Abstract: A luminescent layer is described comprising an Eu2+ doped inorganic luminescent material comprising or consisting essentially of the elements Al and/or Si and the elements O and/or N, the doped inorganic luminescent material converting radiation of the UV region between 200 nm and 400 nm of the solar spectrum into the photosynthetically active radiation (PAR) region (400 nm-700 nm) of the solar spectrum, wherein the Si concentration in the inorganic luminescent material is selected between 0 and 45 at. %, the Al concentration between 0 and 50 at. %, the O concentration between 0 and 70 at. %, the N concentration between 0 and 60 at. % and the Eu2+ between 0.01 and 30 at. %.

Abstract: A light diffuser includes a main body and first fillers. The first fillers are dispersed in the main body. The first fillers include at least one of ZrO2, Nb2O5, Ta2O5, SixNy, Si, Ge GaP, InP, and PbS, and a diameter of each of the first fillers is in a range from 0.1 ?m to 1 ?m.

Abstract: A biosensor is provided. The biosensor includes a substrate, photodiodes, pixelated filters, an excitation light rejection layer and an immobilization layer. The substrate has pixels. The photodiodes are disposed in the substrate and correspond to one of the pixels, respectively. The pixelated filters are disposed on the substrate. The excitation light rejection layer is disposed on the pixelated filter. The immobilization layer is disposed on the excitation light rejection layer.

Abstract: A biosensor is provided. The biosensor includes a substrate, photodiodes, pixelated filters, an excitation light rejection layer and an immobilization layer. The substrate has pixels. The photodiodes are disposed in the substrate and correspond to one of the pixels, respectively. The pixelated filters are disposed on the substrate. The excitation light rejection layer is disposed on the pixelated filter. The immobilization layer is disposed on the excitation light rejection layer.

Abstract: An optical element is provided. The optical element includes an array structure having an implant area and a non-implant area. The non-implant area is adjacent to the implant area. The implant area has an implant concentration ranging from 1×1013 cm?2 to 6.7×1013 cm?2. The array structure is a color filter array including a plurality of color filters. At least one of the color filters has the implant area. The implant area has a first refractive index. The non-implant area has a second refractive index. The first refractive index is greater than the second refractive index.

Abstract: An optical element is provided. The optical element includes an array structure having an implant area and a non-implant area. The non-implant area is adjacent to the implant area. The implant area has an implant concentration ranging from 1×1013 cm?2 to 6.7×1013 cm?2. The array structure is a color filter array including a plurality of color filters. At least one of the color filters has the implant area. The implant area has a first refractive index. The non-implant area has a second refractive index. The first refractive index is greater than the second refractive index.

Abstract: An image-sensor structure is provided. The image-sensor structure includes a substrate, a plurality of photoelectric conversion units formed in the substrate, a plurality of separated color filters formed above the substrate and the photoelectric conversion units, a first light shielding layer surrounding the separated color filters, and a first conductive polymer element blended with a low-refractive-index component filled between the individual separated color filters and between the all separated color filters and the first light shielding layer, wherein the first conductive polymer element is electrically connected to a grounding pad.

Abstract: An image-sensor structure is provided. The image-sensor structure includes a substrate, a plurality of photoelectric conversion units formed in the substrate, and a plurality of color filter patterns including a red filter pattern having a first refractive index, a green filter pattern having a second refractive index and a blue filter pattern having a third refractive index formed above the substrate and the photoelectric conversion units, wherein at least one color filter pattern contains a component having a specific refractive index such that the second refractive index of the green filter pattern is higher than the first refractive index of the red filter pattern and the third refractive index of the blue filter pattern.

Abstract: An image-sensor structure is provided. The image-sensor structure includes a substrate, a plurality of photoelectric conversion units formed in the substrate, and a plurality of color filter patterns including a red filter pattern having a first refractive index, a green filter pattern having a second refractive index and a blue filter pattern having a third refractive index formed above the substrate and the photoelectric conversion units, wherein at least one color filter pattern contains a component having a specific refractive index such that the second refractive index of the green filter pattern is higher than the first refractive index of the red filter pattern and the third refractive index of the blue filter pattern.

Abstract: An image-sensor structure is provided. The image-sensor structure includes a substrate, a plurality of photoelectric conversion units formed in the substrate, a plurality of separated color filters formed above the substrate and the photoelectric conversion units, a first light shielding layer surrounding the separated color filters, and a first conductive polymer element blended with a low-refractive-index component filled between the individual separated color filters and between the all separated color filters and the first light shielding layer, wherein the first conductive polymer element is electrically connected to a grounding pad.

Abstract: The present invention relates to a color filter array. The color filter array includes a plurality of pixel arrays, which has four color filters arranged in an array. The color of the neighboring color filters is distinct to each other. Moreover, the pattern of the color filter array has enlarged color filters or extended edges in corners of the pattern. These enlarged color filters or extended edges increase the contact area between the pattern and a substrate that the pattern formed on. Therefore, the adhesion strength between the pattern and the substrate can be augmented to prevent peeling from the substrate. According to the invention, the yield of the product will be raised substantially.

