defining a space in communication with the passageway and a recess in communication with the space. The outlet device is put in the space and can be switched between a closed position and an open position and kept in the open position as long as water keeps coming. The control device extends into the space from the recess so that it can be operated in order to switch the outlet device to the open position from the closed position.

Abstract: A flow control apparatus includes a housing. A valve is rotationally installed in the housing. A bolt includes a first end connected with the valve in the housing and an opposite second end inserted to the exterior of the housing. A joint is connected with the housing in order to keep the valve in the housing.

Abstract: An improved laminated padlock which includes: a lock body made of a plurality of metal plates with a central chamber and a number of openings formed therein; a cylindrical lock barrel matched with a tumbler structure disposed in the central chamber of the lock body; an improved locking mechanism movably installed in a housing structure in the upper portion of the central chamber; and a U-shaped shackle with facing notches slidingly provided in the openings of the lock body. The improved lock mechanism comprises a pair of lock members identically formed in an I-shaped structure, and a pair of elastic members also identically shaped so that a simpler structure and ab effective operation are achieved therewith.