Abstract: A process tube device can detect the presence of any external materials that may reside within a fluid flowing in the tube. The process tube device detects the external materials in-situ which obviates the need for a separate inspection device to inspect the surface of a wafer after applying fluid on the surface of the wafer. The process tube device utilizes at least two methods of detecting the presence of external materials. The first is the direct measurement method in which a light detecting sensor is used. The second is the indirect measurement method in which a sensor utilizing the principles of Doppler shift is used. Here, contrary to the first method that at least partially used reflected or refracted light, the second method uses a Doppler shift sensor to detect the presence of the external material by measuring the velocity of the fluid flowing in the tube.

Abstract: Some implementations described herein provide techniques and apparatuses for a semiconductor processing tool including an electrostatic chuck having a voltage-regulation system to regulate an electrical potential throughout regions of a semiconductor substrate positioned above the electrostatic chuck. The voltage-regulation system may determine that an electrical potential within a region of the semiconductor substrate does not satisfy a threshold. The voltage-regulation system may, based on determining that the electrical potential throughout the region does not satisfy the threshold, position one or more electrically-conductive pins within the region. While positioned within the region, the one or more electrically-conductive pins may change the electrical potential of the region.

Abstract: Embodiments described herein generally relate to sub-pixel circuits that may be utilized in a display such as an organic light-emitting diode (OLED) display. The device includes substrate, pixel-defining layer (PDL) structures disposed over the section of the substrate, inorganic or metal overhang structures disposed on an upper surface of the PDL structures, and a plurality of sub-pixels. The PDL structures include a trench disposed in the top surface of the PDL structure. Each sub-pixel includes an anode, an OLED material disposed over and in contact with the anode, and a cathode disposed over the OLED material. The inorganic or metal overhang structures have an overhang extension that extends laterally over the trench. An encapsulation layer is disposed over the cathode and extends under at least a portion of the inorganic or metal overhang structures and along a top surface of the PDL structures.

Abstract: A vision inspection and correction method, which uses an image adjustment software/device to separate the eyes of the inspected person on an independent display screen, and the visual mark seen by the same vision is designed to be misaligned; through the guidance and interaction of the inspector and the inspected person, the inspector can adjust the image operation to zoom in or out, shift, focus, diverge, and rotate, etc., so that the inspected person's binocular images can be clearly distinguished and adjusted. Then, the binocular images are aligned, and the inspector will implant the correction parameters during the image adjustment process into 3D projectors, VR (virtual reality), AR (augmented reality device), MR hybrid reality device and other equipment to adjust the binocular digital image parameters, so users have, or can provide to a lens maker, personalized adjustment for comfortable images of both eyes.

Abstract: Some implementations described herein provide techniques and apparatuses for a semiconductor processing tool including an electrostatic chuck having a voltage-regulation system to regulate an electrical potential throughout regions of a semiconductor substrate positioned above the electrostatic chuck. The voltage-regulation system may determine that an electrical potential within a region of the semiconductor substrate does not satisfy a threshold. The voltage-regulation system may, based on determining that the electrical potential throughout the region does not satisfy the threshold, position one or more electrically-conductive pins within the region. While positioned within the region, the one or more electrically-conductive pins may change the electrical potential of the region.

Abstract: An interface of integrated circuit (IC) die includes a plurality of the contact elements formed as a contact element pattern corresponding to a parallel bus. The contact elements are arranged in an array of rows and columns and divided into a transmitting group and a receiving group. The contact elements of the transmitting group have a first contact element sequence and the contact elements of the receiving group have a second contact element sequence, the first contact element sequence is identical to the second contact element sequence. The contact elements with the first contact element sequence and the second contact element sequence are matched when the contact element pattern is geometrically rotated by 180° with respect to a row direction and a column direction.

Abstract: Some implementations described herein provide techniques and apparatuses for a semiconductor processing tool including an electrostatic chuck having a voltage-regulation system to regulate an electrical potential throughout regions of a semiconductor substrate positioned above the electrostatic chuck. The voltage-regulation system may determine that an electrical potential within a region of the semiconductor substrate does not satisfy a threshold. The voltage-regulation system may, based on determining that the electrical potential throughout the region does not satisfy the threshold, position one or more electrically-conductive pins within the region. While positioned within the region, the one or more electrically-conductive pins may change the electrical potential of the region.

Abstract: A method includes forming a first etch stop layer (ESL) over a conductive feature, forming a first dielectric layer on the first ESL, forming a second ESL on the first dielectric layer, forming a second dielectric layer on the second ESL, forming a trench in the second dielectric layer, forming a first opening in a bottom surface of the trench extending through the second dielectric layer, and forming a second opening in a bottom surface of the first opening. The second opening extends through the first dielectric layer and the first ESL. The second opening exposes a top surface of the conductive feature. The method further includes widening the first opening to a second width, filling the trench with a conductive material to form a conductive line, and filling the second opening and the first opening with the conductive material to form a conductive via.

