Abstract: The storage layer such as a nitride layer of a nonvolatile memory cell has two storage parts storing separately addressable data, typically respectively proximate to the source terminal and the drain terminal. The applied drain voltage while sensing the data of one of the storage parts depends on the data stored at the other storage part. If the data stored at the other storage part is represented by a threshold voltage exceeding a minimum threshold voltage, then the applied drain voltage is raised. This technology is useful in read operations and program verify operations to widen the threshold voltage window.

Abstract: A sense amplifier system and sensing method thereof are provided. The proposed sense amplifier system includes plural sense amplifiers, each of which includes a first switch having a first terminal, a second terminal, and a bulk terminal electrically connected to the first terminal, a second switch having a first terminal electrically connected to the second terminal of the first switch, a second terminal, and a bulk terminal, a third switch having a first terminal electrically connected to the first terminal of the second switch, a second terminal, and a bulk terminal electrically connected to the bulk terminal of the second switch, and a fourth switch having a first terminal electrically connected to the bulk terminal of the first switch and a second terminal electrically connected to the bulk terminal of the third switch.

Abstract: The clock circuit of an integrated circuit operates with variations such as temperature, ground noise, and power noise. Various aspects of an improved clock integrated circuit address one or more of the variations in temperature, ground noise, and power noise.

Abstract: The configurations of a flash memory having a read tracking clock and method thereof are provided. The proposed flash memory includes a first and a second storage capacitors, a first current source providing a first current flowing through the first storage capacitor, a second current source providing a second current flowing through the second storage capacitor, and a comparator electrically connected to the first and the second current sources, and sending out a signal indicating a developing time being accomplished when the second current is larger than the first current.

Abstract: The clock circuit of an integrated circuit operates with tolerance of variation in power. A compensation circuit is powered by a supply voltage. The compensation circuit generates a compensated voltage reference, which is compensated for variation in the supply voltage. The compensated voltage reference is compared by comparison circuitry against an output of timing circuitry, to determine timing of the clock signal.

Abstract: A memory access method is applied in a memory controller for accessing a memory array, including a number of respective select switches globally controlled with a string select signal. The memory access method includes: enabling the string select signal and disabling the string select signal before a read phase.

Abstract: The clock circuit of an integrated circuit operates with variations such as temperature, ground noise, and power noise. Various aspects of an improved clock integrated circuit address one or more of the variations in temperature, ground noise, and power noise.

Abstract: A sense amplifier system and sensing method thereof are provided. The proposed sense amplifier system includes plural sense amplifiers, each of which includes a first switch having a first terminal, a second terminal, and a bulk terminal electrically connected to the first terminal, a second switch having a first terminal electrically connected to the second terminal of the first switch, a second terminal, and a bulk terminal, a third switch having a first terminal electrically connected to the first terminal of the second switch, a second terminal, and a bulk terminal electrically connected to the bulk terminal of the second switch, and a fourth switch having a first terminal electrically connected to the bulk terminal of the first switch and a second terminal electrically connected to the bulk terminal of the third switch.

Abstract: A smart radio system includes a mobile device and a radio device. The mobile device includes a signal processing module for processing a received signal to be outputted as a processed result or processing signals generated by a signal source to be a transmission signal; a user interface for generating a control signal; and a first transmission module for receiving the received signal to be transmitted to the signal processing module or outputting the transmission signal according to the control signal. The radio device includes a real-time communication module for receiving the received signal or transmitting the transmission signal via wireless transmission; and a second transmission module for transmitting the transmission signal outputted by the first transmission module to the real-time communication module or transmitting the received signal received by the real-time communication module to the first transmission module.

Abstract: A memory array is characterized by a threshold definition, which includes threshold voltage ranges representing data values stored by a part of the memory array, and a set of sense windows separating the threshold voltage ranges. The threshold definition is varied, responsive to at least one of program operations and erase operations. Such operations change a distribution of the data values stored in the memory group.

Abstract: A memory device comprises a main memory array having a plurality of bit lines, and a select array having a plurality of transistors coupled to the bit lines. Wherein one of the plurality of transistors is electrically programmed to a threshold voltage greater than a threshold voltage of another one of the plurality of transistors.

Abstract: A memory element in which the temperature coefficient of a memory cell substantially matches the temperature coefficient of a reference cell and tuning either the temperature coefficient of a memory cell to substantially match the temperature coefficient of the reference cell provides for improved precision of sensing or reading memory element states, particularly so as to minimize the affect of temperature variations on reading and sensing states.

Abstract: A method for programming a memory cell of a memory device includes the following steps. A plurality of cycle number ranges are set up. A specific one of the plurality of cycle number ranges, in which the memory cell having a drain terminal passes a program-verification, is determined. A bias voltage is applied to the drain terminal for programming the memory cell, wherein the bias voltage varies with the specific cycle number range.

Abstract: A current source providing an output current with a fixed current range includes a bias circuit, a resistor, a current mirror, and a controller. The bias circuit provides a first voltage weighted with a first tunable coefficient and a second voltage weighted with a second tunable coefficient. The resistor has a tunable resistance for determining a bias current according to a voltage difference between the first and the second voltages and the tunable resistance. The current mirror generates the output current according to the bias current. The controller adjusts the tunable resistance and one of the first and the second tunable coefficients to achieve a voltage-current coefficient with different values, while the bias current and the output current are kept within a fixed current range.

Abstract: The clock circuit of an integrated circuit operates with tolerance of variation in power. A compensation circuit is powered by a supply voltage. The compensation circuit generates a compensated voltage reference, which is compensated for variation in the supply voltage. The compensated voltage reference is compared by comparison circuitry against an output of timing circuitry, to determine timing of the clock signal.

Abstract: The clock circuit of an integrated circuit operates with variations such as temperature, ground noise, and power noise. Various aspects of an improved clock integrated circuit address one or more of the variations in temperature, ground noise, and power noise.

Abstract: A memory access method is applied in a memory controller for accessing a memory array, including a number of respective select switches globally controlled with a string select signal. The memory access method includes: enabling the string select signal and disabling the string select signal before a read phase.

Abstract: The clock circuit of an integrated circuit operates with variations such as temperature, ground noise, and power noise. Various aspects of an improved clock integrated circuit address one or more of the variations in temperature, ground noise, and power noise.

Abstract: A bit line bias circuit of a memory architecture includes a varying voltage drop. In some embodiments, the voltage drop can depend on the threshold voltage of the memory cell selected to be read, or on the sense current flowing through the memory cell selected to be read.

Abstract: A memory access method is applied in a memory controller for accessing an NAND memory array, including a number of respective select switches globally controlled with a string select signal. The memory access method includes the following steps. A stream bias signal and a selected word line signal are respectively provided on a selected stream and on a selected cell of the selected stream, and the rest of memory cells are turned on as pass transistors, in the setup phase. A discharge path is provided to eliminate coupling charge presented on unselected streams, in the setup phase. Then, the string select signal is enabled to have the selected stream connected to a sense unit via a metal bit line and according read the selected cell in a voltage sensing scheme, in a read phase, which does not overlap with the setup phase.