Abstract: A field effect transistor includes a substrate having a transistor forming region thereon; an insulating layer on the substrate; a first graphene layer on the insulating layer within the transistor forming region; an etch stop layer on the first graphene layer within the transistor forming region; a first inter-layer dielectric layer on the etch stop layer; a gate trench recessed into the first inter-layer dielectric layer and the etch stop layer within the transistor forming region; a second graphene layer on interior surface of the gate trench; a gate dielectric layer on the second graphene layer and on the first inter-layer dielectric layer; and a gate electrode on the gate dielectric layer within the gate trench.

Abstract: Embodiments of the present disclosure relate to a system, a software application, and methods of digital lithography for semiconductor packaging. The method includes comparing positions of vias and via locations, generating position data based on the comparing the positions of vias and the via locations, providing the position data of the vias to a digital lithography device, updating a redistributed metal layer (RDL) mask pattern according to the position data such that RDL locations correspond to the positions of the vias, and projecting the RDL mask pattern with the digital lithography device.

Abstract: An upper for an article of footwear is configured to be connected to a sole structure and is configured to receive a foot. The upper includes a knitted component having a strobel portion that is configured to be disposed underneath the foot. The strobel portion defines an interior surface and an exterior surface of the knitted component. The strobel portion defines a strobel passage between the interior surface and the exterior surface. Also, the upper includes a tensile strand that extends through the strobel passage.

Abstract: Some embodiments relate to a thin film transistor comprising an active layer over a substrate. An insulator is stacked with the active layer. A gate electrode structure is stacked with the insulator and includes a gate material layer having a first work function and a first interfacial layer. The first interfacial layer is directly between the insulator and the gate material layer, wherein the gate electrode structure has a second work function that is different from the first work function.

Abstract: A semiconductor device includes a gate, a semiconductor structure, a gate insulating layer, a first source/drain feature and a second source/drain feature. The gate insulating layer is located between the gate and the semiconductor structure. The semiconductor structure includes at least one first metal oxide layer, a first oxide layer, and at least one second metal oxide layer. The first oxide layer is located between the first metal oxide layer and the second metal oxide layer. The first source/drain feature and the second source/drain feature are electrically connected with the semiconductor structure.

Abstract: An actuating and sensing module is disclosed and includes a bottom plate, a gas pressure sensor, a thin gas transportation device and a cover plate. The bottom plate includes a pressure relief orifice, a discharging orifice and a communication orifice. The gas pressure sensor is disposed on the bottom plate and seals the communication orifice. The thin gas transportation device is disposed on the bottom plate and seals the pressure relief orifice and the discharging orifice. The cover plate is disposed on the bottom plate and covers the gas pressure sensor and the thin gas-transportation device. The cover plate includes an intake orifice. The thin gas transportation device is driven to inhale gas through the intake orifice, the gas is then discharged through the discharging orifice by the thin gas transportation device, and a pressure change of the gas is sensed by the gas pressure sensor.

Abstract: A method for removing a heavy metal from water includes subjecting a microbial solution containing a liquid culture of a urease-producing bacterial strain and a reaction solution containing a manganese compound and urea to a microbial-induced precipitation reaction, so as to obtain biomineralized manganese carbonate (MnCO3) particles, admixing the biomineralized MnCO3 particles with water containing a heavy metal, so that the biomineralized MnCO3 particles adsorb the heavy metal in the water to form a precipitate, and removing the precipitate from the water.

Abstract: Some implementations described herein include systems and techniques for fabricating a wafer-on-wafer product using a filled lateral gap between beveled regions of wafers included in a stacked-wafer assembly and along a perimeter region of the stacked-wafer assembly. The systems and techniques include a deposition tool having an electrode with a protrusion that enhances an electromagnetic field along the perimeter region of the stacked-wafer assembly during a deposition operation performed by the deposition tool. Relative to an electromagnetic field generated by a deposition tool not including the electrode with the protrusion, the enhanced electromagnetic field improves the deposition operation so that a supporting fill material may be sufficiently deposited.

Abstract: In one example in accordance with the present disclosure, an electronic device is described. The electronic device includes a wireless controller. The wireless controller is to establish a first wireless connection between the electronic device and a peripheral device to receive a unique identifier for a second electronic device. The wireless controller is also to establish, based on the unique identifier for the second electronic device, a second wireless connection between the electronic device and the second electronic device. The electronic device includes a wireless transceiver to wirelessly transfer data to the second electronic device through the second wireless connection.

Abstract: A display includes an outer frame, a supporting frame, a display module, and a covering member. The supporting frame is accommodated in the outer frame. The display module is disposed on a supporting member of the supporting frame. The supporting member extends toward a display region of the display module from the supporting frame. On a first surface of the display module, a projection area of the supporting member and a projection area of an first optical film of the display module are partially overlapped with each other. A third surface of the covering member is closely attached to a second optical film of the display module. The covering member has an extension portion. The extension portion extends from a fourth surface opposite to the third surface toward a direction away from the third surface, and the extension portion is coplanar with the outer side surface of the outer frame.

