Abstract: The present invention provides a method for managing memory space in an electronic device including: selecting a candidate page from a first memory space for swapping the candidate page out of the first memory space into the second memory space; compressing the candidate page to obtain a first compressed page and a first hash value of the first compressed page; performing a comparison using the first hash value of the first compressed page and the hash values of the pages stored in a second memory space to find whether the pages have the same content as the first compressed page or the candidate page; and if a page is found to have the same content as the first compressed page or the candidate page, mapping a virtual address of the first compressed page or the candidate page to the found page.

Abstract: An efficient, on-demand, content-based memory sharing method is performed by a system. The method begins when an event is detected. The system predicts a merge gain based on a current number of candidate pages in the memory, a current number of merged pages, and a merge ratio which represents a merged-to-candidate page ratio. In response to a determination that the merge gain is greater than a threshold, the system performs a scan and merge operation to merge a set of the candidate pages, which have a same content and have not been merged, into a single page having the same content.

Abstract: Methods and apparatuses pertaining to dynamic memory sharing may involve sharing a first portion of a memory associated with a first module for use by a second module. The first portion of the memory may be reclaimed for use by the first module in real time upon a determination that there is an increase in demand for the memory by the first module that requires reclamation, such that the first module begins to use the first portion of the memory before the second module finishes a process of aborting to use the first portion of the first memory.

Abstract: The present invention provides a method for managing memory space in an electronic device including: selecting a candidate page from a first memory space for swapping the candidate page out of the first memory space into the second memory space; compressing the candidate page to obtain a first compressed page and a first hash value of the first compressed page; performing a comparison using the first hash value of the first compressed page and the hash values of the pages stored in a second memory space to find whether the pages have the same content as the first compressed page or the candidate page; and if a page is found to have the same content as the first compressed page or the candidate page, mapping a virtual address of the first compressed page or the candidate page to the found page.

Abstract: Techniques and implementations pertaining to a heterogeneous swap space with dynamic thresholds are provided. A technique may provide a list of a plurality of swap areas in a heterogeneous swap space. The swap areas may include at least two swap areas that are different from each other in one or more characteristics. The technique may also compute a dynamic threshold associated with a page in need of swapping and determine a priority level of the page in need of swapping based on the dynamic threshold. The technique may further select one of the swap areas from the list of swap areas for the swapping of the page in response to a determination of the priority level of the page.

Abstract: This invention provides an upgrading device using bootloader in wireless sensor networks which is installed at a wireless sensor. The wireless sensor is connected to a host terminal, which is characterized by comprising: a hardware initialization device for initializing the condition of the hardware while the sensor is on or reset; a wireless device driving device for providing wireless communication ability to the bootloader; and a difference algorithm decoding device, comprising at least one difference algorithm, for decoding and rebuilding the script file which is received.

Abstract: An improved semiconductor device is disclosed with a NMOS transistor formed on a P-Well in a deep N-well, a PMOS transistor formed on a N-Well in the deep N-well, a first voltage coupled to a source node of the PMOS, and a second voltage higher than the first voltage coupled to the N-well, wherein the second voltage expands a depletion region associated with the PMOS and NMOS transistor for absorbing electrons and holes caused by alien particles.

Abstract: An improved semiconductor device is disclosed with a NMOS transistor formed on a P-Well in a deep N-well, a PMOS transistor formed on a N-Well in the deep N-well, a first voltage coupled to a source node of the PMOS, and a second voltage higher than the first voltage coupled to the N-well, wherein the second voltage expands a depletion region associated with the PMOS and NMOS transistor for absorbing electrons and holes caused by alien particles.