Patents by Inventor Chung-Ju Yang

Chung-Ju Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Reliability caps for high-k dielectric anneals
    Patent number: 10340146
    Abstract: Structures for reliability caps used in the manufacture of a field-effect transistor and methods for forming reliability caps used in the manufacture of a field-effect transistor. A layer comprised of a metal silicon nitride is deposited on a high-k dielectric material. The high-k dielectric material is thermally processed in an oxygen-containing ambient environment with the layer arranged as a cap between the high-k dielectric material and the ambient environment. Due at least in part to its composition, the layer blocks transport of oxygen from the ambient environment to the high-k dielectric material.
    Type: Grant
    Filed: July 12, 2017
    Date of Patent: July 2, 2019
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Rohit Galatage, Shariq Siddiqui, Chung-Ju Yang
  • RELIABILITY CAPS FOR HIGH-K DIELECTRIC ANNEALS
    Publication number: 20190019682
    Abstract: Structures for reliability caps used in the manufacture of a field-effect transistor and methods for forming reliability caps used in the manufacture of a field-effect transistor. A layer comprised of a metal silicon nitride is deposited on a high-k dielectric material. The high-k dielectric material is thermally processed in an oxygen-containing ambient environment with the layer arranged as a cap between the high-k dielectric material and the ambient environment. Due at least in part to its composition, the layer blocks transport of oxygen from the ambient environment to the high-k dielectric material.
    Type: Application
    Filed: July 12, 2017
    Publication date: January 17, 2019
    Inventors: Rohit Galatage, Shariq Siddiqui, Chung-Ju Yang