Abstract: A method of preventing the scrapping of semiconductor substrates due to improper deposition of thin films in a thin film vaporization system is disclosed. This is accomplished by providing a method of self-calibrating and testing the flow of liquid precursors in the vaporization system prior to the start of the deposition process. The vaporization of the liquid precursor in the deposition chamber and the concomitant pressure change in the chamber are correlated. This correlation is then used as a real time monitoring mechanism for self-calibrating and testing the flow of liquid precursors through the vaporization system. That the pressure change due to vaporization in the chamber is used as the key parameter, the thin film deposition is hence monitored by that parameter which directly predicts the film deposition characteristics. Consequently, each thin film run is assured of a successful run.

Abstract: A method of preventing the scrapping of semiconductor substrates due to improper deposition of thin films in a thin film vaporization system is disclosed. This is accomplished by providing a method of self-calibrating and testing the flow of liquid precursors in the vaporization system prior to the start of the deposition process. The vaporization of the liquid precursor in the deposition chamber and the concomitant pressure change in the chamber are correlated. This correlation is then used as a real time monitoring mechanism for self-calibrating and testing the flow of liquid precursors through the vaporization system. That the pressure change due to vaporization in the chamber is used as the key parameter, the thin film deposition is hence monitored by that parameter which directly predicts the film deposition characteristics. Consequently, each thin film run is assured of a successful run.

Abstract: A method of preventing the scrapping of semiconductor substrates due to improper deposition of thin films in a thin film vaporization system is disclosed. This is accomplished by providing a method of self-calibrating and testing the flow of liquid precursors in the vaporization system prior to the start of the deposition process. The vaporization of the liquid precursor in the deposition chamber and the concomitant pressure change in the chamber are correlated. This correlation is then used as a real time monitoring mechanism for self-calibrating and testing the flow of liquid precursors through the vaporization system. That the pressure change due to vaporization in the chamber is used as the key parameter, the thin film deposition is hence monitored by that parameter which directly predicts the film deposition characteristics. Consequently, each thin film run is assured of a successful run.

Abstract: An apparatus for monitoring the Z-axis position of a transfer blade on a wafer transfer robot which transfers wafers among multiple chambers in a semiconductor fabrication facility. The invention comprises a CCD laser displacement sensor which measures the height or Z-axis position of the transfer blade and generates an analog voltage the value of which depends on the height of the transfer blade. An analog controller connected to the CCD laser displacement sensor converts the analog voltage signal to physical distance, which may be displayed on an LCD display on the analog controller. The analog controller may further be connected to a robot controller through an interface PCB, in which case a voltage signal corresponding to an abnormal position of the transfer blade is transmitted to the robot controller and the wafer transfer operation is terminated.

Abstract: An apparatus for monitoring the Z-axis position of a transfer blade on a wafer transfer robot which transfers wafers among multiple chambers in a semiconductor fabrication facility. The invention comprises a CCD laser displacement sensor which measures the height or Z-axis position of the transfer blade and generates an analog voltage the value of which depends on the height of the transfer blade. An analog controller connected to the CCD laser displacement sensor converts the analog voltage signal to physical distance, which may be displayed on an LCD display on the analog controller. The analog controller may further be connected to a robot controller through an interface PCB, in which case a voltage signal corresponding to an abnormal position of the transfer blade is transmitted to the robot controller and the wafer transfer operation is terminated.