Abstract: A method for manufacturing reflective structure is provided. The method includes the operations as follows. A metallization structure is received. A plurality of conductive pads are formed over the metallization structure. A plurality of dielectric stacks are formed over the conductive pads, respectively, wherein the thicknesses of the dielectric stacks are different. The dielectric stacks are isolated by forming a plurality of trenches over a plurality of intervals between each two adjacent dielectric stacks.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed. An exemplary method comprises forming a first stack structure and a second stack structure in a first area over a substrate, wherein each of the stack structures includes semiconductor layers separated and stacked up; depositing a first interfacial layer around each of the semiconductor layers of the stack structures; depositing a gate dielectric layer around the first interfacial layer; forming a dipole oxide layer around the gate dielectric layer; removing the dipole oxide layer around the gate dielectric layer of the second stack structure; performing an annealing process to form a dipole gate dielectric layer for the first stack structure and a non-dipole gate dielectric layer for the second stack structure; and depositing a first gate electrode around the dipole gate dielectric layer of the first stack structure and the non-dipole gate dielectric layer of the second stack structure.

Abstract: The present disclosure provides a display device, including first to fourth LEDs, a line structure, and first to fourth lines. The second LED is arranged in a first direction corresponding to the first LED. The fourth LED is arranged in a second direction corresponding to the third LED. The line structure includes first to third line segments. The first line is coupled to the first LED. The second line is coupled to the second LED. The third line is coupled to the third LED. The fourth line is coupled to the fourth LED. A portion of the first line and a portion of the second line are in parallel with the first line segment, a portion of the third line is in parallel with the second line segment, and a portion of the fourth line is in parallel with the third line segment.

Abstract: A combination mounting bracket for an information handling system includes a main bracket and an adjustable bracket. The main bracket is securely mounted on a display device of the information handling system. The adjustable bracket includes a mounting surface and multiple standoffs. The mounting surface is configured to be placed in physical communication with a stand for the display device. The standoffs are in physical communication with the mounting surface and with the main bracket. The standoffs are configured to transition between an extended position and a compressed position.

Abstract: Example implementations relate to electrical traces on panels. In some examples, a display can include an on-cell touch (OCT) panel, a cover panel, and an electrical trace located on the cover panel, where the cover panel is a glass panel and the electrical trace is to transmit a signal from a component to a processor.

Abstract: A cooling module includes a thermally conductive plate and a heat pipe. The thermally conductive plate includes a groove having two inner walls that are opposite to each other, a first upper protrusion protrusively located on the plate body and the first inner wall, a second upper protrusion protrusively located on the plate body and the second inner wall, a first lower protrusion protrusively located on the first inner wall, and a second lower protrusion protrusively located on the second inner wall. The heat pipe is located in the groove, and cooperatively secured by the first upper protrusion, the second upper protrusion, the first lower protrusion and the second lower protrusion.

Abstract: A system and method of instant-messaging bot that provide a chatbot and human agents working in accord in communicating with users over a public instant-messaging (IM) platform includes a chatbot application and an IM platform, both built for an enterprise. The enterprise IM platform is connected to the chatbot application and separately connected to one or more public IM platforms via the Internet. The chatbot application contains software for receiving, processing, analyzing and responding to human-generated messages in a human-like manner. The enterprise IM platform contains software for managing traffic of IM messages exchanged among the chatbot, one or more human agents connected to the enterprise IM platform, and any user connected to one of the public IM platforms.

Abstract: A system and method of instant-messaging bot that provide a chatbot and human agents working in accord in communicating with users over a public instant-messaging (IM) platform includes a chatbot application and an IM platform, both built for an enterprise. The enterprise IM platform is connected to the chatbot application and separately connected to one or more public IM platforms via the Internet. The chatbot application contains software for receiving, processing, analyzing and responding to human-generated messages in a human-like manner. The enterprise IM platform contains software for managing traffic of IM messages exchanged among the chatbot, one or more human agents connected to the enterprise IM platform, and any user connected to one of the public IM platforms.

Abstract: A system and method for managing change in software systems and applications manages change for both transient and persistent objects in a domain independent, non-intrusive, object-oriented fashion. The system and method are designed and implemented as a combination of two abstract machines consisting of a set of inter-face functions visible to the application, and an internal or private state which is hidden from such application. Applications use the interface functions to obtain the services of this change management system and method. Since the internal state of such system and method is outside the application, change management is provided as a service without the need for altering or adding onto application data structures and interfaces.

Abstract: A system (20) and method for managing change in software systems and applications manages change for both transient and persistent objects in a domain independent, non-intrusive, object-oriented fashion. The system (20) and method are designed and implemented as a combination of two abstract machines (22,24) consisting of a set of interface functions (25,26) visible to the application, and an internal or private state (27,28) which is hidden from such application. Applications use the interface functions (25,26) to obtain the services of this change management system (20) and method. Since the internal state of such system (20) and method is outside the application, change management is provided as a service without the need for altering or adding onto application data structures and interfaces.