Abstract: Various embodiments of the present application are directed towards a group III-V device including a rough buffer layer. The rough buffer layer overlies a silicon substrate, a buffer structure overlies the rough buffer layer, and a heterojunction structure overlies the buffer structure. The buffer structure causes band bending and formation of a two-dimensional hole gas (2DHG) in the rough buffer layer. The rough buffer layer includes silicon or some other suitable semiconductor material and, in some embodiments, is doped. A top surface of the rough buffer layer and/or a bottom surface of the rough buffer layer is/are rough to promote carrier scattering along the top and bottom surfaces. The carrier scattering reduces carrier mobility and increases resistance at the 2DHG. The increased resistance increases an overall resistance of the silicon substrate, which reduces substrate loses and increases a power added efficiency (PAE).

Abstract: A manufacturing method of a semiconductor device includes at least the following steps. A sacrificial substrate is provided. An epitaxial layer is formed on the sacrificial substrate. An etch stop layer is formed on the epitaxial layer. Carbon atoms are implanted into the etch stop layer. A capping layer and a device layer are formed on the etch stop layer. A handle substrate is bonded to the device layer. The sacrificial substrate, the epitaxial layer, and the etch stop layer having the carbon atoms are removed from the handle substrate.

Abstract: A device includes a semiconductor fin, and a gate stack on sidewalls and a top surface of the semiconductor fin. The gate stack includes a high-k dielectric layer, a work-function layer overlapping a bottom portion of the high-k dielectric layer, and a blocking layer overlapping a second bottom portion of the work-function layer. A low-resistance metal layer overlaps and contacts the work-function layer and the blocking layer. The low-resistance metal layer has a resistivity value lower than second resistivity values of both of the work-function layer and the blocking layer. A gate spacer contacts a sidewall of the gate stack.

Abstract: The present invention develops a vaccine composition against and treatment or prevention on inflammation and lung injury (particularly hyperoxia-induced lung injury) and progression of periodontitis. Tn immunization increases serum anti-Tn antibody titers, while it decreases lavaged protein and cytokines, and also decreases mean linear intercept and lung injury score. Furthermore, the improvement in lung injury is accompanied by a decrease in NF-?B activity.

Abstract: The present invention develops a vaccine composition against and treatment or prevention on inflammation and lung injury (particularly hyperoxia-induced lung injury) and progression of periodontitis. Tn immunization increases serum anti-Tn antibody titers, while it decreases lavaged protein and cytokines, and also decreases mean linear intercept and lung injury score. Furthermore, the improvement in lung injury is accompanied by a decrease in NF-?B activity.

Abstract: This algorithm provides a marker-free approach to establishing the pixel correspondence among the IR images taken at different times, which is the basis for quantitatively characterizing the variation of the heat energy and patterns pixel-wise on a breast surface. The idea is to use the corner points of the heat pattern and the branch points of the skeletons of the heat pattern on the body surface as the initial fiducial points for the longitudinal IR image registration. The Thin-Plate Spline technique is used to model the nonlinear deformation between two IR images taken at two different times. Mutual information between the TPS-transformed image and the target image is employed as the metric quantifying the quality of the longitudinal IR image registration. To optimize the registration, Nelder-Mead simplex method is used to locally modify the pairings of the fiducial points in the source and target IR images to maximize the mutual information.

Abstract: It is developed a Dual-Spectrum Heat Pattern Separation (DS-HPS) algorithm to quantify the energy from the area of the high temperature tissues, called qH map, and decompose the body surface into the high and normal temperature areas based on a pair of middle-wave Infra-red images and long-wave Infra-red images. Further, with longitudinal registration, we can detect the cancerous tissues and assess the chemotherapy treatment response on a pixel by pixel basis according to the change of the qH map derived by the DS-HPS algorithm. The preliminary result shows the area and the qH values in the high temperature area are decreased as the patients receive more chemotherapy. These suggest the proposed algorithm could capture the incremental or decremental of the energies emitted by the cancerous tissues, which has the potentials for chemotherapy assessment and early detection.

Abstract: Infra-red images of tumors carry the information of normal and cancerous tissues in every pixel. We developed a Dual-Spectrum Heat Pattern Separation (DS-HPS) algorithm to quantify the energy from the area of the high temperature tissues, called qH map, and decompose the body surface into the high and normal temperature areas based on a pair of middle-wave Infra-red images and long-wave Infra-red images. Further, with longitudinal registration, we can detect the cancerous tissues and assess the chemotherapy treatment response on a pixel by pixel basis according to the change of the qH map derived by the DS-HPS algorithm. The preliminary result shows the area and the qH values in the high temperature area are decreased as the patients receive more chemotherapy. These suggest the proposed algorithm could capture the incremental or decremental of the energies emitted by the cancerous tissues, which has the potentials for chemotherapy assessment and early detection.

Abstract: A method of thinning a glass substrate includes following steps. A glass substrate is provided. A first etching process is performed on the glass substrate, so as to reduce a thickness of the glass substrate. A polishing process is performed on the thinned glass substrate, so that the thickness of the glass substrate is reduced again. A first treated surface is formed on the glass substrate. The center-line average roughness of the first treated surface ranges from about 100 angstroms (?) to about 300 angstroms (?). A second etching process is performed on the first treated surface of the glass substrate, so as to form a second treated surface. The center-line average roughness of the second treated surface ranges from about 10 angstroms (?) to about 50 angstroms (?).