Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first dielectric feature extending along a first direction, the first dielectric feature comprising a first dielectric layer having a first sidewall and a second sidewall opposing the first sidewall, a first semiconductor layer disposed adjacent the first sidewall, the first semiconductor layer extending along a second direction perpendicular to the first direction, a second dielectric feature extending along the first direction, the second dielectric feature disposed adjacent the first semiconductor layer, and a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, and a portion of the first gate electrode layer is exposed to a first air gap.

Abstract: A fibrinolytic enzyme isolated from a culture broth of a mushroom has a characteristic of degrading a fibrin and a fibrinogen without activating an activity of a plasminogen. The plasminogen is activated to generate a plasmin to degrade the fibrin and/or fibrinogen, so that the fibrinolytic enzyme be used for the thrombosis-related diseases to degrade the fibrin and fibrinogen of blood clots without activate the plasminogen, so as to avoid a hemorrhage due to the over activation the plasminogen to over generate the plasmin.