Abstract: The present invention relates to a pattern of a color filter array. The pattern includes a plurality of pixel arrays, which has four color filters arranged in an array. The color of the neighboring color filters is distinct to each other. Moreover, the pattern of the color filter array has enlarged color filters or extended edges in corners of the pattern. These enlarged color filters or extended edges increase the contact area between the pattern and a substrate that the pattern formed on. Therefore, the adhesion strength between the pattern and the substrate can be augmented to prevent peeling from the substrate. According to the invention, the yield of the product will be raised substantially.

Abstract: A biosensor device is provided, including a first semiconductor layer formed over an interconnect structure. A plurality of detection elements are formed in the first semiconductor layer. An optical filter layer is formed over and physically contacts the first semiconductor layer. A second semiconductor layer is formed over the optical filter layer, having opposing first and second surfaces, wherein the first surface physically contacts the optical filter layer. A plurality of isolation walls are formed over the second semiconductor layer from the second surface thereof, defining a plurality of micro-wells over the second semiconductor layer, wherein the isolation walls and the second semiconductor layer comprises the same material, and the micro-wells are correspondingly arranged with the detection elements. An immobilization layer is formed over the second semiconductor layer exposed by the micro-wells and a plurality of capture molecules are formed over the immobilization layer in the micro-wells.

Abstract: The present invention relates to a pattern of a color filter array. The pattern includes a plurality of pixel arrays, which has four color filters arranged in an array. The color of the neighboring color filters is distinct to each other. Moreover, the pattern of the color filter array has enlarged color filters or extended edges in corners of the pattern. These enlarged color filters or extended edges increase the contact area between the pattern and a substrate that the pattern formed on. Therefore, the adhesion strength between the pattern and the substrate can be augmented to prevent peeling from the substrate. According to the invention, the yield of the product will be raised substantially.

Abstract: A biosensor device is provided, including a first semiconductor layer formed over an interconnect structure. A plurality of detection elements are formed in the first semiconductor layer. An optical filter layer is formed over and physically contacts the first semiconductor layer. A second semiconductor layer is formed over the optical filter layer, having opposing first and second surfaces, wherein the first surface physically contacts the optical filter layer. A plurality of isolation walls are formed over the second semiconductor layer from the second surface thereof, defining a plurality of micro-wells over the second semiconductor layer, wherein the isolation walls and the second semiconductor layer comprises the same material, and the micro-wells are correspondingly arranged with the detection elements. An immobilization layer is formed over the second semiconductor layer exposed by the micro-wells and a plurality of capture molecules are formed over the immobilization layer in the mirco-wells.

Abstract: Embodiments disclose an image sensor device, comprising a substrate comprising a plurality of photosensor cells located therein or thereon, a plurality of optical guide structures corresponding to the photosensor cells respectively, and a stacked layer surrounding the optical guide structures, comprising a plurality of top portions with sharp corners adjacent to the top edges of the optical guide structures.

Abstract: The present invention relates to a pattern of a color filter array. The pattern includes a plurality of pixel arrays, which has four color filters arranged in an array. The color of the neighboring color filters is distinct to each other. Moreover, the pattern of the color filter array has enlarged color filters or extended edges in corners of the pattern. These enlarged color filters or extended edges increase the contact area between the pattern and a substrate that the pattern formed on. Therefore, the adhesion strength between the pattern and the substrate can be augmented to prevent peeling from the substrate. According to the invention, the yield of the product will be raised substantially.

Abstract: A dynamic puddle developing process is disclosed. First, a semiconductor substrate having a photoresist disposed thereon is provided, in which the photoresist has been exposed. Next, a developer is disposed on the surface of the photoresist and a first static puddle process is performed to maintain the semiconductor substrate in a static status within a first time interval. A rotating puddle process is performed thereafter to generate a first rotating speed for the semiconductor substrate, and a second static puddle process is performed to maintain the semiconductor substrate in a static status within a second time interval. Next, a rinsing process is performed to rinse the semiconductor substrate and remove the developer from the surface of the photoresist.

Abstract: A method for reducing hole defects in the polysilicon layer. The method at least includes the following steps. First of all, a semiconductor substrate is provided, a polysilicon layer is formed over the semiconductor substrate. Then, no hole defects bottom anti-reflective coating process is performed, wherein the no hole defect bottom anti-reflective coating process is selected from the group consisting of dehydration baking, hydrophobic solvent treatment, and steady baking. Finally, a bottom anti-reflective coating is formed over the polysilicon layer.

Abstract: A method for reducing hole defects in the polysilicon layer. The method at least includes the following steps. First of all, a semiconductor substrate is provided, a polysilicon layer is formed over the semiconductor substrate. Then, no hole defects bottom anti-reflective coating process is performed, wherein the no hole defect bottom anti-reflective coating process is selected from the group consisting of dehydration baking, hydrophobic solvent treatment, and steady baking. Finally, a bottom anti-reflective coating is formed over the polysilicon layer.