Abstract: Disclosed are semiconductor devices, electronic systems including the same, and methods of fabricating the same. The semiconductor device comprises a source structure that includes a support source layer, a gate stack structure on the support source layer, a memory channel structure that penetrates through the gate stack structure and the support source layer, and a separation structure that penetrates through the gate stack structure and the support source layer. The support source layer includes a first source part through which the memory channel structure penetrates, and a second source part through which the separation structure penetrates. A top surface of the first source part is at a level lower than that of a top surface of the second source part.

Abstract: A semiconductor device is provided. Word lines are formed on a substrate. An air gap is interposed between two adjacent word lines. A channel structure penetrates through the word lines and the air gap. A memory cell is interposed between each word line and the channel structure. The memory cell includes a blocking pattern, a charge trap pattern and a tunneling insulating pattern. The blocking pattern conformally covers a top surface, a bottom surface, and a first side surface of each word line. The first side surface is adjacent to the channel structure. The charge trap pattern is interposed only between the first side surface and the channel structure.

Abstract: A semiconductor device is provided. Word lines are formed on a substrate. An air gap is interposed between two adjacent word lines. A channel structure penetrates through the word lines and the air gap. A memory cell is interposed between each word line and the channel structure. The memory cell includes a blocking pattern, a charge trap pattern and a tunneling insulating pattern. The blocking pattern conformally covers a top surface, a bottom surface, and a first side surface of each word line. The first side surface is adjacent to the channel structure. The charge trap pattern is interposed only between the first side surface and the channel structure.