Abstract: A method for cleaning a reaction chamber having a pedestal and a carrier ring is provided. First, the pedestal and the carrier ring are cleaned with a high pressure gas. Next, the carrier ring is moved to leave the pedestal, and a low pressure gas is provided to clean the pedestal, the carrier ring, and an area lay between the pedestal and the carrier ring. Thereafter, a full flush is performed to clean the pedestal and the carrier ring.

Abstract: Provided herein is a method of photographing in a camera having a flash and a distance measurement unit to measure a distance from the camera to the object, which includes determining whether instructions to perform consecutive photograph are given, measuring a distance from the camera to the object, if consecutive shooting instructions are given, and determining a flash trigger time according to the result of measuring the distance, emitting a flash for the determined flash trigger time while photographing is performed, and performing the measurement and determination operation, if consecutive shooting is not completed.

Abstract: A digital camera and method is provided that measures an ambient illumination in response to the shutter signal, performs preliminary light emission when the measured ambient illumination is less than a first reference value, delays main light emission by a predetermined time after the preliminary light emission, performs the main light emission after the predetermined time has lapsed, acquires image data during the main light emission, and processes the acquired image data.

Abstract: Provided herein is a method of photographing in a camera having a flash and a distance measurement unit to measure a distance from the camera to the object, which includes determining whether instructions to perform consecutive photograph are given, measuring a distance from the camera to the object, if consecutive shooting instructions are given, and determining a flash trigger time according to the result of measuring the distance, emitting a flash for the determined flash trigger time while photographing is performed, and performing the measurement and determination operation, if consecutive shooting is not completed.

Abstract: A necktie wearing device includes a support plate (1) having a curved shape corresponding to the front surface of a necktie knot, a magnet (3) mounted in the center of the support plate, a rod-shaped lifting plate (2) connected to the support plate by using strings (5) connected to both ends of the support plate, and a case (4) provided on one side of the support plate (1), which case has a magnet (3) therein. The device further includes a knot unit (7) made of a fiber and having a necktie knot shape, a space (8) being formed in the knot unit for insertion of the support plate (1), and a necktie drawing hole (9) being formed at the lower end of the knot unit. This necktie-wearing device enables a user to wear various kinds of neckties in an easier and more convenient way and allows a wearer to adjust the length of the necktie as desired.

Abstract: A necktie wearing device includes a support plate (1) having a curved shape corresponding to the front surface of a necktie knot, a magnet (3) mounted in the center of the support plate, a rod-shaped lifting plate (2) connected to the support plate by using strings (5) connected to both ends of the support plate, and a case (4) provided on one side of the support plate (1), which case has a magnet (3) therein. The device further includes a knot unit (7) made of a fiber and having a necktie knot shape, a space (8) being formed in the knot unit for insertion of the support plate (1), and a necktie drawing hole (9) being formed at the lower end of the knot unit. This necktie-wearing device enables a user to wear various kinds of neckties in an easier and more convenient way and allows a wearer to adjust the length of the necktie as desired.

Abstract: A (GaAs-resident) application specific monolithic microwave integrated circuit (ASMMIC) is fabricated through the use of footprints that include a portion of the metallization through which the circuit components within the wafer are to be interconnected. The metallization is a three layers structure, the first two layers of which include strategically arranged reactance circuit components (MIM) capacitors. A first of the three metal layers is formed on a first surface of the substrate which contains a plurality of semiconductor device regions and conductive material for ohmic contact to the regions, so that portions of the first metal layer are in ohmic contact with the conductive material. The first metal layer provides the bottom plate of the MIM capacitors. A dielectric layer, which serves as the dielectric insulator of the MIM capacitors, is formed on second portions of the first metal layer.

Abstract: The present invention contemplates a novel enamel composition, a novel electrodeposition bath, a novel metal substrate for enameling, and the novel PEMS produced from these materials and procedures. In general, the novel glass composition of the present invention are within the following composition ranges (which are set forth in percent by weight).______________________________________ SiO.sub.2 9-16% B.sub.2 O.sub.3 20-25% MoO.sub.3 2-10% MgO 30-40% BaO 16-22% ZnO 5-14% SnO.sub.2 0-4% ______________________________________In the novel application method of the present invention, an improved electrophoretic bath has been found in which the glass particles are suspended in a mixture of isopropyl alcohol and either dichloromethane or trichlorotrifluoroethane together with ethylene glycol and an acrylic additive. Stainless steel electroplated with a thin film of molybdenum and heat-treated at an elevated temperature is employed as the substrate.

Abstract: A (GaAs-resident) application specific monolithic microwave integrated circuit (ASMMIC) is fabricated through the use of footprints that include a portion of the metallization through which the circuit components within the wafer are to be interconnected. The metallization is a three layers structure, the first two layers of which include strategically arranged reactance circuit components (MIM) capacitors. A first of the three metal layers is formed on a first surface of the substrate which contains a plurality of semiconductor device regions and conductive material for ohmic contact to the regions, so that portions of the first metal layer are in ohmic contact with the conductive material. The first metal layer provides the bottom plate of the MIM capacitors. A dielectric layer, which serves as the dielectric insulator of the MIM capacitors, is formed on second portions of the first metal layer.