Patents by Inventor Chung-Il Hyun
Chung-Il Hyun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11121154Abstract: A semiconductor device includes a substrate, a stack, and channel structures penetrating the stack. The stack includes gate electrodes and insulating layers alternately and repeatedly stacked on the substrate, and extending in a first direction. The channel structures in a first row are spaced apart from each other in the first direction. The stack includes a first sidewall that includes first recessed portions and first protruding portions. Each of first recessed portions is defined by an adjacent pair of the first recessed portions. Each of the first recessed portions has a shape recessed toward a first region of the stack between an adjacent pair of the channel structures of the first row. Each of the first recessed portions has a width that decreases in a direction toward the first region when measured along the first direction.Type: GrantFiled: March 6, 2020Date of Patent: September 14, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Byoungkeun Son, Yoocheol Shin, Changhyun Lee, Hyunjung Kim, Chung-Il Hyun
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Publication number: 20200212063Abstract: A semiconductor device includes a substrate, a stack, and channel structures penetrating the stack. The stack includes gate electrodes and insulating layers alternately and repeatedly stacked on the substrate, and extending in a first direction. The channel structures in a first row are spaced apart from each other in the first direction. The stack includes a first sidewall that includes first recessed portions and first protruding portions. Each of first recessed portions is defined by an adjacent pair of the first recessed portions. Each of the first recessed portions has a shape recessed toward a first region of the stack between an adjacent pair of the channel structures of the first row. Each of the first recessed portions has a width that decreases in a direction toward the first region when measured along the first direction.Type: ApplicationFiled: March 6, 2020Publication date: July 2, 2020Inventors: Byoungkeun SON, Yoocheol SHIN, Changhyun LEE, Hyunjung KIM, Chung-Il HYUN
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Patent number: 10658230Abstract: A semiconductor device includes a comprise a substrate including a main zone and an extension zone, vertical channels on the main zone, and an electrode structure including gate electrodes stacked on the substrate. The vertical channel structures extend in a first direction perpendicular to a top surface of the substrate. The gate electrodes include line regions and contact regions. The line regions extend from the main zone toward the extension zone along a second direction the second direction that is perpendicular to the first direction. The contact regions are on ends of the line regions and are thicker than the line regions. A spacing distance in the second direction between the contact regions is greater than a spacing distance in the first direction between the line regions.Type: GrantFiled: May 13, 2019Date of Patent: May 19, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Chung-Il Hyun, Semee Jang, Sung Yun Lee
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Patent number: 10586808Abstract: A semiconductor device includes a substrate, a stack, and channel structures penetrating the stack. The stack includes gate electrodes and insulating layers alternately and repeatedly stacked on the substrate, and extending in a first direction. The channel structures in a first row are spaced apart from each other in the first direction. The stack includes a first sidewall that includes first recessed portions and first protruding portions. Each of first recessed portions is defined by an adjacent pair of the first recessed portions. Each of the first recessed portions has a shape recessed toward a first region of the stack between an adjacent pair of the channel structures of the first row. Each of the first recessed portions has a width that decreases in a direction toward the first region when measured along the first direction.Type: GrantFiled: July 19, 2019Date of Patent: March 10, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Byoungkeun Son, Yoocheol Shin, Changhyun Lee, Hyunjung Kim, Chung-Il Hyun
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Patent number: 10411031Abstract: A semiconductor device includes a substrate, a stack, and channel structures penetrating the stack. The stack includes gate electrodes and insulating layers alternately and repeatedly stacked on the substrate, and extending in a first direction. The channel structures in a first row are spaced apart from each other in the first direction. The stack includes a first sidewall that includes first recessed portions and first protruding portions. Each of first recessed portions is defined by an adjacent pair of the first recessed portions. Each of the first recessed portions has a shape recessed toward a first region of the stack between an adjacent pair of the channel structures of the first row. Each of the first recessed portions has a width that decreases in a direction toward the first region when measured along the first direction.Type: GrantFiled: March 26, 2018Date of Patent: September 10, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Byoungkeun Son, Yoocheol Shin, Changhyun Lee, Hyunjung Kim, Chung-Il Hyun
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Publication number: 20190273020Abstract: A semiconductor device includes a comprise a substrate including a main zone and an extension zone, vertical channels on the main zone, and an electrode structure including gate electrodes stacked on the substrate. The vertical channel structures extend in a first direction perpendicular to a top surface of the substrate. The gate electrodes include line regions and contact regions. The line regions extend from the main zone toward the extension zone along a second direction the second direction that is perpendicular to the first direction. The contact regions are on ends of the line regions and are thicker than the line regions. A spacing distance in the second direction between the contact regions is greater than a spacing distance in the first direction between the line regions.Type: ApplicationFiled: May 13, 2019Publication date: September 5, 2019Applicant: Samsung Electronics Co., Ltd.Inventors: Chung-Il Hyun, Semee JANG, Sung Yun LEE
