Abstract: A memory cell structure includes a transistor structure and a capacitor structure, where the capacitor structure includes a hydrogen absorption layer. The hydrogen absorption layer absorbs hydrogen, which prevents or reduces the likelihood of the hydrogen diffusing into an underlying metal-oxide channel of the transistor structure. In this way, the hydrogen absorption layer minimizes and/or reduces the likelihood of hydrogen contamination in the metal-oxide channel, which may enable a low current leakage to be achieved for the memory cell structure and reduces the likelihood of data corruption and/or failure of the memory cell structure, among other examples.

Abstract: A film deposition method for an optical component is used to balance two side film stresses of a substrate. A predetermined number of layers of films is deposited on an upper side of the substrate, and then layers of films with similar thickness are deposited on a lower side of the substrate to balance side film stresses of the substrate.

Abstract: The present invention describes a color filter fabrication method. According to the present invention, a removable mask and a substrate are placed in a vacuum evaporator. The removable mask is used to cover partially the substrate and expose the region where the first color dielectric layer forms. When finishing this evaporating process, the removable mask is rotated and moved to the next position, exposing another region where the second color dielectric layer is to be formed by the next evaporating process.

Abstract: A film deposition method for an optical component is used to balance two side film stresses of a substrate. A predetermined number of layers of films is deposited on an upper side of the substrate, and then layers of films with similar thickness are deposited on a lower side of the substrate to balance side film stresses of the substrate.