Patents by Inventor Chung-Jwu Chen

Chung-Jwu Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130311700
    Abstract: A non-volatile memory apparatus includes non-volatile memory having a user block and a reserved block, a first connector for connecting to a host device, at least one second connector for connecting to a storage medium, and a first controller connected to the non-volatile memory, the first connector and the at least one second connector. Memory blocks of the storage medium are used as extra reserved blocks for the non-volatile memory apparatus. The first controller controls and remaps the user blocks and reserved blocks of the non-volatile memory, and the memory blocks of the storage medium.
    Type: Application
    Filed: May 20, 2012
    Publication date: November 21, 2013
    Inventor: Chung-Jwu Chen
  • Patent number: 8189404
    Abstract: A storage device includes a control unit, a first voltage supply unit for supplying a first working voltage to the control unit, N memory units, a second voltage supply unit for supplying a second working voltage to each memory unit, a logic gate, a first voltage detecting unit and a second voltage detecting unit. Once the first voltage detecting unit detects that the first working voltage of the control unit is abnormal, the logic gate outputs a first write protect signal to notify the control unit and control the memory units to enter a write protect mode. Once the second voltage detecting unit detects that the second working voltage of one or more memory units is abnormal, the logic gate outputs a second write protect signal to notify the control unit and control the one or more memory units to enter the write protect mode.
    Type: Grant
    Filed: August 25, 2010
    Date of Patent: May 29, 2012
    Assignee: Transcend Information, Inc.
    Inventors: Fu-Yin Huang, Chung-Jwu Chen, Tsang-Yi Chen, Chih-Heng Chiu, Chung-Won Shu
  • Publication number: 20120026796
    Abstract: A storage device includes a control unit, a first voltage supply unit for supplying a first working voltage to the control unit, N memory units, a second voltage supply unit for supplying a second working voltage to each memory unit, a logic gate, a first voltage detecting unit and a second voltage detecting unit. Once the first voltage detecting unit detects that the first working voltage of the control unit is abnormal, the logic gate outputs a first write protect signal to notify the control unit and control the memory units to enter a write protect mode. Once the second voltage detecting unit detects that the second working voltage of one or more memory units is abnormal, the logic gate outputs a second write protect signal to notify the control unit and control the one or more memory units to enter the write protect mode.
    Type: Application
    Filed: August 25, 2010
    Publication date: February 2, 2012
    Inventors: Fu-Yin Huang, Chung-Jwu Chen, Tsang-Yi Chen, Chih-Heng Chiu, Chung-Won Shu