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Patent number: 10312138Abstract: A semiconductor device includes a comprise a substrate including a main zone and an extension zone, vertical channels on the main zone, and an electrode structure including gate electrodes stacked on the substrate. The vertical channel structures extend in a first direction perpendicular to a top surface of the substrate. The gate electrodes include line regions and contact regions. The line regions extend from the main zone toward the extension zone along a second direction the second direction that is perpendicular to the first direction. The contact regions are on ends of the line regions and are thicker than the line regions. A spacing distance in the second direction between the contact regions is greater than a spacing distance in the first direction between the line regions.Type: GrantFiled: March 23, 2017Date of Patent: June 4, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Chung-Il Hyun, Semee Jang, Sung Yun Lee
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Patent number: 9947686Abstract: A semiconductor device includes a substrate, a stack, and channel structures penetrating the stack. The stack includes gate electrodes and insulating layers alternately and repeatedly stacked on the substrate, and extending in a first direction. The channel structures in a first row are spaced apart from each other in the first direction. The stack includes a first sidewall that includes first recessed portions and first protruding portions. Each of first recessed portions is defined by an adjacent pair of the first recessed portions. Each of the first recessed portions has a shape recessed toward a first region of the stack between an adjacent pair of the channel structures of the first row. Each of the first recessed portions has a width that decreases in a direction toward the first region when measured along the first direction.Type: GrantFiled: March 13, 2017Date of Patent: April 17, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Byoungkeun Son, Yoocheol Shin, Changhyun Lee, Hyunjung Kim, Chung-Il Hyun
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Publication number: 20180053686Abstract: A semiconductor device includes a comprise a substrate including a main zone and an extension zone, vertical channels on the main zone, and an electrode structure including gate electrodes stacked on the substrate. The vertical channel structures extend in a first direction perpendicular to a top surface of the substrate. The gate electrodes include line regions and contact regions. The line regions extend from the main zone toward the extension zone along a second direction the second direction that is perpendicular to the first direction. The contact regions are on ends of the line regions and are thicker than the line regions. A spacing distance in the second direction between the contact regions is greater than a spacing distance in the first direction between the line regions.Type: ApplicationFiled: March 23, 2017Publication date: February 22, 2018Inventors: Chung-IL HYUN, Semee JANG, Sung Yun LEE
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Patent number: 9627396Abstract: A semiconductor device includes a substrate, a stack, and channel structures penetrating the stack. The stack includes gate electrodes and insulating layers alternately and repeatedly stacked on the substrate, and extending in a first direction. The channel structures in a first row are spaced apart from each other in the first direction. The stack includes a first sidewall that includes first recessed portions and first protruding portions. Each of first recessed portions is defined by an adjacent pair of the first recessed portions. Each of the first recessed portions has a shape recessed toward a first region of the stack between an adjacent pair of the channel structures of the first row. Each of the first recessed portions has a width that decreases in a direction toward the first region when measured along the first direction.Type: GrantFiled: May 29, 2015Date of Patent: April 18, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Byoungkeun Son, Yoocheol Shin, Changhyun Lee, Hyunjung Kim, Chung-Il Hyun
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Patent number: 8836074Abstract: A semiconductor memory device includes linear patterns disposed between isolation trenches extending in a first direction in a semiconductor device and having a first crystal direction the same as the semiconductor substrate. A bridge pattern connects at least two adjacent linear patterns and includes a semiconductor material having a second crystal direction different from the first crystal direction. A first isolation layer pattern is disposed in at least one of the isolation trenches in a field region of the semiconductor substrate. Memory cells are disposed on at least one of the linear patterns.Type: GrantFiled: December 27, 2012Date of Patent: September 16, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Byung-Kwan You, Seung-Woo Paek, Chung-Il Hyun, Jung-Dal Choi
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Patent number: 7799645Abstract: An embodiment of a semiconductor device includes a substrate including a cell region and a peripheral region; a cell gate pattern on the cell region; and a peripheral gate pattern on the peripheral region, wherein a first cell insulation layer, a second cell insulation layer, and a third cell insulation layer may be between the substrate and the cell gate pattern, a first peripheral insulation layer, a second peripheral insulation layer, and a third peripheral insulation layer may be between the substrate and the peripheral gate pattern, and the second cell insulation layer and the third cell insulation layer include the same material as the respective second peripheral insulation layer and third peripheral insulation layer.Type: GrantFiled: September 11, 2008Date of Patent: September 21, 2010Assignee: Samsung Electronics Co., LtdInventors: Jung-Dal Choi, Young-Woo Park, Jin-Taek Park, Chung-Il Hyun
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Publication number: 20090072298Abstract: An embodiment of a semiconductor device includes a substrate including a cell region and a peripheral region; a cell gate pattern on the cell region; and a peripheral gate pattern on the peripheral region, wherein a first cell insulation layer, a second cell insulation layer, and a third cell insulation layer may be between the substrate and the cell gate pattern, a first peripheral insulation layer, a second peripheral insulation layer, and a third peripheral insulation layer may be between the substrate and the peripheral gate pattern, and the second cell insulation layer and the third cell insulation layer include the same material as the respective second peripheral insulation layer and third peripheral insulation layer.Type: ApplicationFiled: September 11, 2008Publication date: March 19, 2009Inventors: Jung-Dal Choi, Young-Woo Park, Jin-Taek Park, Chung-il Hyun