Patents by Inventor Chung-Ker Yeh

Chung-Ker Yeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PIP capacitor for split-gate flash process
    Patent number: 6674118
    Abstract: A PIP (Poly-Interpoly-Poly) capacitor with high capacitance is provided in a split-gate flash memory cell. A method is also disclosed to form the same PIP capacitor where the bottom and top plates of the capacitor are formed simultaneously with the floating gate and control gate, respectively, of the split-gate flash memory cell. Furthermore, the thin interpoly oxide of the cell, rather than the thick poly-oxide over the floating gate is used as the insulator between the plates of the capacitor. The resulting capacitor yields high storage capacity through high capacitance per unit area.
    Type: Grant
    Filed: June 8, 2001
    Date of Patent: January 6, 2004
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Chung-Ker Yeh, Hung-Cheng Sung, Di-Son Kuo, Chia-Ta Hsieh, Yai-Fen Lin
  • PIP capacitor for split-gate flash process
    Publication number: 20010026973
    Abstract: A PIP (Poly-Interpoly-Poly) capacitor with high capacitance is provided in a split-gate flash memory cell. A method is also disclosed to form the same PIP capacitor where the bottom and top plates of the capacitor are formed simultaneously with the floating gate and control gate, respectively, of the split-gate flash memory cell. Furthermore, the thin interpoly oxide of the cell, rather than the thick poly-oxide over the floating gate is used as the insulator between the plates of the capacitor. The resulting capacitor yields high storage capacity through high capacitance per unit area.
    Type: Application
    Filed: June 8, 2001
    Publication date: October 4, 2001
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
    Inventors: Chung-Ker Yeh, Hung-Cheng Sung, Di-Son Kuo, Chia-Ta Hsieh, Yai-Fen Lin
  • PIP capacitor for split-gate flash process
    Patent number: 6277686
    Abstract: A PIP (Poly-Interpoly-Poly) capacitor with high capacitance is provided in a split-gate flash memory cell. A method is also disclosed to form the same PIP capacitor where the bottom and top plates of the capacitor are formed simultaneously with the floating gate and control gate, respectively, of the split-gate flash memory cell. Furthermore, the thin interpoly oxide of the cell, rather than the thick poly-oxide over the floating gate is used as the insulator between the plates of the capacitor. The resulting capacitor yields high storage capacity through high capacitance per unit area.
    Type: Grant
    Filed: July 6, 1999
    Date of Patent: August 21, 2001
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Chung-Ker Yeh, Hung-Cheng Sung, Di-Son Kuo, Chia-Ta Hsieh, Yai-Fen Lin