Patents by Inventor Chung Meng Lek

Chung Meng Lek has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated circuit system with through silicon via and method of manufacture thereof
    Patent number: 8536705
    Abstract: A method of manufacture of an integrated circuit system includes: providing a substrate including an active device; forming a through-silicon-via into the substrate; forming an insulation layer over the through-silicon-via to protect the through-silicon-via; forming a contact to the active device after forming the insulation layer; and removing the insulation layer.
    Type: Grant
    Filed: April 25, 2012
    Date of Patent: September 17, 2013
    Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
    Inventors: Pradeep Ramachandramurthy Yelehanka, Denise Tan, Chung Meng Lek, Thomas Thiam, Jeffrey C. Lam, Liang-Choo Hsia
  • INTEGRATED CIRCUIT SYSTEM WITH THROUGH SILICON VIA AND METHOD OF MANUFACTURE THEREOF
    Publication number: 20120205806
    Abstract: A method of manufacture of an integrated circuit system includes: providing a substrate including an active device; forming a through-silicon-via into the substrate; forming an insulation layer over the through-silicon-via to protect the through-silicon-via; forming a contact to the active device after forming the insulation layer; and removing the insulation layer.
    Type: Application
    Filed: April 25, 2012
    Publication date: August 16, 2012
    Applicant: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
    Inventors: Pradeep Ramachandramurthy YELEHANKA, Denise TAN, Chung Meng LEK, Thomas THIAM, Jeffrey C. LAM, Liang-Choo HSIA
  • Integrated circuit system with through silicon via and method of manufacture thereof
    Patent number: 8236688
    Abstract: A method of manufacture of an integrated circuit system includes: providing a substrate including an active device; forming a through-silicon-via into the substrate; forming an insulation layer over the through-silicon-via to protect the through-silicon-via; forming a contact to the active device after forming the insulation layer; and removing the insulation layer.
    Type: Grant
    Filed: June 13, 2011
    Date of Patent: August 7, 2012
    Assignee: Globalfoundries Singapore Pte. Ltd.
    Inventors: Pradeep Ramachandramurthy Yelehanka, Denise Tan, Chung Meng Lek, Thomas Thiam, Jeffrey C. Lam, Liang-Choo Hsia
  • INTEGRATED CIRCUIT SYSTEM WITH THROUGH SILICON VIA AND METHOD OF MANUFACTURE THEREOF
    Publication number: 20110237072
    Abstract: A method of manufacture of an integrated circuit system includes: providing a substrate including an active device; forming a through-silicon-via into the substrate; forming an insulation layer over the through-silicon-via to protect the through-silicon-via; forming a contact to the active device after forming the insulation layer; and removing the insulation layer.
    Type: Application
    Filed: June 13, 2011
    Publication date: September 29, 2011
    Applicant: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
    Inventors: Pradeep Ramachandramurthy Yelehanka, Denise Tan, Chung Meng Lek, Thomas Thiam, Jeffrey C. Lam, Liang-Choo Hsia
  • Method of manufacture an integrated circuit system with through silicon via
    Patent number: 7960282
    Abstract: A method of manufacture of an integrated circuit system includes: providing a substrate including an active device; forming a through-silicon-via into the substrate; forming an insulation layer over the through-silicon-via to protect the through-silicon-via; forming a contact to the active device after forming the insulation layer; and removing the insulation layer.
    Type: Grant
    Filed: May 21, 2009
    Date of Patent: June 14, 2011
    Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
    Inventors: Pradeep Ramachandramurthy Yelehanka, Denise Tan, Chung Meng Lek, Thomas Thiam, Jeffrey C. Lam, Liang-Choo Hsia
  • INTEGRATED CIRCUIT SYSTEM WITH THROUGH SILICON VIA AND METHOD OF MANUFACTURE THEREOF
    Publication number: 20100297844
    Abstract: A method of manufacture of an integrated circuit system includes: providing a substrate including an active device; forming a through-silicon-via into the substrate; forming an insulation layer over the through-silicon-via to protect the through-silicon-via; forming a contact to the active device after forming the insulation layer; and removing the insulation layer.
    Type: Application
    Filed: May 21, 2009
    Publication date: November 25, 2010
    Applicant: CHARTERED SEMICONDUCTOR MANUFACTURING LTD.
    Inventors: Pradeep Ramachandramurthy Yelehanka, Denise Tan, Chung Meng Lek, Thomas Thiam, Jeffrey C. Lam, Liang-Choo Hsia