Abstract: A semiconductor may include an active region, an epitaxial source/drain formed in and extending above the active region, and a first dielectric layer formed over a portion of the active region. The semiconductor may include a first metal gate and a second metal gate formed in the first dielectric layer, a second dielectric layer formed over the first dielectric layer and the second metal gate, and a titanium layer, without an intervening fluorine residual layer, formed on the metal gate and the epitaxial source/drain. The semiconductor may include a first metal layer formed on top of the titanium on the first metal gate, a second metal layer formed on top of the titanium layer on the epitaxial source/drain, and a third dielectric layer formed on the second dielectric layer. The semiconductor may include first and second vias formed in the third dielectric layer.

Abstract: In an embodiment, a device includes: an integrated circuit die; an encapsulant at least partially surrounding the integrated circuit die, the encapsulant including fillers having an average diameter; a through via extending through the encapsulant, the through via having a lower portion of a constant width and an upper portion of a continuously decreasing width, a thickness of the upper portion being greater than the average diameter of the fillers; and a redistribution structure including: a dielectric layer on the through via, the encapsulant, and the integrated circuit die; and a metallization pattern having a via portion extending through the dielectric layer and a line portion extending along the dielectric layer, the metallization pattern being electrically coupled to the through via and the integrated circuit die.

Abstract: Some implementations described herein include systems and techniques for fabricating a wafer-on-wafer product using a filled lateral gap between beveled regions of wafers included in a stacked-wafer assembly and along a perimeter region of the stacked-wafer assembly. The systems and techniques include a deposition tool having an electrode with a protrusion that enhances an electromagnetic field along the perimeter region of the stacked-wafer assembly during a deposition operation performed by the deposition tool. Relative to an electromagnetic field generated by a deposition tool not including the electrode with the protrusion, the enhanced electromagnetic field improves the deposition operation so that a supporting fill material may be sufficiently deposited.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a first and second transistors arranged over a substrate. The first transistor includes first channel structures extending between first and second source/drain regions. A first gate electrode is arranged between the first channel structures, and a first protection layer is arranged over a topmost one of the first channel structures. The second transistor includes second channel structures extending between the second source/drain region and a third source/drain region. A second gate electrode is arranged between the second channel structures, and a second protection layer is arranged over a topmost one of the second channel structures. The integrated chip further includes a first interconnect structure arranged between the substrate and the first and second channel structures, and a contact plug structure coupled to the second source/drain region and arranged above the first and second gate electrodes.

Abstract: A power supply with a separable communication module includes a casing with a port; a main board placed in the casing and having a power conversion circuit; a sub-board electrically connected to the power conversion circuit and provided with at least one first connector; and a communication module. The power conversion circuit has at least one electrical connection terminal. A first interface of the first connector faces the port. The communication module includes a first circuit board and a communication circuit disposed on the first circuit board, the first circuit board has an electrical connection part electrically connected to the communication circuit, the electrical connection part has a first state of connecting with the first interface, and a second state of detaching from the first interface.

Abstract: A power supply comprises a casing with a port; a main board placed in the casing and having a power conversion circuit; a sub-board electrically connected to the power conversion circuit and provided with at least one first connector; and a communication module. The power conversion circuit has at least one electrical connection terminal. A first interface of the first connector faces the port. The communication module comprises a first circuit board and a communication circuit disposed on the first circuit board, the first circuit board has an electrical connection part electrically connected to the communication circuit, the electrical connection part has a first state of connecting with the first interface so that the communication module and the power conversion circuit are electrically connected, and a second state of detaching from the first interface so that the communication module is separated from and electrically disconnected with the sub-board.