Patents by Inventor Chung Lung Cheng

Chung Lung Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11996630
    Abstract: An antenna structure includes a ground element, a first radiation element, a second radiation element, a third radiation element, and a nonconductive support element. The first radiation element is coupled to a first grounding point on the ground element. The second radiation element has a feeding point. The second radiation element is adjacent to the first radiation element. The third radiation element is coupled to a second grounding point on the ground element. The third radiation element is adjacent to the second radiation element. The first radiation element, the second radiation element, and the third radiation element are disposed on the nonconductive support element. The second radiation element is at least partially surrounded by the first radiation element. The third radiation element is at least partially surrounded by the second radiation element.
    Type: Grant
    Filed: September 2, 2022
    Date of Patent: May 28, 2024
    Assignee: QUANTA COMPUTER INC.
    Inventors: Yu-Chen Zhao, Chung-Ting Hung, Chin-Lung Tsai, Ying-Cong Deng, Kuan-Hsien Lee, Yi-Chih Lo, Kai-Hsiang Chang, Chun-I Cheng, Yan-Cheng Huang
  • Patent number: 11996633
    Abstract: A wearable device includes a ground element, a first radiation element, a second radiation element, a third radiation element, a fourth radiation element, and a fifth radiation element. The first radiation element has a feeding point, and is coupled to a first grounding point on the ground element. A slot region is surrounded by the first radiation element and the ground element. The second radiation element is coupled to a second grounding point on the ground element. The third radiation element is coupled to the second grounding point. The third radiation element and the second radiation element substantially extend in opposite directions. The fourth radiation element and the fifth radiation element are disposed inside the slot region. An antenna structure is formed by the first radiation element, the second radiation element, the third radiation element, the fourth radiation element, and the fifth radiation element.
    Type: Grant
    Filed: September 6, 2022
    Date of Patent: May 28, 2024
    Assignee: QUANTA COMPUTER INC.
    Inventors: Chun-I Cheng, Chung-Ting Hung, Chin-Lung Tsai, Kuan-Hsien Lee, Yu-Chen Zhao, Kai-Hsiang Chang
  • Publication number: 20080011744
    Abstract: A case, such as a suitcase or a photo case, for holding an object at an exterior thereof includes a case body and a hinge edge frame arrangement. The hinge edge frame arrangement includes a first edge frame, a second edge frame and a resilient element. The first edge frame is extended along the utility edge of the case body to retain a utility panel in position, wherein the first edge frame has an elongated holding slot formed between an outer and an inner wall along a utility edge. The second edge frame includes an elongated pivot arm, having an enlarged end portion, pivotally received in and extended along the holding slot of the first edge frame, and a clipping member extended from the pivot arm, wherein the clipping member is adapted to fold between a clipping position and a releasing position for detachably clipping an object by the clipping member.
    Type: Application
    Filed: July 14, 2006
    Publication date: January 17, 2008
    Inventor: Chung Lung Cheng
  • Publication number: 20040253807
    Abstract: An improved barrier layer stack and method for forming the same for preserving an aluminum alloy interconnect resistivity, the method comprising providing a semiconductor process wafer comprising an exposed conductive region; forming a first barrier layer comprising a barrier layer stack over the exposed conductive region comprising one of a TiN or Ti layer in contact with the conductive region; forming at least one additional barrier layer comprising the barrier layer stack to form an alternating sequence of TiN and Ti layers; forming an uppermost barrier layer of TiN comprising the barrier layer stack; forming an overlying aluminum alloy region in contact with the uppermost barrier layer; and, subjecting the semiconductor process wafer to at least one process comprising a temperature of greater than temperatures greater than about 350 ° C.
    Type: Application
    Filed: June 13, 2003
    Publication date: December 16, 2004
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kong-Beng Thei, Chung-Lung Cheng, His-Chien Lin, Li-Don Chen, Tung-Lung Lai, Chi-Lung Lin
  • Patent number: D520237
    Type: Grant
    Filed: December 6, 2004
    Date of Patent: May 9, 2006
    Inventor: Chung Lung Cheng